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US20110062115 |
COMPOSITION AND METHOD FOR POLISHING BULK SILICON
The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increase the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water,... |
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US20140329111 |
METHODS OF MAINTAINING AND USING A HIGH CONCENTRATION OF DISSOLVED COPPER ON THE SURFACE OF A USEFUL ARTICLE
A method for maintaining and using a high concentration of dissolved copper on a surface of a useful article by providing a copper surface without coatings thereon which increase the wetting angle... |
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US20070163998 |
Composition for polishing semiconductor layers
The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing composition includes 0.05 to 50 weight percent abrasive; and 0.001 to 2 weight percent lambda type... |
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US20070184661 |
Multi-component barrier polishing solution
The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20... |
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US20060131275 |
Selective slurry for chemical mechanical polishing
An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component... |
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US20060255505 |
Imprint templates for imprint lithography, and methods of patterning a plurality of substrates
The invention comprises methods of patterning a plurality of substrates, and imprint templates used in imprint lithography. In one implementation, a method of patterning a plurality of substrates... |
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US20060138087 |
Copper containing abrasive particles to modify reactivity and performance of copper CMP slurries
A slurry for use in a chemical mechanical polishing process for planarizing copper-based metal structures on a substrate comprises an oxidizer, an organic complexing agent, surfactants, and a... |
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US20070218692 |
Copper-based metal polishing compositions and polishing processes
A copper-based metal polishing composition includes abrasive particles, a borate, an oxidizing agent, and water. A process for polishing a semiconductor substrate includes positioning the... |
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US20060000808 |
Polishing solution of metal and chemical mechanical polishing method
A polishing solution for metal comprises a specific compound represented and an oxidizing agent. A chemical mechanical polishing method for a semiconductor substrate, comprises: supplying a... |
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US20060065620 |
Well use of space for low resistance coil design for write head
In one embodiment of the present invention, a write head includes a P2 pole tip, a back gap layer, and a first insulation layer applied on top and in between the P2 pole tip and the back gap... |
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US20150158140 |
POLISHING HEAD, CHEMICAL-MECHANICAL POLISHING SYSTEM AND METHOD FOR POLISHING SUBSTRATE
A polishing head includes a carrier head and a plurality of pressure units arranged on the carrier head. At least two of the pressure units are located on the same circumferential line relative to... |
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US20060175295 |
Abrasive partilcle for chemical mechanical polishing
An abrasive composition for polishing substrates including a plurality of abrasive particles having a polydisperse particle size distribution with median particle size, by volume, being about 20... |
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US20070084828 |
Polishing composition for a semiconductor substrate
A polishing composition for a semiconductor substrate comprising dihydroxyethylglycine, ceria particles, a dispersant, and an aqueous medium, wherein the ceria particles are contained in an amount... |
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US20070039926 |
Abrasive-free polishing system
The invention provides a chemical-mechanical polishing system comprising a water-soluble silicate compound, an oxidizing agent that oxidizes at least a part of a substrate, water, and a polishing... |
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US20070075040 |
Composition and method for planarizing surfaces
The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina... |
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US20060124592 |
Chemical mechanical polish slurry
Relatively large oxide particles formed during the CMP process can scratch a conductive material being polished. An interference agent is added the polishing slurry, which results in significant... |
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US20060283839 |
Polishing equipment having a longer operating time length
A polishing equipment includes a polishing head mounting thereon a wafer and a polishing pad having a polishing surface for polishing the wafer. The polishing surface has a groove for guiding... |
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US20070128873 |
AQUEOUS DISPERSION FOR CMP, POLISHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging... |
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US20060252266 |
CMP PROCESS OF HIGH SELECTIVITY
A CMP process of high selectivity is described. A substrate having a first material and a second material thereon is provided. A polishing pad that has multiple first grooves and multiple second... |
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US20070148978 |
Slurry compositions, methods of polishing polysilicon layers using the slurry compositions and methods of manufacturing semiconductor devices using the slurry compositions
A slurry composition, a method of polishing polysilicon layers using the slurry composition, and a method of manufacturing a semiconductor device using the same, wherein the slurry composition... |
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US20070272356 |
MULTIPE ZONE CARRIER HEAD WITH FLEXIBLE MEMBRANE
A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base. The flexible membrane includes a central portion with an outer... |
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US20050205837 |
Polishing composition and polishing method
A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated... |
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US20080149884 |
Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon... |
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US20050279733 |
CMP composition for improved oxide removal rate
The invention provides a chemical-mechanical polishing composition that comprises an abrasive, a halide salt, and water. The invention further provides a method for the chemical-mechanical... |
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US20070176140 |
Polishing composition and polishing method
A first polishing composition is used in chemical mechanical polishing for removing one part of the portion of a conductive layer positioned outside a trench. A second polishing composition is... |
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US20050247673 |
Confinement of fluids on surfaces
The invention is directed to a device for applying a fluid to a surface, the device comprising a first conduit for directing a flow of a first fluid towards the surface and a second conduit for... |
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US20060243702 |
CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device
A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not... |
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US20060118760 |
Slurry composition and methods for chemical mechanical polishing
A chemical-mechanical planarization (CMP) slurry comprising at least one abrasive particles at least one oxidizer, and at least one carrier. The abrasive particles can be selected from: a particle... |
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US20070221615 |
Liquid supply method, liquid supply apparatus, substrate polishing apparatus, and method of measuring supply flow rate of liquid
A liquid supply apparatus is to supply a polishing liquid from a polishing supply source onto a polishing surface of a polishing table at a predetermined flow rate. The liquid supply apparatus... |
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US20070075291 |
CMP Slurry, Preparation Method Thereof and Method of Polishing Substrate Using the Same
A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising... |
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US20070145012 |
Slurry and method for chemical-mechanical polishing
Disclosed is a slurry and method for chemical-mechanical polishing operation. The slurry may contain abrasive particles, an oxidizer, a pH controller, a chelating agent and water. The viscosity of... |
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US20070184662 |
Double-side polishing carrier and fabrication method thereof
The carrier (10) for double-side polishing has a base material 10a the material of which is stainless steel (SUS) , for example, as is before, and the base material 10a is coated with a coating... |
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US20070117393 |
Hardened porous polymer chemical mechanical polishing (CMP) pad
A batch of porous polymer chemical-mechanical polishing (CMP) pads for shipment is described. The CMP pads within the batch are for or use in a semiconductor chip manufacturing process. The CMP... |
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US20060124593 |
Colloidal silica based chemical mechanical polishing slurry
A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing... |
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US20070202702 |
Chemical mechanical polishing process
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a... |
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US20060252267 |
Topology-selective oxide CMP
A method of performing chemical mechanical polishing (CMP) is described herein. By way of example, substantially undiluted slurry is applied to a polishing pad. A first CMP process is performed... |
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US20070062910 |
Complex CMP process and fabricating methods of STI structure and interconnect structure
A complex CMP process is described. A target film is coarsely polished using a first polishing platen in a first CMP machine. The remaining target film is then fine polished using successively a... |
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US20060163206 |
Novel polishing slurries and abrasive-free solutions having a multifunctional activator
The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the... |
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US20060046491 |
CMP polishing method and method for manufacturing semiconductor device
A wafer substrate having a wiring pattern formed between materials with a dielectric constant of 2 or less is polished with the polishing pressure being set at 0.01 to 0.2 psi. As a result,... |
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US20070181535 |
COMPOSITIONS AND METHODS FOR CMP OF SEMICONDUCTOR MATERIALS
The invention provides a composition for chemical-mechanical polishing, The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier... |
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US20070145013 |
Method for polishing workpiece, polishing apparatus and method for manufacturing semiconductor device
A region being free of groove is provided in a central portion of the polishing pad, and a region having grooves formed thereon is provided the outer portion thereof. A retainer ring surrounds and... |
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US20050194562 |
Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers
A polishing composition suitable for polishing semiconductor substrates comprises 0.001 to 2 wt % of a thermoplastic polymer; and 0.001 to 1 wt % of polyvinylpyrrolidone; wherein varying the... |
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US20050230354 |
Method and composition of post-CMP wetting of thin films
A method and composition for post-CMP wetting of a wafer having a dielectric thin film is provided. The composition is applied to a wafer after it has been exposed to a CMP slurry. |
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US20070007246 |
Manufacture of semiconductor device with CMP
A manufacture method for a semiconductor device, includes the steps of: in CMP for forming STI, (a) polishing the surface of a film formed on a semiconductor substrate until the surface of the... |
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US20070145010 |
Removal rate estimating method of a chemical mechanical polishing process under mixed products or mixed layers
A removal rate estimating method of a chemical mechanical polishing process under mixed products or mixed layers is provided, the estimation at least comprises: providing a pad removal rate of a... |
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US20060027533 |
System for dynamic slurry delivery in a CMP process
The present invention provides a system (100) for dynamic slurry delivery during a semiconductor polishing process. A dispensing component (118) is adapted to dispense a slurry material (116) onto... |
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US20060249482 |
Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same
A CMP composition and process for planarization of a semiconductor wafer surface having a copper barrier layer portion, said composition comprising an oxidizing agent, a boric acid component, and... |
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US20070228011 |
Novel chemical composition to reduce defects
A chemical composition and methods to remove defects while maintaining corrosion protection of conductors on a substrate are described. The composition includes a conductive solution, a corrosion... |
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US20060037942 |
Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry
A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at... |
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US20060196849 |
Composition and method for polishing a sapphire surface
An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a... |