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US20150053136 Vertical Furnace for Improving Wafer Uniformity  
A vertical furnace includes a heat treatment tube, at least one reactive gas inlet, first adiabatic plates and second adiabatic plates. The at least one reactive gas inlet is disposed at or near a...
US20150144062 VAPOR DEPOSITION AND VAPOR DEPOSITION METHOD  
A vapor deposition apparatus includes a stage on which a substrate is mounted; a heater unit that is disposed at a side of the stage and includes a first heater and a second heater, wherein the...
US20080127895 ULTRAVIOLET-RAY-ASSISTED PROCESSING APPARATUS FOR SEMICONDUCTOR PROCESS  
An ultraviolet-ray-assisted processing apparatus (10) for a semiconductor process includes a window disposed in a wall defining the process chamber (12) and to face a worktable (11), and...
US20130059132 Laminate Having a One-Dimensional Composite Structure  
A laminate includes two substrates that are connected by means of a bonding layer, the bonding layer enabling a one-dimensional composite structure. This enables a purely inorganic compound of...
US20060249080 Silicon shelf towers  
A silicon shelf tower for batch thermal processing of silicon wafers in a vertical furnace. The tower includes at least three silicon legs joined to bases and having a vertical arrangement of...
US20110155061 REACTOR, CHEMICAL VAPOR DEPOSITION REACTOR, AND METALORGANIC CHEMICAL VAPOR DEPOSITION REACTOR  
A reactor for film deposition having a first heating unit and the second heating units is described. The temperature of each heating unit is controlled individually by heating and/or cooling...
US20110070370 THERMAL GRADIENT ENHANCED CHEMICAL VAPOUR DEPOSITION (TGE-CVD)  
A chemical vapor deposition (CVD) apparatus is configured for thermal gradient enhanced CVD operation by the inclusion of multiple heaters, positioned so as to provide a desired thermal gradient...
US20130284096 COOLED REFLECTIVE ADAPTER PLATE FOR A DEPOSITION CHAMBER  
In one embodiment, An adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending...
US20140272346 METHOD OF GROWING ALUMINUM OXIDE ONTO SUBSTRATES BY USE OF AN ALUMINUM SOURCE IN AN OXYGEN ENVIRONMENT TO CREATE TRANSPARENT, SCRATCH RESISTANT WINDOWS  
A system and process for inter alia coating a substrate such as glass with a layer of aluminum oxide to create a scratch-resistant and shatter-resistant matrix comprised of a thin...
US20070181065 ETCH RESISTANT HEATER AND ASSEMBLY THEREOF  
An etch resistant heater for use in a wafer processing assembly with an excellent ramp rate of at least 20° C. per minute. The heater is coated with a protective overcoating layer allowing the...
US20070256639 PROCESS FURNANCE OR THE LIKE  
A part of a CVI/CVD furnace in which a heating system for heating the furnace is located is isolated from a remaining part of the furnace exposed to a reactive gas present therein. The shell of...
US20090181168 SOLID PRECURSOR SUBLIMATOR  
An apparatus and method for holding a solid precursor in a sublimator such that the solid precursor can be vaporized for saturating a carrier gas. The apparatus may include alternating disks or...
US20150218728 GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL  
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of...
US20070181066 Baffled liner cover  
A baffled liner cover supported at the top of a liner surrounding a wafer support tower for semiconductor thermal processing. The cover may present a continuous horizontal surface for preventing...
US20070084408 BATCH PROCESSING CHAMBER WITH DIFFUSER PLATE AND INJECTOR ASSEMBLY  
An apparatus for batch processing of a wafer is disclosed. In one embodiment the batch processing apparatus includes a bell jar furnace having a diffuser disposed between gas inlets and the...
US20070169702 Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowire  
Nano-technology is an emerging and intensely competitive field. There are a number of companies that work mainly in the development of various Nano-technology areas. One area that has not received...
US20130269614 VAPOUR CHAMBER AND SUBSTRATE PROCESSING EQUIPMENT USING SAME  
The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate...
US20110247556 Tapered Horizontal Growth Chamber  
A system and techniques for performing deposition having a tapered horizontal growth chamber which includes a susceptor and a tapered channel flow block. A tapered chamber is formed between the...
US20110064878 APPARATUS AND METHOD FOR FILM DEPOSITION  
A deposition apparatus 100 comprises: a heater 121 for heating a silicon wafer 101; an electrically-conductive busbar 123 for supporting the heater 121; and an electrode assembly 107 having a...
US20090277387 SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME  
There are provided a susceptor and a chemical vapor deposition apparatus including the same. The susceptor includes: at least one pocket accommodating a deposition object therein; a seating part...
US20120073502 HEATER WITH LIQUID HEATING ELEMENT  
A heater for a heating system of a chemical vapor deposition process includes a relatively highly emissive body and an electrically conductive heating element disposed within a passageway in the...
US20130284095 OPTICS FOR CONTROLLING LIGHT TRANSMITTED THROUGH A CONICAL QUARTZ DOME  
Embodiments described herein generally relate to apparatus for heating substrates. The apparatus generally include a process chamber having a substrate support therein. A plurality of lamps is...
US20120180724 LIQUID VAPORIZATION SYSTEM  
Provided is a liquid vaporization system capable of promoting vaporization of a liquid material while solving a problem of residual liquid material. A liquid vaporization system has a liquid...
US20100037826 VACUUM VAPOR PROCESSING APPARATUS  
There is provided a vacuum vapor processing apparatus which is capable of adjusting the amount of supply of metal atoms to an object to be processed and which has a simple construction. The vacuum...
US20110064885 APPARATUS AND METHOD FOR FILM DEPOSITION  
The deposition apparatus 100 comprises: a heater 121 for heating a silicon wafer 101; electrically-conductive busbars 123 for supporting the heater 121; electrode assemblies 107 for supporting the...
US20050178334 Susceptor Unit and Apparatus in Which the Susceptor Is Installed  
Affords a susceptor unit in which the temperature uniformity of the susceptor baseplate is enhanced, and devices in which such a susceptor unit is installed. The susceptor unit is made up of a...
US20130109159 GAS DISPERSION APPARATUS  
A gas dispersion apparatus for use with a process chamber, comprising: a quartz body having a top, a ring coupled to a bottom surface of the top and a bottom plate having dispersion holes coupled...
US20110265723 METAL-ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS  
A metal-organic chemical vapor deposition (MOCVD) apparatus is described. The MOCVD apparatus includes a reaction chamber, a rotation stand, a wafer susceptor, a heater and a shower head. The...
US20110250366 BELL JAR FOR SIEMENS REACTOR INCLUDING THERMAL RADIATION SHIELD  
A bell jar for a Siemens reactor of the type used to deposit polycrystalline silicon on a plurality of heated silicon rods via chemical vapor deposition process. The bell jar includes a thermally...
US20110265724 METAL-ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS  
A metal-organic chemical vapor deposition (MOCVD) apparatus is described. The MOCVD apparatus includes a reaction chamber, a rotation stand, a wafer susceptor, a heater and a shower head. The...
US20150203950 Method for Treating Elongated Metal Product by Heating and Oxidizing the Surface in a Controlled Environment  
A method and apparatus are provided for making a metal product with improved surface characteristics. The method provides for treating the metal product through a method including: heating the...
US20150136027 TRAP ASSEMBLY IN FILM FORMING APPARATUS  
A trap mechanism for trapping exhaust gas from a process chamber. The trap assembly includes a housing containing a plurality of trap units. The plurality of trap units are arranged successively...
US20060165904 Semiconductor-manufacturing apparatus provided with ultraviolet light-emitting mechanism and method of treating semiconductor substrate using ultraviolet light emission  
An apparatus for treating a semiconductor substrate includes a chamber an internal pressure of which can be controlled from a vacuum to the vicinity of an atmospheric pressure, multiple...
US20110259879 Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers  
Embodiments of the invention generally relate to apparatuses and methods for utilizing a plurality of induction heat sources to uniformly heat a plurality of substrates within a processing...
US20130273265 APPARATUS AND METHOD FOR SUPPLYING ELECTRIC POWER TO A CVD-REACTOR  
An apparatus and method for applying a voltage across silicon rods in a CVD reactor has a series connection wherein the silicon rods may be inserted as resistors. A first power supply unit has...
US20150259826 EPITAXIAL GROWTH SYSTEMS  
Disclosed is about an epitaxial growth system, including an epitaxial growth reactor chamber; a susceptor disposed in the epitaxial growth reactor chamber, wherein the susceptor includes a top...
US20090238992 POLYCRYSTALLINE SILICON REACTOR  
A polycrystalline silicon reactor 1 which can prevent polycrystalline silicon which deposits on the surface of an electrode 5 holding a silicon seed rod 4 from being peeled off is provided. In a...
US20060130764 Susceptor for apparatus fabricating thin film  
A susceptor for an apparatus fabricating a thin film on a substrate includes a body supported by a supporter therebelow; a laying groove at a top surface of the body; a temperature adjuster in the...
US20130291795 THIN FILM DEPOSITION SYSTEM WITH COOLING MODULE  
A film deposition apparatus is disclosed. The apparatus comprises: a reaction chamber, a susceptor, a heating module, a driving module, and a cooling module. The susceptor is used for bearing at...
US20070044916 Vacuum processing system  
A ceramic film is formed by a spray method on a base material of an electrostatic attraction device. Electrode films for electrostatic attraction are formed by a spray method on a surface of the...
US20080169279 HEATING DEVICE, COATING AND DEVELOPING SYSTEM, HEATING METHOD AND STORAGE MEDIUM  
A heating device has a heating chamber 3. An initial temperature distribution is created in a surface of a substrate (wafer W) when the substrate is carried into the heating chamber 3 . . . ....
US20120196437 METHODS OF FORMING COPPER WIRING AND COPPER FILM, AND FILM FORMING SYSTEM  
A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the...
US20130186338 Shielding Design for Metal Gap Fill  
The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system...
US20120118234 METAL ORGANIC CHEMICAL VAPOR DEPOSITION EQUIPMENT  
Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating...
US20110155049 MODERN HYDRIDE VAPOR-PHASE EPITAXY SYSTEM & METHODS  
Hydride vapor-phase deposition (HVPE) systems are disclosed. An HVPE hydride vapor-phase deposition system may include a reactant source chamber and a growth chamber containing a susceptor coupled...
US20050072360 Submicron size metal deposit apparatus  
The method by which a small amount of gaseous organic metal is loaded in a vacuum atmosphere, the gaseous organic metal is decomposed by irradiation with an electron beam, and metal components are...
US20080163818 Substrate heating apparatus and purging method thereof  
A substrate heating apparatus of the present invention, which heats a substrate mounted on a mount table 104 having heating means 108, in a processing vessel 102, includes a supporting part 202...
US20090186194 Batch Process for Coating Nanoscale Features and Devices Manufactured From Same  
A process for coating of at least one conformal thin film simultaneously onto the surface of a plurality or batch of substrates having nanoscaled features is provided. The process involves...
US20150218699 HEAT EXCHANGER TYPE REACTION TUBE  
A heat exchanger type reaction tube includes a first tube part that forms a first flow channel into which a feed gas flows and in which the feed gas moves down; a second tube part that forms a...
US20070125303 High-throughput deposition system for oxide thin film growth by reactive coevaportation  
A heater for growing a thin film on substrates contained on a substrate support member includes a plurality of heater elements. The substrate support member containing the substrates is at least...