|
Match
|
Document |
Document Title |
|
|
US20090286383 |
TREATMENT OF WHISKERS
A photo-curing or photosintering process is utilized to modify, reduce or eliminate whiskers or nanowires growing on a material surface. |
|
|
US20140284500 |
SETTLING TIME ACQUISITION METHOD
A settling time acquisition method includes writing at least one reference pattern formed by at least one shot of a charged particle beam, writing an evaluation pattern, which has been formed by... |
|
|
US20080029823 |
Semiconductor Device Having a Dual Stress Liner and Light Exposure Apparatus for Forming the Dual Stress Liner
In a semiconductor device having a dual stress liner for improving electron mobility, the dual stress liner includes a first liner portion formed on a PMOSFET and a second liner portion formed on... |
|
|
US20070023692 |
Seamless stitching of patterns formed by interference lithography
This invention addresses the scalability problem of periodic “nanostructured” surface treatments such as those formed by interference lithography. A novel but simple method is described that... |
|
|
US20050271949 |
Reticle manipulations
Slits and holes within a reticle for a local interconnect layer (LIL) are sized according to factors such as relative isolation and whether they are large or small. This helps overcome side-lobing... |
|
|
US20130295695 |
System and Method for Rejuvenating an Imaging Sensor Degraded by Exposure to Extreme Ultraviolet or Deep Ultraviolet Light
The present invention for imaging sensor rejuvenation may include a rejuvenation illumination system configured to selectably illuminate a portion of an imaging sensor of an imaging system with... |
|
|
US20080299783 |
SYSTEMS AND METHODS FOR PROCESSING SEMICONDUCTOR STRUCTURES USING LASER PULSES LATERALLY DISTRIBUTED IN A SCANNING WINDOW
Systems and methods process structures on or within a semiconductor substrate using a series of laser pulses. In one embodiment, a deflector is configured to selectively deflect the laser pulses... |
|
|
US20100081259 |
DISLOCATION ENGINEERING USING A SCANNED LASER
A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor... |
|
|
US20090026389 |
MULTI-BEAM SOURCE
A multi-beam source for generating a plurality of beamlets of energetic electrically charged particles. The multi-beam source includes an illumination system generating an illuminating beam of... |
|
|
US20090140582 |
PLANAR MOTOR AND STAGE USING THE SAME
A planar motor includes a movable body and a stator configured to drive the movable body in a plane. The stator includes a first stator unit and a second stator unit. The movable body is moved in... |
|
|
US20080044740 |
PHOTOMASK HAVING HAZE REDUCTION LAYER
A photomask is fabricated to have a patterned surface and a transparent layer formed on the patterned surface. |
|
|
US20080175349 |
MASKLESS EUV PROJECTION OPTICS
Various embodiments provide projection optics comprise a plurality of mirrors that provide high demagnification of, for example, about one hundred times or more. The projection optics may be used... |
|
|
US20050250017 |
Mask blank manufacturing method, transfer mask manufacturing method, sputtering target for manufacturing mask blank
To provide a method for manufacturing a mask blank capable of manufacturing a high quality mask blank that suppresses generation of defects in a thin film for forming a mask pattern with high... |
|
|
US20090127473 |
Electron Beam Irradiation Device
An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam... |
|
|
US20080311762 |
Semiconductor device surface roughness reduction
Methods and apparatus relating to surface roughness reduction are described. In one embodiment, a particle beam may be directed onto the surface roughness of a semiconductor device to reduce the... |
|
|
US20120206723 |
DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION COMPRISING A DIFFUSION JUNCTION AND A RESONANT GRATING IN A SINGLE LAYER
A photodiode device including a photosensitive diffusion junction within a single layer. The photodiode device further includes a resonant grating located within the single layer. The... |
|
|
US20080302980 |
Extreme ultra-violet lithographic apparatus and device manufacturing method
An extreme ultra-violet lithographic apparatus for imaging a pattern onto a substrate includes a radiation system constructed and arranged to provide a beam of an extreme ultra-violet radiation,... |
|
|
US20100301233 |
ULTRAVIOLET IRRADIATION DEVICE
Prior to applying of ultraviolet rays to a surface of a wafer with a protective tape joined thereto that is placed and held on a holding table, an illumination sensor moves to a position below an... |
|
|
US20060033043 |
Stacked six degree-of-freedom table
A table with six degrees of freedom, such as a wafer table for a lithography system, has an upper table stacked on top of a lower table. Each of these two stacked tables has three degrees of... |
|
|
US20130320242 |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the... |
|
|
US20080299490 |
WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS
A charged particle beam writing apparatus includes a stage on which a first mask substrate and a second mask substrate are arranged side by side, and a writing unit to write a first pattern on the... |
|
|
US20090321633 |
NANOPILLAR ARRAYS FOR ELECTRON EMISSION
The present invention provides systems, devices, device components and structures for modulating the intensity and/or energies of electrons, including a beam of incident electrons. In some... |
|
|
US20110198509 |
ULTRAVIOLET LIGHT EXPOSURE CHAMBER FOR PHOTOVOLTAIC MODULES
An apparatus for performing UV light exposure testing of solar panels, also known as PV modules, with superior exposure uniformity, equipment throughput, and floor space requirements, consisting... |
|
|
US20100025588 |
DETERMINING DIFFUSION LENGTH OF MINORITY CARRIERS USING LUMINESCENCE
Methods (200, 300), apparatuses and systems (100) for determining minority carrier diffusion lengths in a semi-conductor structure (130), which may be a solar cell or a unprocessed or partially... |
|
|
US20150097126 |
ALIGNMENT SENSOR AND HEIGHT SENSOR
One embodiment relates to a device that senses alignment and height of a work piece. The device may include both an alignment sensor and a height sensor. The alignment sensor generates a first... |
|
|
US20080001103 |
Electron-beam lithography method and apparatus, and program thereof
An electron-beam lithography apparatus, an electron-beam lithography method, and an electron-beam lithography program are provided that prevent any deformation in pattern dimension at a connection... |
|
|
US20080315126 |
Laser light source apparatus, exposure method, and exposure apparatus
Information on the side of the body of an exposure apparatus is effectively used on the side of the laser light source apparatus. There is provided a laser light source apparatus which supplies a... |
|
|
US20060124866 |
Electron beam exposure method and system therefor
A method of leading an electron beam radiated from an electron emitter through openings provided in a stencil mask to a sensitive sample and exposing it includes placing the electron beam under a... |
|
|
US20090267003 |
SEMICONDUCTOR EXPOSURE DEVICE USING EXTREME ULTRA VIOLET RADIATION
The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided... |
|
|
US20070235665 |
Charged particle beam system and method for manufacturing and inspecting LCD devices
A layer on a large area substrate is patterned by providing a large area substrate in the optical path of a plurality of charged particle beams that are emitted from charged particle emitters.... |
|
|
US20080023639 |
Ultraviolet Irradiation Apparatus
A semiconductor wafer is taken as an object to be irradiated, to which a protection sheet S is stuck via an ultraviolet cured adhesive layer, and an ultraviolet irradiation part 12 is disposed... |
|
|
US20090180109 |
DEFECT INSPECTION METHOD AND DEFECT INSPECTION SYSTEM
An object of the invention is to provide a defect inspection method which can prevent the failure in detecting a defect, caused by saturation of a pattern signal obtained by inspecting an... |
|
|
US20090170010 |
High-resolution, patterned-media master mask
A high-resolution, patterned-media master mask is disclosed. The high-resolution, patterned-media master mask includes an electron-absorption substrate for absorbing electrons from an electron... |
|
|
US20090206280 |
CHARGED-BEAM EXPOSURE APPARATUS HAVING AN IMPROVED ALIGNMENT PRECISION AND EXPOSURE METHOD
The first charged-beam optical system, which is one of the charged-beam optical systems, detects first marks provided on the chips formed in the wafer. The positions of the chips made in the wafer... |
|
|
US20090214411 |
METHOD OF SELECTIVELY ELIMINATING METALLIC CARBON NANOTUBES, SEMICONDUCTING CARBON NANOTUBES AND PREPARATION METHOD THEREOF USING THE SAME
Metallic carbon nanotubes (“CNTs”) may be selectively eliminated and semiconducting CNTs may be prepared using light-irradiation. The light provided by the light-irradiation may have a wavelength... |
|
|
US20080299750 |
MULTIPLE MILLISECOND ANNEALS FOR SEMICONDUCTOR DEVICE FABRICATION
A method of forming a doped region includes, in one embodiment, implanting a dopant into a region in a semiconductor substrate, recrystallizing the region by performing a first millisecond anneal,... |
|
|
US20100096566 |
Reducing Line Edge Roughness by Particle Beam Exposure
Reducing line edge roughness by particle beam exposure is generally described. In one example, a method includes forming one or more line structures on a surface of a semiconductor substrate,... |
|
|
US20110117678 |
CARBON CONTAINING LOW-K DIELECTRIC CONSTANT RECOVERY USING UV TREATMENT
A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric and associated apparatus enables process induced damage repair. The methods of the invention are particularly... |
|
|
US20090084985 |
Cadmium sulfide quantum dot lasing in room temperature liquid solution
Disclosed is a lasing complex comprising a room temperature solution containing cadmium sulfide (CdS) quantum dots. Optical gain has been observed in CdS nanocrystal quantum dots in strong... |
|
|
US20130068970 |
UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations
A UV irradiation apparatus for treating substrates includes: at least two process stations each provided with a UV transmissive window; at least one electric UV lamp using two electrodes in a gas... |
|
|
US20090014666 |
OPTICAL SYSTEM HAVING A CLEARNING ARRANGEMENT
A cleaning arrangement for an optical system and in particular for an optical system designed for EUV radiation. The cleaning arrangement has a gas inlet (28) for a reactive gas (29). Contaminants... |
|
|
US20100006777 |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the... |
|
|
US20050035306 |
Focused charged particle beam apparatus
In order to enable perpendicular processing of a slice in all directions about a lens optical axis, a focused charged particle beam of the present invention is provided with a tilt mechanism... |
|
|
US20050254035 |
Multi-photon lithography
A system and method for patterned exposure of a photoactive medium is described wherein a pulsed optical beam with a high peak-power is stretched in the time domain to reduce the peak power while... |
|
|
US20080210887 |
Charged Particle System
A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a... |
|
|
US20080128638 |
Multi-Beam Modulator For a Particle Beam and Use of the Multi-Beam Modulator for the Maskless Structuring of a Substrate
The invention discloses a multibeam modulator which generates a plurality of individual beams from a particle beam. The particle beam illuminates the multibeam modulator at least partially over... |
|
|
US20060228634 |
Beam-induced etching
A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is... |
|
|
US20060071182 |
Method of processing semiconductor apparatus
The present invention relates to a method (apparatus) of processing a semiconductor apparatus, wherein a processing beam is irradiated on a semiconductor apparatus comprising an insulation film... |
|
|
US20100022102 |
LASER ANNEALING METHOD AND DEVICE
A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a... |
|
|
US20080017810 |
Correction of spatial instability of an EUV source by laser beam steering
A method to align a discharge axis of a discharge radiation source with respect to optics of the lithographic apparatus includes creating a discharge in a substance in a discharge space between an... |