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US20140272345 |
METHOD OF GROWING ALUMINUM OXIDE ONTO SUBSTRATES BY USE OF AN ALUMINUM SOURCE IN AN ENVIRONMENT CONTAINING PARTIAL PRESSURE OF OXYGEN TO CREATE TRANSPARENT, SCRATCH-RESISTANT WINDOWS
A system and process for inter alia coating a substrate such as glass substrate with a layer of aluminum oxide to create a scratch-resistant and shatter-resistant matrix comprised of a thin... |
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US20130285053 |
Sputtering Target for Oxide Thin Film and Process for Producing the Sputtering Target
Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a... |
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US20120325650 |
SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM
There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor... |
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US20050082258 |
Methods of treating non-sputtered regions of PVD target constructions to form particle traps
The invention includes PVD targets having non-sputtered regions (such as, for example, sidewalls), and particle-trapping features formed along the non-sputtered regions. In particular aspects, the... |
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US20130270109 |
OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR
The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of... |
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US20120286219 |
SPUTTERING TARGET, SEMICONDUCTING COMPOUND FILM, SOLAR CELL COMPRISING SEMICONDUCTING COMPOUND FILM, AND METHOD OF PRODUCING SEMICONDUCTING COMPOUND FILM
The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure.... |
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US20090095620 |
Semiconductor device, its manufacturing method, and sputtering target material for use in the method
A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances... |
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US20140299466 |
HIGH-DENSITY METALLIC SPUTTERING TARGETS
The present invention is directed to a process for producing high density, refractory metal products via a press/sintering process. The invention is also directed to a process for producing a... |
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US20120045360 |
CU-GA ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF
Disclosed is a Cu—Ga alloy sputtering target which enables the formation of a Cu—Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the... |
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US20100108503 |
CHALCOGENIDE ALLOY SPUTTER TARGETS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME
In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body comprising at least one chalcogenide... |
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US20090321249 |
Method of Hard Coating a Blade
A sputtering apparatus includes a chamber for containing a feed gas. An anode is positioned inside the chamber. A cathode assembly comprising target material is positioned adjacent to an anode... |
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US20080308774 |
Sputtering Target, Transparent Conductive Film, and Their Manufacturing Method
A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the... |
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US20130341181 |
ZINC OXIDE-BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND THIN-FILM TRANSISTOR HAVING BARRIER LAYER DEPOSITED USING THE SAME
A zinc oxide (ZnO)-based sputtering target, a method of manufacturing the same, and a thin-film transistor (TFT) having a barrier layer deposited using the same. The zinc oxide-based sputtering... |
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US20120301732 |
AL ALLOY FILM FOR USE IN DISPLAY DEVICE
Disclosed is an Al alloy film for use in a display device, which does not undergo the formation of hillocks even when exposed to high temperatures of about 450° C. to 600° C., and has excellent... |
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US20110226617 |
DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE
A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a... |
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US20100202280 |
ALUMINUM-ALLOY REFLECTION FILM FOR OPTICAL INFORMATION-RECORDING, OPTICAL INFORMATION-RECORDING MEDIUM, AND ALUMINUM-ALLOY SPUTTERING TARGET FOR FORMATION OF THE ALUMINUM-ALLOY REFLECTION FILM FOR OPTICAL INFORMATION-RECORDING
There are provided an aluminum-alloy reflection film for optical information-recording, having low thermal conductivity, low melting temperature, and high corrosion resistance, capable of coping... |
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US20090205956 |
Method of making low-E coating using ceramic zinc inclusive target, and target used in same
A ceramic target is used in sputter-depositing a contact layer adjacent an infrared (IR) reflecting layer in certain example embodiments. For example, a ZnOx ceramic target may be used in... |
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US20060201589 |
Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components
The invention includes components containing metallic material. The metallic material can be comprised of a plurality of grains, with substantially all of the grains being substantially equiaxial,... |
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US20140102891 |
Manufacturing Apparatus and Method for Large-Scale Production of Thin-Film Solar Cells
A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a... |
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US20110017591 |
Method of making sputtering target
A method of making a large Mo billet or bar for a sputtering target wherein two or more bodies comprising Mo are placed adjacent one another (e.g. stacked one on the other) with Mo powder metal... |
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US20080217162 |
Method to Deposit a Coating By Sputtering
The invention relates to a method to deposit a coating on a substrate by sputtering using a sputter target comprising a doping element whereby the deposited coating is substantially free of the... |
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US20070251820 |
Sputtering target as well as a joined type sputtering target assembly and a method of making such a joined type sputtering target assembly
[Object] It is to provide a sputtering target which has an excellent adhesion to films made of Au, Cu or an alloy containing at least one of Au and Cu and also an excellent corrosion resistance... |
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US20140042018 |
SPUTTERING TARGET AND METHOD FOR USING THE SPUTTERING TARGET
To provide a sputtering target with which a crystalline metal oxide film can be formed. The sizes of crystal grains or crystal regions of the metal oxide included in the sputtering target are made... |
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US20130341180 |
SPUTTERING TARGET AND METHOD FOR USING THE SAME
To form an oxide film with a high degree of crystallinity, which includes a plurality of metal elements. Further, to provide a sputtering target which enables the oxide film to be formed and a... |
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US20110114999 |
SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME, AND TRANSISTOR
To provide a deposition technique for forming an oxide semiconductor film. An oxide semiconductor film is formed using a sputtering target which contains a sintered body of metal oxide and in... |
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US20100276282 |
Manufacturing Apparatus and Method for Large-Scale Production of Thin-Film Solar Cells
A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a... |
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US20100243439 |
SPUTTERING TARGET AND METHOD FOR PREPARATION THEREOF
A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to... |
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US20140001040 |
SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM
A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa2O4 and a compound shown by InGaZnO4. |
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US20130240802 |
OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR
This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and at least one type of element (X group element) selected from an X group comprising Si, Hf, Ga, Al, Ni,... |
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US20130126346 |
CHALCOGENIDE ALLOY SPUTTER TARGETS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME
In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body comprising at least one chalcogenide... |
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US20120068130 |
Sputtering Target, Transparent Conductive Film, and Their Manufacturing Method
A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the... |
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US20080210551 |
Target for Transparent Conductive Thin Film, Transparent Conductive Thin Film and Manufacturing Method Thereof, Electrode Material for Display, and Organic Electroluminescence Element
The target for the transparent conductive thin film having indium oxide as its major component and containing tungsten and/or molybdenum, obtained by forming a body of indium oxide powder, and... |
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US20070251819 |
Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
The invention includes methods of forming hollow cathode magnetron sputtering targets. A metallic material is processed to produce an average grain size of less than or equal to about 30 microns... |
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US20140242401 |
Tantalum Sputtering Target and Method for Manufacturing Same
Provided is a tantalum sputtering target having a (200)-plane orientation ratio of 70% or less and a (222)-plane orientation ratio of 10% or more at the sputtering surface of the tantalum... |
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US20090211903 |
INDIUM ZINC OXIDE BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND INDIUM ZINC OXIDE BASED THIN FILM
Disclosed are an indium (In) zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and an In Zn oxide based thin film deposited using the In Zn oxide based sputtering... |
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US20090130418 |
TRANSPARENT CONDUCTIVE FILM, ITS PRODUCTION METHOD AND SPUTTERING TARGET USED FOR ITS PRODUCTION
Providing a tin oxide target suitable for the formation of a transparent conductive film by DC sputtering method, DC pulse sputtering method or AC sputtering method. A sputtering target which is... |
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US20070251821 |
Soft magnetic target material
There is disclosed a soft magnetic target material with an improved atmospheric resistance without deterioration of magnetic properties. A soft magnetic target material according to the first... |
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US20100038233 |
AG-BI-BASE ALLOY SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME
The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %−1 or less, as calculated by the... |
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US20090308740 |
CoCrPt Base Sputtering Target and Production Process for the Same
An object of the present invention is to provide a CoCrPt base sputtering target in which high chromium-containing particles containing a chromium atom at a high concentration unevenly distributed... |
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US20090229976 |
Sputtering Target Material Containing Cobalt/Chromium/Platinum Matrix Phase and Oxide Phase, and Process for Producing the Same
Sputtering target materials have improved film-sputtering properties by containing finer metal oxide particles. A process for producing a sputtering target material including a... |
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US20070099032 |
Deposition of enhanced seed layer using tantalum alloy based sputter target
A seedlayer for a magnetic recording medium, the seedlayer formed over a substrate from a sputter target comprised of tantalum (Ta) and an alloying element. The solubility of the alloying element... |
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US20100000857 |
COPPER SPUTTERING TARGET MATERIAL AND SPUTTERING METHOD
A copper sputtering target material includes a sputter surface formed of a copper material including one crystal orientation plane and other crystal orientation planes. By application of... |
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US20150136595 |
SPUTTERING TARGET FOR FORMING WIRING FILM OF FLAT PANEL DISPLAY
A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn... |
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US20130306471 |
SPUTTERING TARGET FOR FORMING MAGNETIC RECORDING MEDIUM FILM AND METHOD FOR PRODUCING SAME
Provided are a sputtering target for forming a magnetic recording medium film, on which a film having a low ordering temperature can be formed and which can suppress generation of particles, and a... |
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US20130233706 |
AL-BASED ALLOY SPUTTERING TARGET AND PRODUCTION METHOD OF SAME
There is provided an Al-based alloy sputtering target, which can provide an enhanced deposition rate (or sputtering rate) when the sputtering target is used, and which can preferably prevent the... |
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US20070108043 |
Sputtering target including titanium silicon oxide and method of making coated article using the same
This invention relates to a sputtering target of or including Ti1-xSixOy and/or a method of making a coated article using such a sputtering target. In certain example embodiments, the Ti1-xSixOy... |
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US20060042938 |
Sputter target material for improved magnetic layer
A sputter target composed of a ferromagnetic alloy having a base metal, and X, where X is a metal having an atomic diameter of less than 0.266 nm and an oxidation potential greater than the base... |
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US20050230244 |
Sputter target material and method of producing the same
A sputter target material which is of a sintered material, wherein the sputter target material consists of 0.5 to 50 atomic % in total of at least one metal element (M) selected from the group of... |
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US20140291144 |
PLASMA DEPOSITION ON A PARTIALLY FABRICATED BATTERY CELL THROUGH A MESH SCREEN
A plasma chamber for depositing a battery component material on a partially fabricated battery cell comprising a battery component layer containing charge-carrying metal species and having an... |
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US20140001039 |
Cu-Ga Alloy Sputtering Target and Method for Producing Same
The purpose of the invention is to provide a sputtering target formed from a Cu—Ga alloy having a Ga composition of 29 at % or more. [Problem] Since a Cu—Ga alloy becomes a brittle γ phase-single... |