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US20090291562 HELIUM DESCUMMING  
A method for forming semiconductor devices is provided. A wafer with a patterned photoresist mask over the wafer, wherein the patterned photoresist mask has patterned photoresist mask features...
US20130052757 METHODS FOR OPTIMIZING A PLASMA PROCESS  
Methods for optimizing a plasma process are provided. The method may include obtaining a measurement spectrum from a plasma reaction in a chamber, calculating a normalized measurement standard and...
US20080066778 METHOD OF CLEANING UV IRRADIATION CHAMBER  
A method of cleaning a UV irradiation chamber includes steps of: (i) after completion of irradiating a substrate with UV light transmitted through an optical transmitted window provided in the UV...
US20090298294 METHOD FOR CLEARING NATIVE OXIDE  
A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the...
US20090068844 Etching Process  
Mixtures of fluorine and inert gases like nitrogen and/or argon can be used for etching of semiconductors, solar panels and flat panels (TFTs and LCDs), and for cleaning of semiconductor surfaces...
US20050241672 Extraction of impurities in a semiconductor process with a supercritical fluid  
A method comprises extracting impurities from one or more materials in a semiconductor device via treatment with a supercritical fluid (SCF). The SCF may comprise a solvent and one or more...
US20150107618 OXYGEN CONTAINING PLASMA CLEANING TO REMOVE CONTAMINATION FROM ELECTRONIC DEVICE COMPONENTS  
A gas comprising oxygen is supplied to a plasma source. A plasma jet comprising oxygen plasma particles is generated from the gas. A contaminant is removed from the component using the oxygen...
US20130160795 Plasma Etcher Design with Effective No-Damage In-Situ Ash  
In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated...
US20150020848 Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning  
A lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A grounded second upper plate is positioned...
US20070238199 Method for conditioning a process chamber  
A method of conditioning a processing chamber for a production process includes performing a conditioning step at a conditioning process recipe substantially different than a process recipe of the...
US20130012027 Method for the supply of fluorine  
Elemental fluorine is used as etching agent for the manufacture of electronic devices, especially semiconductor devices, micro-electromechanical devices, thin film transistors, flat panel displays...
US20120180716 METHODS FOR EPITAXIAL SILICON GROWTH  
Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the...
US20110139176 LOW DAMAGE PHOTORESIST STRIP METHOD FOR LOW-K DIELECTRICS  
Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a...
US20060057853 Thermal oxidation for improved silicide formation  
An embodiment of the invention is a method for improving the uniformity of silicide 190 in semiconductor wafers 10. The method may include etching source/drain sidewall spacers 150, performing an...
US20110114115 TUNING HARDWARE FOR PLASMA ASHING APPARATUS AND METHODS OF USE THEREOF  
A continuously variable microwave circuit capable of being tuned to operate under a plurality of distinct operating conditions, comprising: a waveguide comprising an adjustable tuning element...
US20130298942 ETCH REMNANT REMOVAL  
Methods of removing residual polymer from vertical walls of a patterned dielectric layer are described. The methods involve the use of a gas phase etch to remove the residual polymer without...
US20080227301 Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter  
A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The...
US20090081819 METHOD AND APPARATUS FOR MANAGING MANUFACTURING EQUIPMENT, METHOD FOR MANUFACTURING DEVICE THEREBY  
Provided is a method for managing manufacturing apparatuses used in a managed production line including a plurality of manufacturing processes for manufacturing an electronic device, each of the...
US20050019963 Maintaining a reactor chamber of a chemical vapor deposition system  
Maintaining a reactor chamber of a chemical vapor deposition system includes depositing layers on an inner surface of the reactor chamber, where the layers form an accumulation layer. When the...
US20080216864 METHOD AND SYSTEM FOR DISTRIBUTING GAS FOR A BEVEL EDGE ETCHER  
A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge...
US20140273309 Controlling Radical Lifetimes in a Remote Plasma Chamber  
Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by...
US20130276821 Method and System for Distributing Gas for A Bevel Edge Etcher  
A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge...
US20100139554 METHODS AND APPARATUS FOR MAKING GALLIUM NITRIDE AND GALLIUM ALUMINUM NITRIDE THIN FILMS  
Methods and apparatus for forming gallium nitride and gallium aluminum nitride films, such as gallium nitride and gallium aluminum nitride epitaxial layers on a substrate are provided, including...
US20060102197 Post-etch treatment to remove residues  
A method for removing residue from a layer of conductive material on a substrate is provided herein. In one embodiment, the method includes introducing a process gas into a vacuum chamber having a...
US20130213434 METHOD FOR ELIMINATING CONTACT BRIDGE IN CONTACT HOLE PROCESS  
A method for eliminating contact bridge in a contact hole process is disclosed, wherein a cleaning menu comprising a multi-step adaptive protective thin film deposition process is provided, so...
US20050211264 Method and processing system for plasma-enhanced cleaning of system components  
A method for plasma-enhanced cleaning of a system component in a batch-type processing system and a method for monitoring and controlling the cleaning. The cleaning is performed by introducing a...
US20080115801 SEMICONDUCTOR DEVICE FABRICATION EQUIPMENT FOR PERFORMING PEOX PROCESS AND METHOD INCLUDING CLEANING THE EQUIPMENT WITH REMOTELY PRODUCED PLASMA  
Semiconductor device fabrication equipment performs a PEOX (physical enhanced oxidation) process, and includes a remote plasma generator for cleaning a process chamber of the equipment. After a...
US20070181147 Processing-fluid flow measuring method  
An object to be processed such as a semiconductor wafer is processed by supplying a process fluid such as an ozone gas and a water vapor into a process vessel from a supply source through a supply...
US20080276958 SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS  
A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size...
US20080142039 REMOVAL OF NITRIDE DEPOSITS  
Compositions, apparatus and methods for removal of unwanted deposited materials, e.g., nitrides such as silicon nitrides, from substrates. In one implementation, such removal is carried out with a...
US20130302918 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD  
A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be...
US20140060572 PLASMA PROCESSING APPARATUS AND CLEANING METHOD FOR REMOVING METAL OXIDE FILM  
In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a...
US20150075558 Method and System of Surface Polishing  
A method of polishing a surface of an object disposed within a gas chamber is provided. The method includes filling the gas chamber with a discharging medium to a predefined pressure, applying a...
US20150144155 Method for High Aspect Ratio Photoresist Removal in Pure Reducing Plasma  
A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber...
US20070175495 Apparatus for Treating Plasma and Method for Cleaning the Same  
An apparatus for treating plasma includes an inner chamber, an outer chamber receiving the inner chamber and including a gas supplier that supplies a gas into the inner chamber, an inner electrode...
US20060201625 Apparatus for manufacturing semiconductor  
There is provided an apparatus having first and second RF coils arranged in a dome temp control unit (DTCU) enhanced process chamber to provide effective plasma formation during a main process and...
US20080289650 LOW-TEMPERATURE CLEANING OF NATIVE OXIDE  
Disclosed herein is a method of cleaning oxide from a surface in the fabrication of an integrated device using reducing radicals and UV radiation. For silicon surfaces, the cleaning may be...
US20130056023 Chemical for Forming Protective Film  
Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the...
US20090011572 Wafer Working Method  
A wafer working method is provided which is capable of feeding a wafer diced by a laser dicing apparatus to a subsequent step without breaking up the wafer. The wafer working method comprises: a...
US20060065627 Processing electronic devices using a combination of supercritical fluid and sonic energy  
A method of processing a substrate. The method comprises flowing a supercritical fluid and a co-solvent across a substrate placed in a pressure tight vessel and applying a sonic energy to a...
US20100095979 REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS  
A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate...
US20120270406 CLEANING METHOD OF PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD  
A plasma processing apparatus in which a cleaning method is performed includes a plasma generating chamber, having a silicon-containing member, for generating therein plasma by exciting a...
US20090065026 Methods For Treating Surfaces, Methods For Removing One Or More Materials from Surfaces, And Apparatuses For Treating Surfaces  
Some embodiments include utilization of both plasma and aerosol to treat substrate surfaces. The plasma and aerosol may be utilized simultaneously, or sequentially. In some embodiments, the plasma...
US20130189849 PARTICLE REDUCING METHOD AND FILM DEPOSITION METHOD  
A particle reducing method includes a step of supplying a first gas to a vacuum chamber in which a susceptor, formed by an insulating object and the surface of which is provided with a substrate...
US20060264051 Method for formng impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device  
A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate...
US20060042651 Cleaning submicron structures on a semiconductor wafer surface  
Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less...
US20050072444 Method for processing plasma processing apparatus  
A method for processing a plasma processing apparatus having plasma generating means 3, 8, 10, 13 through 15 for generating plasma within a processing chamber, a high-frequency power applying...
US20110180097 THERMAL ISOLATION ASSEMBLIES FOR WAFER TRANSPORT APPARATUS AND METHODS OF USE THEREOF  
An apparatus for treating a workpiece, the apparatus comprising a first chamber configured to treat the workpiece at an elevated temperature, the first chamber including an opening for receiving...
US20050150516 Semiconductor manufacturing method and apparatus  
The present invention aims to provide processes and equipments for manufacturing semiconductors, according to which oxidation of wafer surfaces can be controlled by simple means and contaminants...
US20050241671 Method for removing a substance from a substrate using electron attachment  
A method for removing a substance from at least a portion of a substrate which may be for example, a reactor or a semiconductor material, is disclosed herein. In one aspect, there is provided a...
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