Matches 1 - 50 out of 78 1 2 >


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US20090148652 Diamond Film Deposition and Probes  
Diamond SPM and AFM probes which are durable, particularly for scanning hard surfaces such as diamond surfaces. Interlayers and seeding can be used to improve diamond deposition, and the diamond...
US20150013481 MICRO-SCALE PENDULUM  
A micro-scale pendulum structure. The structure includes a membrane having a peripheral support portion and an inner portion, and a micro-scale pendulum carried by the inner portion of the membrane.
US20140034607 IMPLANTABLE INTRAOCULAR PRESSURE DRAIN  
An implanted parylene tube shunt relieves intra-ocular pressure. The device is implanted with an open end in the anterior chamber of the eye, allowing excess fluid to be drained through the tube...
US20120091100 ETCHANT FOR CONTROLLED ETCHING OF GE AND GE-RICH SILICON GERMANIUM ALLOYS  
The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture...
US20130092657 CROSS-LINKING AND MULTI-PHASE ETCH PASTES FOR HIGH RESOLUTION FEATURE PATTERNING  
The present invention relates to a novel etching media in the form of printable, homogeneous etching pastes with non-Newtonian flow properties for the improved etching of inorganic oxides and...
US20130199539 Nanostructured Surfaces  
The present invention is directed to methods for inhibiting growth of bacteria and to nanometer scale surfaces having antibacterial properties.
US20140001156 Method for Etching a Ceramic Phosphor Converter  
A method is described for etching ceramic phosphor converters. The method includes contacting a surface of the converter with a solution of phosphor acid for a time sufficient to etch the...
US20150048053 SELECTIVE ETCHING METHOD  
A layer of a metal selected from titanium, niobium, tungsten, molybdenum, ruthenium, rhodium, arsenic, aluminum and gallium, an oxide of the metal, a nitride of the metal, silicon nitride, hafnium...
US20050196671 Ionic liquids of heterocyclic amines  
Ionic liquids having melting points below about 100 C formed by reaction of a heterocyclic amine with about 2.8 and about 3.2 moles of anhydrous hydrogen fluoride per mole of amine nitrogen....
US20080121621 Printable Medium for the Etching of Silicon Dioxide and Silicon Nitride Layers  
The present invention relates to a novel printable etching medium having non-Newtonian flow behaviour for the etching of surfaces in the production of solar cells and to the use thereof. In...
US20140356623 THIOETHER-BRIDGED ORGANIC/INORGANIC COMPOSITE AND METHOD FOR PREPARING HOLLOW OR POROUS CARBON STRUCTURES AND SILICA STRUCTURES USING THE SAME  
Provided are organosilica composites based on bis(3-triethoxysilylpropyl)tetrasulfide (TESPTS) or bis(3-triethoxysilylpropyl)disulfide (TESPDS) and containing octadecyltrimethoxy silane (C18TMS)...
US20110269019 A METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES  
A process for etching silicon to form silicon pillars on the etched surfaces, includes treating silicon with an etching solution that includes 5 to 10M HF 0.01 to 0.1M Ag+ ions and 0.02 to 0.2M...
US20100044344 Silicon Nanoparticle Formation From Silicon Powder and Hexacholorplatinic Acid  
A silicon nanoparticle formation method that can rapidly produce substantial quantities of silicon nanoparticles, which are readily recoverable for subsequent uses. Methods of the invention treat...
US20080029487 Fine Treatment Agent and Fine Treatment Method Using Same  
A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at...
US20100224593 Acid Corrosion Solution for Preparing Polysilicon Suede and the Applied Method of It  
An acid corrosion solution for preparing polysilicon suede is obtained by mixing with an oxidant and a hydrogen fluoride. The oxidant is a nitrate or nitrite. The method applied of the solution...
US20140284309 Metal Oxide Activated Cement  
A cement including: an alkali silicate; an organic silicate; a compound selected from a group consisting of Pozzolanic compounds and synthetic Pozzolanic substitutes; a metal oxide; an activator.
US20080116170 SELECTIVE METAL WET ETCH COMPOSITION AND PROCESS  
Composition and a process using the composition for selectively wet etching metal including depositing metal on a silicon surface; applying energy to cause respective portions of the metal and...
US20050274396 Methods for wet cleaning quartz surfaces of components for plasma processing chambers  
Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include...
US20120027956 MODIFICATION OF NITRIDE TOP LAYER  
A method of forming a nitride film is disclosed. In one embodiment, the method comprises performing an ending film deposition process that differs from the main film deposition process in terms of...
US20140020556 MASS SEPARATION VIA A TURBOMOLECULAR PUMP  
A mass separation method utilizing a turbomolecular pump includes providing a gas, having analytes and ambient molecules, to an inlet chamber for allowing flow of gas into the pump, pulling gas...
US20080210900 Selective Wet Etchings Of Oxides  
The present invention relates to a wet etching composition including a sulfonic acid, a phosphonic acid, a phosphinic acid or a mixture of any two or more thereof, and a fluoride, and to a process...
US20060011586 Method of etching nitrides  
Etching chemistries for etching nitride materials selective to oxide materials and selective to resist patterning materials are disclosed along with methods of etching nitride materials, such as...
US20080203060 ETCHING METHOD AND ETCHING COMPOSITION USEFUL FOR THE METHOD  
In etching of silicon nitride with a phosphorus type, if etching is carried for a long time, silicon oxide tends to precipitate, and it has been impossible to constantly carry out the etching for...
US20130122717 METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES  
A method for treating silicon to form pillars, especially for use as the active anode material in Li-ion batteries, is disclosed. The process is simple to operate on a commercial scale since it...
US20090215156 Method for Fabricating Nanogap and Nanogap Sensor  
The present invention relates to a method of fabricating a nanogap and a nanogap sensor, and to a nanogap and a nanogap sensor fabricated using the method. The present invention relates to a...
US20100282165 PRODUCTION OF ADJUSTMENT STRUCTURES FOR A STRUCTURED LAYER DEPOSITION ON A MICROSYSTEM TECHNOLOGY WAFER  
The invention relates to a method for selective material deposition for sensitive structures in micro systems technology for producing mechanical adjustment structures (6, 5) for a vapour...
US20080064223 ETCHING LIQUID, ETCHING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC COMPONENT  
An etching liquid used for selectively etching silicon nitride, the etching liquid includes: water; a first liquid that can be mixed with the water to produce a mixture liquid having a boiling...
US20100214880 REINFORCED MICRO-MECHANICAL PART  
The micro-mechanical part, for example a horological movement part, includes a silicon core (1) all or part of the surface (3) of which is coated with a thick amorphous material (2). This material...
US20080283503 Method of Processing Nature Pattern on Expitaxial Substrate  
A method of processing nature pattern on expitaxial substrate, unlike the conventional method of processing regular pattern on expitaxial substrate (such as sapphire substrate) by lithography, wet...
US20090166324 FULL-WAFER BACKSIDE MARKING PROCESS  
Embodiments of silicon semiconductor wafers and die having surface marks are described herein. A laser, or other marking tool, may be used to mark, substantially all of a surface of an IC wafer...
US20070138126 Methods of forming a conductive structure  
Example embodiments relate to a method of forming a conductive structure. Other example embodiments relate to a method of forming a conductive structure capable of storing or transmitting electric...
US20090236317 ANTI-REFLECTION ETCHING OF SILICON SURFACES CATALYZED WITH IONIC METAL SOLUTIONS  
A method (300) for etching a silicon surface (116). The method (300) includes positioning (310) a substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (330,...
US20100256408 Method for Preparing Size-Controlled Silicon Carbide Nancrystals  
The present disclosure relates to a method of preparing silicon carbon nanocrystals (SiC-NCs) in a size-dependent manner by reacting a compound of the Formula I: R1Si(X1)3, with a compound of the...
US20140021169 POLYIMIDE-CONTAINING LAYER AND METHOD FOR ETCHING POLYIMIDE-CONTAINING LAYER  
The disclosure provides a polyimide-containing layer suitable for being etched by an alkaline solution and a method for etching a polyimide-containing layer. The polyimide-containing layer...
US20100196780 PROTECTING A PEM FUEL CELL CATALYST AGAINST CARBON MONOXIDE POISONING  
An anode structure comprises an array of carbon nanotubes having a diffusion side and a membrane side, and catalyst particles interspersed on inner surfaces of the membrane side of the carbon...
US20080069756 Preferential Etching Method and Silicon Single Crystal Substrate  
There is provided a preferential etching method wherein a preferential etchant which contains at least a hydrofluoric acid whose composition by volume falls within the range of 0.02 to 0.1, a...
US20070228010 Systems and methods for removing/containing wafer edge defects post liner deposition  
A method removes and/or contains edge residue. A wafer comprised of a semiconductor material having a top surface, a bottom surface and an edge surface is provided. The bottom surface and the top...
US20090272720 METHOD AND HEATING DEVICE FOR FORMING LARGE GRAIN SIZE SILICON MATERIAL STRUCTURE FOR PHOTOVOLTAIC DEVICES  
A method for forming polysilicon material for photovoltaic cells. A first silicon material characterized by a first purity level is provided. The first silicon material is subjected to a thermal...
US20100084628 BRANCHED NANOWIRE AND METHOD FOR FABRICATION OF THE SAME  
Disclosed herein are a branched nanowire having parasitic nanowires grown at a surface of the branched nanowire, and a method for fabricating the same. The branched nanowire may be fabricated in a...
US20150045885 SEEDLESS GROUP IV NANOWIRES, AND METHODS FOR THE PRODUCTION THEREOF  
A water dispersible, biocompatible, non-toxic, seedless Group IV nanowire having an etched surface and surface oxide is provided. Also provided is a method of forming water dispersible seedless...
US20130165365 TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID  
There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide...
US20080237190 SURFACE CLEANING METHOD OF SEMICONDUCTOR WAFER HEAT TREATMENT BOAT  
A surface cleaning method of a semiconductor wafer heat treatment boat that can prevent metallic contamination to semiconductor wafers and keep down a production time and manufacturing costs of...
US20060043072 Method for planarizing polysilicon  
A method for planarizing polysilicon comprises providing a substrate, forming a dielectric layer on the substrate, forming an amorphous silicon film on the dielectric layer, etching the amorphous...
US20100129610 PRISMATIC SILICON AND METHOD OF PRODUCING SAME  
Silicon in prismatic shape is produced by using a silicon wafer with (110) surface and sequentially carrying out an alignment configuration forming step for forming alignment configurations having...
US20130341304 RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN-FORMING METHOD AND RESIST UNDERLAYER FILM  
A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180° C. The resist underlayer film-forming composition is used for a multilayer...
US20090084440 SEMICONDUCTOR PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME  
A semiconductor photovoltaic device comprises a semiconductor substrate having a first surface and a second surface, the first surface and the second surface being opposed to each other, a...
US20120187088 LIQUID PROCESSING METHOD, LIQUID PROCESSING APPARATUS AND STORAGE MEDIUM  
There are provided a liquid processing method and a liquid processing apparatus capable of providing a high etching rate and a high etching selectivity for silicon nitride against silicon oxide,...
US20150021293 METHOD FOR PROVIDING A NANOPATTERN OF METAL OXIDE NANOSTRUCTURES ON A SUBSTRATE  
A method for providing a nanopattern of periodically ordered metal oxide nanostructures on a substrate is described. The method comprises the steps of providing a microphase separated block...
US20080121622 COMPOSITION FOR ETCHING SILICON OXIDE AND METHOD OF FORMING A CONTACT HOLE USING THE SAME  
In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium...
US20100108642 METHOD FOR REMOVING FINE-GRAIN SILICON MATERIAL FROM GROUND SILICON MATERIAL AND APPARATUS FOR CARRYING OUT THE METHOD  
A method and an apparatus for removing fine-grain silicon material from coarse-grain ground silicon material are disclosed. In the method, ground silicon material is selected that exhibits a...

Matches 1 - 50 out of 78 1 2 >