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US20150102012 MIXED ABRASIVE POLISHING COMPOSITIONS  
The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing...
US20100308016 Polishing composition for nickel-phosphorous memory disks  
The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, a complexing agent, and...
US20080203059 DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT  
The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The...
US20050176251 Polishing pad with releasable slick particles  
The present invention provides a polishing pad useful for polishing a semiconductor substrate, the polishing pad comprising: a polishing layer having a polishing surface, the polishing layer...
US20060131275 Selective slurry for chemical mechanical polishing  
An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component...
US20070284338 Chemical mechanical polishing method  
A chemical mechanical polishing method includes bringing a body to be polished into contact with a polishing pad mounted on a rotating polishing table while feeding a polishing slurry to the...
US20080000878 Method of texturing  
A method of texturing a surface of a magnetic hard disk substrate includes the steps of rotating the magnetic hard disk substrate, supplying polishing slurry on the surface of the substrate, and...
US20070228012 METHOD FOR MAKING A SATIN FINISH SURFACE  
The invention concerns a method of making a satin finish surface on a part made of a material with a Vickers hardness greater than 1000 HV including at least one polished surface, mainly including...
US20060138087 Copper containing abrasive particles to modify reactivity and performance of copper CMP slurries  
A slurry for use in a chemical mechanical polishing process for planarizing copper-based metal structures on a substrate comprises an oxidizer, an organic complexing agent, surfactants, and a...
US20140001155 MANUFACTURING METHOD OF MAGNETIC DISK SUBSTRATE  
A magnetic disk substrate production method by which the embedded alumina and the waviness of the substrate surface can be reduced is provided. The magnetic disk substrate production method...
US20080197112 CHEMICAL ASSISTED LAPPING AND POLISHING OF METALS  
Compositions for lapping gears and methods for preparing the same are described. These compositions contain a salt of polyaspartic acid and may contain additional components that are useful for...
US20070218692 Copper-based metal polishing compositions and polishing processes  
A copper-based metal polishing composition includes abrasive particles, a borate, an oxidizing agent, and water. A process for polishing a semiconductor substrate includes positioning the...
US20070215280 Semiconductor surface processing  
A semiconductor surface processing method in one example comprises disposing a polishing pad in rotating engagement with a semiconductor wafer to be polished, dripping a first polishing solution...
US20090090696 SLURRIES FOR POLISHING OXIDE AND NITRIDE WITH HIGH REMOVAL RATES  
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, and zirconia, (b) a cationic copolymer...
US20060289387 NON-AQUEOUS LAPPING COMPOSITION AND METHOD USING SAME  
Lapping compositions which do not comprise water are disclosed, wherein those lapping compositions comprise a non-aqueous fluid, and wherein the lapping compositions are useful during a process to...
US20060175295 Abrasive partilcle for chemical mechanical polishing  
An abrasive composition for polishing substrates including a plurality of abrasive particles having a polydisperse particle size distribution with median particle size, by volume, being about 20...
US20070075040 Composition and method for planarizing surfaces  
The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina...
US20080105652 CMP of copper/ruthenium/tantalum substrates  
The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic...
US20070289947 Method for polishing lithium aluminum oxide crystal  
The present invention polishes a lithium aluminum oxide (LiAlo2) crystal several times with three different materials and then the LiAlo2 crystal are soaked into an acid solution to be washed for...
US20060124592 Chemical mechanical polish slurry  
Relatively large oxide particles formed during the CMP process can scratch a conductive material being polished. An interference agent is added the polishing slurry, which results in significant...
US20070293049 Slurry for CMP of Cu film, polishing method and method for manufacturing semiconductor device  
A slurry for CMP of Cu film is provided, which includes water, peroxosulfuric acid or a salt thereof, basic amino acid, a complexing agent which forms a water-insoluble metal complex, a...
US20050205837 Polishing composition and polishing method  
A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated...
US20050279733 CMP composition for improved oxide removal rate  
The invention provides a chemical-mechanical polishing composition that comprises an abrasive, a halide salt, and water. The invention further provides a method for the chemical-mechanical...
US20070176140 Polishing composition and polishing method  
A first polishing composition is used in chemical mechanical polishing for removing one part of the portion of a conductive layer positioned outside a trench. A second polishing composition is...
US20140263184 CMP COMPOSITIONS WITH LOW SOLIDS CONTENT AND METHODS RELATED THERETO  
Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains...
US20060243702 CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device  
A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not...
US20070075291 CMP Slurry, Preparation Method Thereof and Method of Polishing Substrate Using the Same  
A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising...
US20080156774 CMP method for gold-containing substrates  
The invention provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with a cyanide-free chemical-mechanical polishing (CMP) composition.
US20070145012 Slurry and method for chemical-mechanical polishing  
Disclosed is a slurry and method for chemical-mechanical polishing operation. The slurry may contain abrasive particles, an oxidizer, a pH controller, a chelating agent and water. The viscosity of...
US20080135520 Chemical composition for chemical mechanical planarization  
The chemical composition for a slurry for chemical mechanical planarization includes abrasive particles selected from the group consisting of SiO2, Al2O3, TiO2, and CeO2, and combinations thereof,...
US20060124593 Colloidal silica based chemical mechanical polishing slurry  
A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing...
US20070202702 Chemical mechanical polishing process  
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a...
US20070298612 Compositions and methods for polishing silicon nitride materials  
The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition,...
US20070264829 SLURRY AND METHOD FOR CHEMICAL MECHANICAL POLISHING  
A chemical mechanical polishing slurry, contains an abrasive dispersed in deionized water and an organic viscosity modifier added to adjust the viscosity of the slurry to within a range of 0.5 to...
US20060163206 Novel polishing slurries and abrasive-free solutions having a multifunctional activator  
The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the...
US20070181535 COMPOSITIONS AND METHODS FOR CMP OF SEMICONDUCTOR MATERIALS  
The invention provides a composition for chemical-mechanical polishing, The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier...
US20070145013 Method for polishing workpiece, polishing apparatus and method for manufacturing semiconductor device  
A region being free of groove is provided in a central portion of the polishing pad, and a region having grooves formed thereon is provided the outer portion thereof. A retainer ring surrounds and...
US20050194562 Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers  
A polishing composition suitable for polishing semiconductor substrates comprises 0.001 to 2 wt % of a thermoplastic polymer; and 0.001 to 1 wt % of polyvinylpyrrolidone; wherein varying the...
US20060065635 Deposition chamber surface enhancement and resulting deposition chambers  
Methods for passivating exposed surfaces within an apparatus for depositing thin films on a substrate are disclosed. Interior surfaces of a deposition chamber and conduits in communication...
US20090173717 COMPOSITION AND METHOD FOR POLISHING NICKEL-PHOSPHOROUS-COATED ALUMINUM HARD DISKS  
The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the...
US20070007246 Manufacture of semiconductor device with CMP  
A manufacture method for a semiconductor device, includes the steps of: in CMP for forming STI, (a) polishing the surface of a film formed on a semiconductor substrate until the surface of the...
US20070221624 ELECTRON EMISSION DEVICE, METHOD OF MANUFACTURING THE ELECTRON EMISSION DEVICE, AND ELECTRON EMISSION DISPLAY USING THE ELECTRON EMISSION DEVICE  
An electron emission device including a first electrode, an electron emission region formed on the first electrode, and a second electrode disposed on the first electrode with an insulating layer...
US20060027533 System for dynamic slurry delivery in a CMP process  
The present invention provides a system (100) for dynamic slurry delivery during a semiconductor polishing process. A dispensing component (118) is adapted to dispense a slurry material (116) onto...
US20060249482 Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same  
A CMP composition and process for planarization of a semiconductor wafer surface having a copper barrier layer portion, said composition comprising an oxidizing agent, a boric acid component, and...
US20070228011 Novel chemical composition to reduce defects  
A chemical composition and methods to remove defects while maintaining corrosion protection of conductors on a substrate are described. The composition includes a conductive solution, a corrosion...
US20060037942 Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry  
A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at...
US20060196849 Composition and method for polishing a sapphire surface  
An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a...
US20050211952 Compositions and methods for chemical mechanical planarization of tungsten and titanium  
The present invention provides an acidic aqueous composition useful for polishing tungsten and titanium on a semiconductor wafer comprising by weight percent 0.5 to 10 abrasive, 0.5 to 9 oxidizer,...
US20080101206 Device for Recording Data Comprising Mirodots With Free Ends Forming a Convex Surface and Method for the Production Thereof  
Device for recording data comprising microdots with free ends forming a convex surface and method for the production thereof The data recording device comprises a storage medium arranged facing a...
US20060032836 METHODS OF CONTROLLING THE PROPERTIES OF ABRASIVE PARTICLES FOR USE IN CHEMICAL-MECHANICAL POLISHING SLURRIES  
The present invention provides methods of controlling the properties of abrasive particles produced via hydrothermal synthesis for use in chemical-mechanical polishing slurries. In accordance with...

Matches 1 - 50 out of 74 1 2 >