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US20150102012 |
MIXED ABRASIVE POLISHING COMPOSITIONS
The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing... |
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US20100308016 |
Polishing composition for nickel-phosphorous memory disks
The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, a complexing agent, and... |
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US20080203059 |
DILUTABLE CMP COMPOSITION CONTAINING A SURFACTANT
The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The... |
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US20050176251 |
Polishing pad with releasable slick particles
The present invention provides a polishing pad useful for polishing a semiconductor substrate, the polishing pad comprising: a polishing layer having a polishing surface, the polishing layer... |
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US20060131275 |
Selective slurry for chemical mechanical polishing
An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component... |
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US20070284338 |
Chemical mechanical polishing method
A chemical mechanical polishing method includes bringing a body to be polished into contact with a polishing pad mounted on a rotating polishing table while feeding a polishing slurry to the... |
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US20080000878 |
Method of texturing
A method of texturing a surface of a magnetic hard disk substrate includes the steps of rotating the magnetic hard disk substrate, supplying polishing slurry on the surface of the substrate, and... |
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US20070228012 |
METHOD FOR MAKING A SATIN FINISH SURFACE
The invention concerns a method of making a satin finish surface on a part made of a material with a Vickers hardness greater than 1000 HV including at least one polished surface, mainly including... |
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US20060138087 |
Copper containing abrasive particles to modify reactivity and performance of copper CMP slurries
A slurry for use in a chemical mechanical polishing process for planarizing copper-based metal structures on a substrate comprises an oxidizer, an organic complexing agent, surfactants, and a... |
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US20140001155 |
MANUFACTURING METHOD OF MAGNETIC DISK SUBSTRATE
A magnetic disk substrate production method by which the embedded alumina and the waviness of the substrate surface can be reduced is provided. The magnetic disk substrate production method... |
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US20080197112 |
CHEMICAL ASSISTED LAPPING AND POLISHING OF METALS
Compositions for lapping gears and methods for preparing the same are described. These compositions contain a salt of polyaspartic acid and may contain additional components that are useful for... |
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US20070218692 |
Copper-based metal polishing compositions and polishing processes
A copper-based metal polishing composition includes abrasive particles, a borate, an oxidizing agent, and water. A process for polishing a semiconductor substrate includes positioning the... |
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US20070215280 |
Semiconductor surface processing
A semiconductor surface processing method in one example comprises disposing a polishing pad in rotating engagement with a semiconductor wafer to be polished, dripping a first polishing solution... |
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US20090090696 |
SLURRIES FOR POLISHING OXIDE AND NITRIDE WITH HIGH REMOVAL RATES
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, and zirconia, (b) a cationic copolymer... |
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US20060289387 |
NON-AQUEOUS LAPPING COMPOSITION AND METHOD USING SAME
Lapping compositions which do not comprise water are disclosed, wherein those lapping compositions comprise a non-aqueous fluid, and wherein the lapping compositions are useful during a process to... |
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US20060175295 |
Abrasive partilcle for chemical mechanical polishing
An abrasive composition for polishing substrates including a plurality of abrasive particles having a polydisperse particle size distribution with median particle size, by volume, being about 20... |
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US20070075040 |
Composition and method for planarizing surfaces
The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina... |
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US20080105652 |
CMP of copper/ruthenium/tantalum substrates
The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic... |
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US20070289947 |
Method for polishing lithium aluminum oxide crystal
The present invention polishes a lithium aluminum oxide (LiAlo2) crystal several times with three different materials and then the LiAlo2 crystal are soaked into an acid solution to be washed for... |
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US20060124592 |
Chemical mechanical polish slurry
Relatively large oxide particles formed during the CMP process can scratch a conductive material being polished. An interference agent is added the polishing slurry, which results in significant... |
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US20070293049 |
Slurry for CMP of Cu film, polishing method and method for manufacturing semiconductor device
A slurry for CMP of Cu film is provided, which includes water, peroxosulfuric acid or a salt thereof, basic amino acid, a complexing agent which forms a water-insoluble metal complex, a... |
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US20050205837 |
Polishing composition and polishing method
A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated... |
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US20050279733 |
CMP composition for improved oxide removal rate
The invention provides a chemical-mechanical polishing composition that comprises an abrasive, a halide salt, and water. The invention further provides a method for the chemical-mechanical... |
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US20070176140 |
Polishing composition and polishing method
A first polishing composition is used in chemical mechanical polishing for removing one part of the portion of a conductive layer positioned outside a trench. A second polishing composition is... |
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US20140263184 |
CMP COMPOSITIONS WITH LOW SOLIDS CONTENT AND METHODS RELATED THERETO
Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains... |
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US20060243702 |
CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device
A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not... |
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US20070075291 |
CMP Slurry, Preparation Method Thereof and Method of Polishing Substrate Using the Same
A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising... |
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US20080156774 |
CMP method for gold-containing substrates
The invention provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with a cyanide-free chemical-mechanical polishing (CMP) composition. |
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US20070145012 |
Slurry and method for chemical-mechanical polishing
Disclosed is a slurry and method for chemical-mechanical polishing operation. The slurry may contain abrasive particles, an oxidizer, a pH controller, a chelating agent and water. The viscosity of... |
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US20080135520 |
Chemical composition for chemical mechanical planarization
The chemical composition for a slurry for chemical mechanical planarization includes abrasive particles selected from the group consisting of SiO2, Al2O3, TiO2, and CeO2, and combinations thereof,... |
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US20060124593 |
Colloidal silica based chemical mechanical polishing slurry
A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing... |
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US20070202702 |
Chemical mechanical polishing process
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a... |
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US20070298612 |
Compositions and methods for polishing silicon nitride materials
The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition,... |
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US20070264829 |
SLURRY AND METHOD FOR CHEMICAL MECHANICAL POLISHING
A chemical mechanical polishing slurry, contains an abrasive dispersed in deionized water and an organic viscosity modifier added to adjust the viscosity of the slurry to within a range of 0.5 to... |
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US20060163206 |
Novel polishing slurries and abrasive-free solutions having a multifunctional activator
The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the... |
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US20070181535 |
COMPOSITIONS AND METHODS FOR CMP OF SEMICONDUCTOR MATERIALS
The invention provides a composition for chemical-mechanical polishing, The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier... |
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US20070145013 |
Method for polishing workpiece, polishing apparatus and method for manufacturing semiconductor device
A region being free of groove is provided in a central portion of the polishing pad, and a region having grooves formed thereon is provided the outer portion thereof. A retainer ring surrounds and... |
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US20050194562 |
Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers
A polishing composition suitable for polishing semiconductor substrates comprises 0.001 to 2 wt % of a thermoplastic polymer; and 0.001 to 1 wt % of polyvinylpyrrolidone; wherein varying the... |
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US20060065635 |
Deposition chamber surface enhancement and resulting deposition chambers
Methods for passivating exposed surfaces within an apparatus for depositing thin films on a substrate are disclosed. Interior surfaces of a deposition chamber and conduits in communication... |
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US20090173717 |
COMPOSITION AND METHOD FOR POLISHING NICKEL-PHOSPHOROUS-COATED ALUMINUM HARD DISKS
The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the... |
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US20070007246 |
Manufacture of semiconductor device with CMP
A manufacture method for a semiconductor device, includes the steps of: in CMP for forming STI, (a) polishing the surface of a film formed on a semiconductor substrate until the surface of the... |
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US20070221624 |
ELECTRON EMISSION DEVICE, METHOD OF MANUFACTURING THE ELECTRON EMISSION DEVICE, AND ELECTRON EMISSION DISPLAY USING THE ELECTRON EMISSION DEVICE
An electron emission device including a first electrode, an electron emission region formed on the first electrode, and a second electrode disposed on the first electrode with an insulating layer... |
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US20060027533 |
System for dynamic slurry delivery in a CMP process
The present invention provides a system (100) for dynamic slurry delivery during a semiconductor polishing process. A dispensing component (118) is adapted to dispense a slurry material (116) onto... |
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US20060249482 |
Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same
A CMP composition and process for planarization of a semiconductor wafer surface having a copper barrier layer portion, said composition comprising an oxidizing agent, a boric acid component, and... |
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US20070228011 |
Novel chemical composition to reduce defects
A chemical composition and methods to remove defects while maintaining corrosion protection of conductors on a substrate are described. The composition includes a conductive solution, a corrosion... |
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US20060037942 |
Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry
A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at... |
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US20060196849 |
Composition and method for polishing a sapphire surface
An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a... |
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US20050211952 |
Compositions and methods for chemical mechanical planarization of tungsten and titanium
The present invention provides an acidic aqueous composition useful for polishing tungsten and titanium on a semiconductor wafer comprising by weight percent 0.5 to 10 abrasive, 0.5 to 9 oxidizer,... |
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US20080101206 |
Device for Recording Data Comprising Mirodots With Free Ends Forming a Convex Surface and Method for the Production Thereof
Device for recording data comprising microdots with free ends forming a convex surface and method for the production thereof The data recording device comprises a storage medium arranged facing a... |
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US20060032836 |
METHODS OF CONTROLLING THE PROPERTIES OF ABRASIVE PARTICLES FOR USE IN CHEMICAL-MECHANICAL POLISHING SLURRIES
The present invention provides methods of controlling the properties of abrasive particles produced via hydrothermal synthesis for use in chemical-mechanical polishing slurries. In accordance with... |