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US20060196849 |
Composition and method for polishing a sapphire surface
An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a... |
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US20050269295 |
CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate
A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the... |
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US20070181852 |
PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful... |
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US20060118524 |
CERIUM OXIDE ABRASIVE AND METHOD OF POLISHING SUBSTRATES
A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm... |
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US20050205837 |
Polishing composition and polishing method
A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated... |
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US20050263490 |
Method of passivating chemical mechanical polishing compositions for copper film planarization processes
A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control... |
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US20140329111 |
METHODS OF MAINTAINING AND USING A HIGH CONCENTRATION OF DISSOLVED COPPER ON THE SURFACE OF A USEFUL ARTICLE
A method for maintaining and using a high concentration of dissolved copper on a surface of a useful article by providing a copper surface without coatings thereon which increase the wetting angle... |
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US20050211950 |
Chemical-mechanical polishing composition and method for using the same
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of at least one metal selected from... |
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US20060175298 |
Method and composition for polishing a substrate
Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a... |
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US20060049143 |
Polishing composition and polishing method using the same
A polishing composition includes an abrasive, at least one compound of azoles and derivatives thereof, and water. The polishing composition is used in applications for polishing surfaces of... |
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US20050199588 |
Fixed-abrasive chemical-mechanical planarization of titanium nitride
Planarizing solutions, and their methods of use, for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an... |
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US20050173377 |
Semiconductor wafer, apparatus and process for producing the semiconductor wafer
The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides,... |
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US20060250559 |
Glass product for use in ultra-thin glass display applications
The present invention is directed to a substrate product for use in the manufacture of active matrix liquid crystal display panels. The product includes a display substrate suitable for use as a... |
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US20060163206 |
Novel polishing slurries and abrasive-free solutions having a multifunctional activator
The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the... |
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US20060144824 |
Method of polishing a silicon-containing dielectric
The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a... |
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US20050199589 |
Copper-based metal polishing solution and method for manufacturing semiconductor device
Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing... |
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US20080149884 |
Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon... |
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US20070181534 |
Barrier polishing liquid and chemical mechanical polishing method
A barrier polishing liquid is provided that includes (a) a nonionic surfactant represented by Formula (I) below, (b) at least one type of organic acid selected from the group consisting of an... |
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US20070068902 |
Polishing composition and polishing method
A polishing composition contains abrasive grain such as colloidal silica, acid such as citric acid and orthophosphoric acid, an oxidizing agent such as hydrogen peroxide, a compound selected from... |
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US20050194563 |
Bicine/tricine containing composition and method for chemical-mechanical planarization
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The... |
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US20070155178 |
Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same
A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry... |
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US20060124593 |
Colloidal silica based chemical mechanical polishing slurry
A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing... |
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US20060108325 |
Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an... |
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US20050202677 |
Method for dishing reduction and feature passivation in polishing processes
Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a... |
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US20070045234 |
Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02... |
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US20060191870 |
EXTENDED KALMAN FILTER INCORPORATING OFFLINE METROLOGY
An algorithm uses offline metrology to control a process by passing information from an outer control loop to an inner control loop, extended Kalman filter estimator. The inner control loop... |
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US20060175295 |
Abrasive partilcle for chemical mechanical polishing
An abrasive composition for polishing substrates including a plurality of abrasive particles having a polydisperse particle size distribution with median particle size, by volume, being about 20... |
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US20060201914 |
Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion
A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing... |
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US20050189322 |
Compositions and methods for chemical mechanical polishing silica and silicon nitride
The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 zwitterionic compound, 0.01 to... |
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US20070184658 |
Etching Liquid for Controlling Silicon Wafer Surface Shape
A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a... |
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US20060144825 |
Dual reduced agents for barrier removal in chemical mechanical polishing
Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing... |
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US20060021972 |
Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02... |
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US20060000808 |
Polishing solution of metal and chemical mechanical polishing method
A polishing solution for metal comprises a specific compound represented and an oxidizing agent. A chemical mechanical polishing method for a semiconductor substrate, comprises: supplying a... |
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US20050247673 |
Confinement of fluids on surfaces
The invention is directed to a device for applying a fluid to a surface, the device comprising a first conduit for directing a flow of a first fluid towards the surface and a second conduit for... |
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US20050279733 |
CMP composition for improved oxide removal rate
The invention provides a chemical-mechanical polishing composition that comprises an abrasive, a halide salt, and water. The invention further provides a method for the chemical-mechanical... |
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US20070007248 |
Compositions and methods for chemical mechanical polishing silica and silicon nitride
The present invention provides an aqueous composition useful for polishing silica and silicon nitride on a semiconductor wafer comprising by weight percent 0.01 to 5 zwitterionic compound, 0.01 to... |
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US20060276041 |
Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion
A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and... |
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US20060021974 |
Method and composition for polishing a substrate
Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material... |
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US20050284844 |
Cleaning composition for semiconductor components and process for manufacturing semiconductor device
A cleaning composition for semiconductor components comprises a water-soluble polymer (a) having a specific molecular weight and a compound (b) represented by the following formula (1): NR4OH (1)... |
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US20060113283 |
Polishing composition for a semiconductor substrate
A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous... |
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US20060249482 |
Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same
A CMP composition and process for planarization of a semiconductor wafer surface having a copper barrier layer portion, said composition comprising an oxidizing agent, a boric acid component, and... |
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US20050230354 |
Method and composition of post-CMP wetting of thin films
A method and composition for post-CMP wetting of a wafer having a dielectric thin film is provided. The composition is applied to a wafer after it has been exposed to a CMP slurry. |
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US20080283502 |
Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates
A method and system is provided for improved polishing or planarizing of aluminum oxide and/or aluminum oxynitride substrates. Specifically, the composition comprises an abrasive, a liquid... |
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US20070145014 |
Polishing composition for glass substrate
The present invention provides a polishing composition for a glass substrate having a pH of from 0.5 to 5, containing a silica of which primary particles have an average particle size of from 5 to... |
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US20070075042 |
Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a stabilizer-metal-vinyl pyridine polymer surface-modified... |
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US20070145011 |
Chemical mechanical polishing system and process
Chemical mechanical polishing (CMP) systems and methods are provided herein. One aspect of the present subject matter is a polishing system. One polishing system embodiment includes a platen... |
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US20070045233 |
Polishing liquid composition
A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a... |
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US20060205219 |
Compositions and methods for chemical mechanical polishing interlevel dielectric layers
The present invention provides an aqueous composition useful for polishing dielectric layers on a semiconductor wafer in interlevel dielectric processes comprising by weight percent 0.001 to 1... |
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US20070184662 |
Double-side polishing carrier and fabrication method thereof
The carrier (10) for double-side polishing has a base material 10a the material of which is stainless steel (SUS) , for example, as is before, and the base material 10a is coated with a coating... |
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US20070163998 |
Composition for polishing semiconductor layers
The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing composition includes 0.05 to 50 weight percent abrasive; and 0.001 to 2 weight percent lambda type... |