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US20120132620 Secure check code scanner  
A device and method for secure check processing in a paper check scanning device that scans the identification encoding characters on the surface of a paper check, creating an electronically...
US20140167228 ETCH PROCESS WITH PRE-ETCH TRANSIENT CONDITIONING  
A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the...
US20120279656 SYSTEM AND METHOD FOR CRITICAL DIMENSION REDUCTION AND PITCH REDUCTION  
A system for forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is...
US20070221125 SEMICONDUCTOR PROCESSING SYSTEM WITH WIRELESS SENSOR NETWORK MONITORING SYSTEM INCORPORATED THEREWITH  
A method and system for non-invasive sensing and monitoring of a processing system employed in semiconductor manufacturing. The method allows for detecting and diagnosing drift and failures in the...
US20150070814 ELECTROSTATIC CHUCK WITH VARIABLE PIXILATED HEATING  
Electrostatic chucks with variable pixelated heating are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface...
US20110005679 PLASMA UNIFORMITY CONTROL THROUGH VHF CATHODE GROUND RETURN WITH FEEDBACK STABILIZATION OF VHF CATHODE IMPEDANCE  
Plasma process uniformity is controlled by maintaining near an optimum value an impedance of a ground return path for VHF source power from an overhead electrode through a workpiece support. A...
US20120043021 ADJUSTABLE CONFINEMENT RING ASSEMBLY  
A plasma confinement assembly for a semiconductor processing chamber is provided. The assembly includes a plurality of confinement rings disposed over each other, and each of the plurality of...
US20140182619 HIGH DOSE IMPLANTATION STRIP (HDIS) IN H2 BASE CHEMISTRY  
Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a...
US20110117749 METHOD FOR REDUCING LINE WIDTH ROUGHNESS WITH PLASMA PRE-ETCH TREATMENT ON PHOTORESIST  
A method for reducing line width roughness (LWR) of a feature in an etch layer below a patterned photoresist mask having mask features is provided. The method includes (a) non-etching plasma...
US20130224961 PLASMA TUNING RODS IN MICROWAVE RESONATOR PLASMA SOURCES  
A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a...
US20150099314 PREDICTIVE METHOD OF MATCHING TWO PLASMA REACTORS  
Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a...
US20110143548 ULTRA LOW SILICON LOSS HIGH DOSE IMPLANT STRIP  
Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental...
US20130186567 TARGET SUPPLY DEVICE  
A target supply device includes a nozzle portion, a cover, a first electrode, and a potential controller. The nozzle portion has a through-hole defined therein to allow a target material to be...
US20140154464 GRAPHENE MEMBRANE WITH SIZE-TUNABLE NANOSCALE PORES  
Technologies are generally described for a graphene membrane with uniformly-sized nanoscale pores that may be prepared at a desired size using colloidal lithography. A graphene monolayer may be...
US20100297788 ARRANGEMENTS AND METHODS FOR IMPROVING BEVEL ETCH REPEATABILITY AMONG SUBSTRATES  
A method, performed in connection with bevel etching of a substrate, for improving bevel-etch repeatability among substrates, is disclosed. The method includes providing an optical arrangement and...
US20080268651 Catch-cup to diverter alignment leveling jig  
An apparatus for leveling and centering a catch-cup chamber to a diverter chamber of a semiconductor processing chamber is described. In one embodiment, the apparatus has a frame with branches. A...
US20150075715 POLYSILICON ETCH WITH HIGH SELECTIVITY  
Provided are methods and systems for removing polysilicon on a wafer. A wafer can include a polysilicon layer and an exposed nitride and/or oxide structure. An etchant with a hydrogen-based...
US20150200042 RECESSING ULTRA-LOW K DIELECTRIC USING REMOTE PLASMA SOURCE  
A portion of the ultra-low k dielectric layer over a substrate is modified using a downstream plasma comprising a first chemistry. The modified portion of the ultra-low k dielectric layer is...
US20090272719 SYSTEM AND METHOD FOR PEDESTAL ADJUSTMENT  
A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing...
US20070175392 MULTIPLE PRECURSOR DISPENSING APPARATUS  
An apparatus for dispensing multiple precursors to a manufacturing tool includes a fluidic manifold having a plurality of interconnected sub-manifolds, a plurality of tanks, each tank containing a...
US20130267097 METHOD AND APPARATUS FOR FORMING FEATURES WITH PLASMA PRE-ETCH TREATMENT ON PHOTORESIST  
A method for forming features through a photoresist mask into an underlying layer is provided. The photoresist mask has patterned mask features. The photoresist mask has patterned mask features. A...
US20130210172 WAFER THINNING APPARATUS HAVING FEEDBACK CONTROL AND METHOD OF USING  
A wafer thinning apparatus includes a first metrology tool configured to measure an initial thickness of the wafer. The wafer thinning apparatus further includes a controller connected to the...
US20130082030 Plasma Tuning Rods in Microwave Resonator Plasma Sources  
The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM...
US20150206715 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS  
A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further,...
US20060134917 Reduction of etch mask feature critical dimensions  
A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features...
US20130020026 WIGGLING CONTROL FOR PSEUDO-HARDMASK  
An apparatus for etching features in an etch layer is provided. A plasma processing chamber is provided, comprising a chamber wall, a chuck, a pressure regulator, an electrode or coil, a gas...
US20120280431 DEVICE AND METHOD FOR ETCHING A PATTERN  
An apparatus for etching a pattern in an etching zone laid out on a substrate includes a pen that can be freely moved manually relative to the etching zone, the pen being equipped with an etching...
US20120238096 METHOD AND APPARATUS FOR INSPECTING A REFLECTIVE LITHOGRAPHIC MASK BLANK AND IMPROVING MASK QUALITY  
An EUV integrated circuit fabrication method and system EUV that includes blank inspection, defect characterization, simulation, pattern compensation, modification of the mask writer database,...
US20140332931 Compensation Devices  
Methods, apparatuses and devices related to the manufacturing of compensation devices are provided. In some cases, an n/p-codoped layer is deposited for calibration purposes to minimize a net...
US20150136324 IMPRINT LITHOGRAPHY METHOD AND APPARATUS  
In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable...
US20140087072 VAPOR DEPOSITION SYSTEM AND METHOD  
A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a...
US20140224767 AUTOMATED ALGORITHM FOR TUNING OF FEEDFORWARD CONTROL PARAMETERS IN PLASMA PROCESSING SYSTEM  
Methods and systems for adapting and/or tuning feedforward control parameters in a plasma processing chamber. In embodiments, a dependent process parameter, such as a chamber component...
US20120160415 MULTI-STEP DEPOSITION CONTROL  
For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two...
US20140183133 GRAPHENE NANOTUBE ARRAY FOR GAS FILTRATION  
Technologies are generally described for a gas filtration device including an array of parallel carbon nanotubes. The carbon nanotubes may extend between first and second substrates, and the ends...
US20090170332 PROCESSING GAS SUPPLYING SYSTEM AND PROCESSING GAS SUPPLYING METHOD  
A gas supplying system includes a processing gas supply pipe for supplying a processing gas from a gas cylinder 210 into a processing apparatus and a nonreactive gas supply source 230 for...
US20120298301 MINIMIZATION OF MASK UNDERCUT ON DEEP ETCH  
A method for forming features in a silicon layer is provided. A mask is formed with a plurality of mask openings over the silicon layer. A polymer layer is deposited over the mask by flowing a...
US20090162950 DRY ETCHING EQUIPMENT AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE  
A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in...
US20130180660 PLASMA TREATMENT DEVICE AND OPTICAL MONITOR DEVICE  
[Problem] To carry out high accuracy optical monitoring of the surface of a substrate to be treated inside a treatment vessel using non-coherent monitor light having a wide wavelength range,...
US20080050661 PHOTOMASK FABRICATION UTILIZING A CARBON HARD MASK  
Methods for forming a photomask using a carbon hard mask are provided. In one embodiment, a method of forming a photomask includes etching a chromium layer through a patterned carbon hard mask...
US20110259520 ARRANGEMENTS FOR IMPROVING BEVEL ETCH REPEATABILITY AMONG SUBSTRATES  
An apparatus for improving bevel etch repeatability among substrates is provided. The apparatus includes an optical arrangement disposed to ascertain at least one bevel edge characteristic of a...
US20070007244 DETECTION OF LOSS OF PLASMA CONFINEMENT  
A system and method for detecting a loss of plasma confinement. The system includes a plasma chamber that includes a plasma space and a non-plasma space. A plasma apparatus generates a plasma...
US20150118859 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS  
A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a...
US20070281491 Residue free hardmask trim  
A method for forming features in a polysilicon layer is provided. A hardmask layer is formed over the polysilicon layer. A photoresist mask is formed over the hardmask layer. The hardmask layer is...
US20150001176 Plan View Sample Preparation  
A method and apparatus for altering the orientation of a charged particle beam sample is presented. Embodiments of the method includes providing a first work piece on a sample stage having a...
US20110006799 METHOD FOR MANUFACTURING PROBE SUPPORTING PLATE, COMPUTER STORAGE MEDIUM AND PROBE SUPPORTING PLATE  
A prescribed pattern is formed on a thin metal plate by photolithography. The thin metal plate is etched by using the pattern as a mask to form a plurality of through-holes having diameters...
US20090186483 ETCHING AMOUNT CALCULATING METHOD, STORAGE MEDIUM, AND ETCHING AMOUNT CALCULATING APPARATUS  
An etching amount calculating method that can stably and accurately calculate the amount of etching even if a disturbance is added. Superposed interference light resulting from superposition of...
US20150118858 ETCHING METHOD FOR SUBSTRATE TO BE PROCESSED AND PLASMA-ETCHING DEVICE  
In one embodiment of the present invention, an etching method for a substrate to be processed comprises: (a1) a step in which etchant gas is supplied into a processing container than accommodates...
US20150155193 ELECTROSTATIC CHUCK WITH VARIABLE PIXELATED MAGNETIC FIELD  
Electrostatic chucks with variable pixelated magnetic field are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front...
US20150099365 TUNABLE UPPER PLASMA-EXCLUSION-ZONE RING FOR A BEVEL ETCHER  
A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric...
US20060175012 Semiconductor fabrication equipment and method for controlling pressure  
Provided are semiconductor fabrication equipment and a related method of controlling pressure in a process chamber associated with the equipment. Multiple connected vacuum lines, each having a...