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US20050271813 Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials  
Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method...
US20060118240 Methods and apparatus for downstream dissociation of gases  
A method and apparatus for activating and dissociating gases involves generating an activated gas with a plasma located in a chamber. A downstream gas input is positioned relative to an output of...
US20050016956 Methods and apparatus for cycle time improvements for atomic layer deposition  
Different periods of an ALD cycle are performed using different purge flows and, in some cases, different pumping capacities, while maintaining the reactor chamber at a nominally constant...
US20090261063 Method for Producing a Nanostructure on a Plastic Surface  
A nanostructure is produced at a surface of a substrate composed of a plastic by means of a plasma etching process. A thin layer is applied to the plastic substrate and the plasma etching process...
US20060102471 Electrode array device having an adsorbed porous reaction layer  
There is disclosed an electrode array device having an adsorbed porous reaction layer for improved synthesis quality. The array comprises a plurality of electrodes on a substrate, wherein the...
US20050266691 Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch chemistry  
Certain embodiments include an etching method including providing an etch material, applying a gas mixture including hydrogen, forming a plasma, and etching the etch material. The etch material...
US20150308006 Methods and Apparatus for Forming Multi-Layer Structures Including Use of A Sacrificial Patternable Mold Material  
Numerous electrochemical fabrication methods and apparatus are provided for producing multi-layer structures (e.g. having meso-scale or micro-scale features) from a plurality of layers of...
US20100140222 FILLED POLYMER COMPOSITION FOR ETCH CHAMBER COMPONENT  
A filled polymer composition having improved plasma resistance is disclosed. The composition includes a particle filler dispersed in a polymer matrix. The particle filler can be Nb2O5, YF3, AlN,...
US20080142483 MULTI-STEP DEP-ETCH-DEP HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESSES FOR DIELECTRIC GAPFILLS  
A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap...
US20080041821 Gas Distribution System for Improved Transient Phase Deposition  
Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system...
US20050230350 In-situ dry clean chamber for front end of line fabrication  
A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed...
US20060207971 Atmospheric transfer chamber, processed object transfer method, program for performing the transfer method, and storage medium storing the program  
An atmospheric transfer chamber, connected to an object processing chamber for processing a target object by using a plasma of a halogen-based gas, for transferring the target object therein, the...
US20070017898 METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING  
A method and apparatus for etching photomasks is provided herein. In one embodiment, a method for etching a photomask includes placing a reticle upon a pedestal of a processing chamber, forming a...
US20120018402 PLASMA PROCESSING APPARATUS AND LINER ASSEMBLY FOR TUNING ELECTRICAL SKEWS  
The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for...
US20110282454 Interbody Spinal Implant Having Internally Textured Surfaces  
An interbody spinal implant including a body, the body comprising: a top surface; a bottom surface; opposing lateral sides; and opposing anterior and posterior portions; the top surface, bottom...
US20110139748 ATOMIC LAYER ETCHING WITH PULSED PLASMAS  
A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the...
US20060172542 Method and apparatus to confine plasma and to enhance flow conductance  
The embodiments of the present invention generally relate to a method and an apparatus to confine a plasma within a processing region in a plasma processing chamber. The apparatus may include an...
US20100072172 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD  
There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of...
US20090194505 VACUUM COATING TECHNIQUES  
Techniques are described for improving the quality and yield of vacuum-processed substrates. A system can include a tape-like substrate that is supplied by unwind spool to a web guide, tension...
US20090090695 Yttria insulator ring for use inside a plasma chamber  
A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings...
US20080035608 SURFACE PROCESSING APPARATUS  
A surface processing apparatus is provided for use in the surface processing of a substrate. The surface processing apparatus comprises a plasma source and processing chamber in which a substrate...
US20080029485 Systems and Methods for Precision Plasma Processing  
A tool for modifying a surface of a workpiece comprises a heat source having a modifiable footprint for heating a selectable portion of the surface, a reactive atom plasma torch, and a reactive...
US20070056925 Selective etch of films with high dielectric constant with H2 addition  
A method for selectively etching a high k layer with respect to a silicon based material is provided. The high k layer is placed into an etch chamber. An etchant gas is provided into the etch...
US20060201911 Methods of etching photoresist on substrates  
Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y≧x and z≧0, and one or more optional components to...
US20060037700 Method and apparatus for removing material from a substrate surface  
Methods and apparatus for removing material from a substrate, such as an IC component, are disclosed. The methods include creating a plasma in an evacuatable chamber, by providing a power source...
US20060000802 Method and apparatus for photomask plasma etching  
A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal...
US20060000800 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units  
A sample processing method for processing a sample by introducing a gas into a vacuum vessel and generating plasma in the vacuum vessel. The sample processing method includes the steps of...
US20050242061 Self-cleaning method for plasma CVD apparatus  
A self-cleaning method for a plasma CVD apparatus includes: (a) after unloading an object processed in a reaction chamber, heating a showerhead to a temperature of 200° C. to 400° C.; (b)...
US20080179290 TEMPERATURE-SWITCHED PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL AND FRONT SIDE PHOTORESIST STRIP  
A workpiece is supported on the backside in a vacuum chamber while leaving at least a peripheral annular portion of a backside of the workpiece exposed. The process first increases the temperature...
US20070087577 Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus  
A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited...
US20070000870 Plasma processing method  
The present invention is a plasma processing method including: a step of introducing a substrate into a processing container, a metal or metallic compound film being formed on a surface of the...
US20060175015 Etch chamber with dual frequency biasing sources and a single frequency plasma generating source  
A method and apparatus for selectively controlling a plasma in a processing chamber during wafer processing. The method includes providing process gasses into the chamber over a wafer to be...
US20060043067 Yttria insulator ring for use inside a plasma chamber  
A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings...
US20060016783 Process for titanium nitride removal  
A process of removing titanium nitride from a surface of a substrate includes: providing a process gas including at least one reactant selected from the group consisting of a fluorine-containing...
US20050205518 Method for shaping thin films in the near-edge regions of in-process semiconductor substrates  
A method for shaping and/or encapsulating near-edge regions of a substrate wafer is described. A housing provides channels for flowing a reactive gas towards the wafer edge. The reactive gas is...
US20140332498 SUBSTRATE HOLDER, SUBSTRATE SUPPORTING APPARATUS, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD USING THE SAME  
Provided are a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method. Particularly, there are provided a substrate holder, a...
US20140093953 NON-ADHERENT CELL SUPPORT AND MANUFACTURING METHOD  
A non-adherent cell support for use as a substrate in fluidic chambers used for cell culturing and assays. The non-adherent cell support allows for the formation of sphere cultures from single...
US20110068086 PLASMA ETCHING METHOD  
A plasma etching method includes etching an etching target under plasma conditions using a process gas, the process gas including a saturated fluorohydrocarbon shown by the formula (1): CxHyFz,...
US20080296261 APPARATUS AND METHODS FOR IMPROVING TREATMENT UNIFORMITY IN A PLASMA PROCESS  
Apparatus and methods for improving treatment uniformity in a plasma process. The sacrificial body, which is extends about an outer peripheral edge of the workpiece during plasma processing, is...
US20060163201 PLASMA PROCESSING SYSTEM AND PLASMA TREATMENT PROCESS  
A plasma treatment system for treating multiple substrates with a plasma. The treatment chamber of the plasma treatment system includes at least one pair of electrodes, typically vertically...
US20050257890 Method of cleaning an interior of a remote plasma generating tube and appartus and method for processing a substrate using the same  
A method of cleaning a remote plasma generating tube, and an apparatus and method for processing a substrate using the same, includes providing a cleaning gas into the remote plasma generating...
US20050003675 Dielectric etch chamber with expanded process window  
A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the...
US20070181531 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD  
A microwave plasma processing apparatus 100 includes a plurality of dielectric parts 31, through which microwaves are transmitted via a slot, and gas nozzles 27 disposed at positions lower than...
US20130119018 HYBRID PULSING PLASMA PROCESSING SYSTEMS  
A method for processing substrate in a processing chamber that has at least one plasma generating source and a gas source for providing a process gas into the chamber is provided. The method...
US20090324848 METAL FILM PRODUCTION APPARATUS  
A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a...
US20060278610 Method of controlling chamber parameters of a plasma reactor in accordance with desired values of plural plasma parameters, by translating desired values for the plural plasma parameters to control values for each of the chamber parameters  
Plural chamber parameters of a plasma reactor are controlled in accordance with desired values of plural plasma parameters, by concurrently translating desired values for the plural plasma...
US20060000803 Plasma processing method and apparatus  
A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The...
US20050241762 Alternating asymmetrical plasma generation in a process chamber  
Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the...
US20050139578 Thin-film forming apparatus having an automatic cleaning function for cleaning the inside  
A method of cleaning the inside of a reaction chamber includes reducing the temperature of a susceptor to 470° C. or lower for cleaning; contacting the inside of the reaction chamber including the...
US20160027619 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD  
A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching...

Matches 1 - 50 out of 369 1 2 3 4 5 6 7 8 >