Matches 1 - 50 out of 115 1 2 3 >


Match Document Document Title
US20060196849 Composition and method for polishing a sapphire surface  
An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a...
US20050269295 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate  
A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the...
US20070181852 PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION  
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful...
US20060118524 CERIUM OXIDE ABRASIVE AND METHOD OF POLISHING SUBSTRATES  
A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm...
US20050205837 Polishing composition and polishing method  
A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated...
US20050263490 Method of passivating chemical mechanical polishing compositions for copper film planarization processes  
A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control...
US20140329111 METHODS OF MAINTAINING AND USING A HIGH CONCENTRATION OF DISSOLVED COPPER ON THE SURFACE OF A USEFUL ARTICLE  
A method for maintaining and using a high concentration of dissolved copper on a surface of a useful article by providing a copper surface without coatings thereon which increase the wetting angle...
US20050211950 Chemical-mechanical polishing composition and method for using the same  
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of at least one metal selected from...
US20060175298 Method and composition for polishing a substrate  
Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a...
US20060049143 Polishing composition and polishing method using the same  
A polishing composition includes an abrasive, at least one compound of azoles and derivatives thereof, and water. The polishing composition is used in applications for polishing surfaces of...
US20050199588 Fixed-abrasive chemical-mechanical planarization of titanium nitride  
Planarizing solutions, and their methods of use, for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an...
US20050173377 Semiconductor wafer, apparatus and process for producing the semiconductor wafer  
The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides,...
US20060250559 Glass product for use in ultra-thin glass display applications  
The present invention is directed to a substrate product for use in the manufacture of active matrix liquid crystal display panels. The product includes a display substrate suitable for use as a...
US20060163206 Novel polishing slurries and abrasive-free solutions having a multifunctional activator  
The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the...
US20060144824 Method of polishing a silicon-containing dielectric  
The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a...
US20050199589 Copper-based metal polishing solution and method for manufacturing semiconductor device  
Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing...
US20080149884 Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing  
A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon...
US20070181534 Barrier polishing liquid and chemical mechanical polishing method  
A barrier polishing liquid is provided that includes (a) a nonionic surfactant represented by Formula (I) below, (b) at least one type of organic acid selected from the group consisting of an...
US20070068902 Polishing composition and polishing method  
A polishing composition contains abrasive grain such as colloidal silica, acid such as citric acid and orthophosphoric acid, an oxidizing agent such as hydrogen peroxide, a compound selected from...
US20050194563 Bicine/tricine containing composition and method for chemical-mechanical planarization  
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The...
US20070155178 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same  
A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry...
US20060124593 Colloidal silica based chemical mechanical polishing slurry  
A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing...
US20060108325 Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers  
A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an...
US20050202677 Method for dishing reduction and feature passivation in polishing processes  
Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a...
US20070045234 Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride  
The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02...
US20060191870 EXTENDED KALMAN FILTER INCORPORATING OFFLINE METROLOGY  
An algorithm uses offline metrology to control a process by passing information from an outer control loop to an inner control loop, extended Kalman filter estimator. The inner control loop...
US20060175295 Abrasive partilcle for chemical mechanical polishing  
An abrasive composition for polishing substrates including a plurality of abrasive particles having a polydisperse particle size distribution with median particle size, by volume, being about 20...
US20060201914 Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion  
A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing...
US20050189322 Compositions and methods for chemical mechanical polishing silica and silicon nitride  
The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 zwitterionic compound, 0.01 to...
US20070184658 Etching Liquid for Controlling Silicon Wafer Surface Shape  
A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a...
US20060144825 Dual reduced agents for barrier removal in chemical mechanical polishing  
Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing...
US20060021972 Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride  
The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02...
US20060000808 Polishing solution of metal and chemical mechanical polishing method  
A polishing solution for metal comprises a specific compound represented and an oxidizing agent. A chemical mechanical polishing method for a semiconductor substrate, comprises: supplying a...
US20050247673 Confinement of fluids on surfaces  
The invention is directed to a device for applying a fluid to a surface, the device comprising a first conduit for directing a flow of a first fluid towards the surface and a second conduit for...
US20050279733 CMP composition for improved oxide removal rate  
The invention provides a chemical-mechanical polishing composition that comprises an abrasive, a halide salt, and water. The invention further provides a method for the chemical-mechanical...
US20070007248 Compositions and methods for chemical mechanical polishing silica and silicon nitride  
The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 zwitterionic compound, 0.01 to...
US20060276041 Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion  
A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and...
US20060021974 Method and composition for polishing a substrate  
Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material...
US20050284844 Cleaning composition for semiconductor components and process for manufacturing semiconductor device  
A cleaning composition for semiconductor components comprises a water-soluble polymer (a) having a specific molecular weight and a compound (b) represented by the following formula (1): NR4OH (1)...
US20060113283 Polishing composition for a semiconductor substrate  
A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous...
US20060249482 Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same  
A CMP composition and process for planarization of a semiconductor wafer surface having a copper barrier layer portion, said composition comprising an oxidizing agent, a boric acid component, and...
US20050230354 Method and composition of post-CMP wetting of thin films  
A method and composition for post-CMP wetting of a wafer having a dielectric thin film is provided. The composition is applied to a wafer after it has been exposed to a CMP slurry.
US20080283502 Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates  
A method and system is provided for improved polishing or planarizing of aluminum oxide and/or aluminum oxynitride substrates. Specifically, the composition comprises an abrasive, a liquid...
US20070145014 Polishing composition for glass substrate  
The present invention provides a polishing composition for a glass substrate having a pH of from 0.5 to 5, containing a silica of which primary particles have an average particle size of from 5 to...
US20070075042 Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method  
A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a stabilizer-metal-vinyl pyridine polymer surface-modified...
US20070145011 Chemical mechanical polishing system and process  
Chemical mechanical polishing (CMP) systems and methods are provided herein. One aspect of the present subject matter is a polishing system. One polishing system embodiment includes a platen...
US20070045233 Polishing liquid composition  
A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a...
US20060205219 Compositions and methods for chemical mechanical polishing interlevel dielectric layers  
The present invention provides an aqueous composition useful for polishing dielectric layers on a semiconductor wafer in interlevel dielectric processes comprising by weight percent 0.001 to 1...
US20070184662 Double-side polishing carrier and fabrication method thereof  
The carrier (10) for double-side polishing has a base material 10a the material of which is stainless steel (SUS) , for example, as is before, and the base material 10a is coated with a coating...
US20070163998 Composition for polishing semiconductor layers  
The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing composition includes 0.05 to 50 weight percent abrasive; and 0.001 to 2 weight percent lambda type...

Matches 1 - 50 out of 115 1 2 3 >