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US20120090784 CHAMBER LID HEATER RING ASSEMBLY  
Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The...
US20140120731 ICP SOURCE DESIGN FOR PLASMA UNIFORMITY AND EFFICIENCY ENHANCEMENT  
An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An...
US20130102155 ICP SOURCE DESIGN FOR PLASMA UNIFORMITY AND EFFICIENCY ENHANCEMENT  
An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An...
US20120091098 HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVELY COUPLED PLASMA REACTOR WITH IMPROVED UNIFORMITY  
Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma...
US20130189848 SHIELDED LID HEATER ASSEMBLY  
A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The...
US20060144520 Viewing window cleaning apparatus  
A viewing port for a processing chamber is provided that includes a viewing window cleaning apparatus, a viewing window, and a mounting, where the viewing window cleaning apparatus is coupled to...
US20130014898 PLASMA BREAKERS AND METHODS THEREFOR  
A plasma processing system comprising of a plasma source having a source enclosure for generating plasma is provided. The plasma processing system also includes a plasma breaker disposed inside...
US20150211123 TORCH SYSTEM FOR DEPOSITING PROTECTIVE COATINGS ON INTERIOR WALLS AND RECESSES PRESENT ON THE FLAT SURFACE OF AN OBJECT  
The invention relates to a torch system for deposition of protective coatings on the walls of holes and recesses on the surface of showerheads used in capacitive coupling plasma processing...
US20110278260 INDUCTIVE PLASMA SOURCE WITH METALLIC SHOWER HEAD USING B-FIELD CONCENTRATOR  
A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma...
US20120304933 PARALLEL PLATE REACTOR FOR UNIFORM THIN FILM DEPOSITION WITH REDUCED TOOL FOOT-PRINT  
A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The...
US20130255575 PLASMA GENERATOR  
Provided is a plasma generator which includes a vacuum chamber, a plurality of ground electrodes disposed inside the vacuum container and extending in parallel to each other, a plurality of power...
US20150041062 PLASMA PROCESSING CHAMBER WITH REMOVABLE BODY  
An apparatus for plasma processing a wafer is provided. A bottom plate is provided. A tubular chamber wall with a wafer aperture is adjacent to the bottom plate. A bottom removable seal provides a...
US20140020837 INDUCTIVELY COUPLED PLASMA SOURCE WITH MULTIPLE DIELECTRIC WINDOWS AND WINDOW-SUPPORTING STRUCTURE  
A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis...
US20150179406 ELECTRICAL CIRCUIT TO IMPEDANCE MATCH A SOURCE AND A LOAD AT MULTIPLE FREQUENCIES, METHOD TO DESIGN SUCH A CIRCUIT  
A matching circuit is provided to adapt electrical impedance simultaneously for at least one pair of a higher and a lower frequencies between a plasma reactor and a generator; said matching...
US20110146576 SYSTEMS FOR APPLYING A THERMAL BARRIER COATING TO A SUPERALLOY SUBSTRATE  
Systems for applying a thermal barrier coating to a superalloy substrate including at least one target for supplying a material for making the thermal barrier coating; at least one laser operably...
US20080286463 RF SHUTTER  
The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and...
US20130015053 INDUCTIVELY COUPLED RF PLASMA SOURCE WITH MAGNETIC CONFINEMENT AND FARADAY SHIELDING  
Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The...
US20100206231 EXHAUST UNIT, EXHAUST METHOD USING THE EXHAUST UNIT, AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE EXHAUST UNIT  
A substrate processing apparatus includes a chamber having an inner space where a process is carried out with respect to a substrate and an exhaust unit for exhausting substance in the inner space...
US20090008239 REMOTE INDUCTIVELY COUPLED PLASMA SOURCE FOR CVD CHAMBER CLEANING  
The present invention generally includes a remote plasma source and a method of generating a plasma in a remote plasma source. Cleaning gas may be ignited into a plasma in a remote location and...
US20080169183 Plasma Source with Liner for Reducing Metal Contamination  
A plasma source having a plasma chamber with metal chamber walls contains a process gas. A dielectric window passes a RF signal into the plasma chamber. The RF signal excites and ionizes the...
US20070044715 SUPPLYING RF POWER TO A PLASMA PROCESS  
Generating drive signals of at least two RF power generators which supply RF power to a plasma process, in which at least two drive signals, each driving one RF power generator, are generated in...
US20070084405 Adaptive plasma source for generating uniform plasma  
There is provided an adaptive plasma source, which is arranged at an upper portion of a reaction chamber having a reaction space to form plasma and is supplied with RF (radio frequency) power from...
US20090280276 Method and Device for Plasma-Assisted Chemical Vapour Deposition on the Inner Wall of a Hollow Body  
The invention relates to a method for plasma-assisted chemical vapour deposition for coating or material removal on the inner wall of a hollow body (42). The method involves introducing a gas...
US20150129133 PLASMA DEVICE  
The plasma device is disclosed, the plasma device including a chamber configured to accommodate a substrate, and a plasma source formed at one side of the chamber to excite a reaction gas of the...
US20100065215 Plasma generating apparatus  
A plasma generating apparatus including a plurality of plasma source modules. Each plasma source module includes a ferrite core having high magnetic permeability and a plasma channel through which...
US20100304046 PLASMA GENERATOR, PLASMA CONTROL METHOD AND METHOD OF PRODUCING SUBSTRATE  
The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction....
US20100015357 CAPACITIVELY COUPLED PLASMA ETCH CHAMBER WITH MULTIPLE RF FEEDS  
A capacitive plasma discharge system employing multiple feeds of RF source power across an area of an electrode. Multiple RF feed locations across the electrode allow for control of the axial...
US20060174834 Side RF coil and side heater for plasma processing apparatus  
A RF plasma generation and temperature control system for an inductively coupled plasma process chamber. The plasma generation system includes a heater that includes an elongated upper heating...
US20100154709 COMBINED WAFER AREA PRESSURE CONTROL AND PLASMA CONFINEMENT ASSEMBLY  
A combined pressure control/plasma confinement assembly configured for confining a plasma and for at least partially regulating pressure in a plasma processing chamber during plasma processing of...
US20110268983 FILM-FORMING TREATMENT JIG, PLASMA CVD APPARATUS, METAL PLATE AND OSMIUM FILM FORMING METHOD  
To provide a film-forming treatment jig for forming a thin film on a plate having a through hole of a micro diameter by a single plasma film-forming treatment. The film-forming treatment jig...
US20090250334 PLASMA GENERATOR SYSTEMS AND METHODS OF FORMING PLASMA  
Systems and methods of forming plasma are provided. In an embodiment, a plasma generator system is provided including a container, a single coil disposed around the container, the single coil...
US20090151872 LOW COST HIGH CONDUCTANCE CHAMBER  
A process chamber having high conductance and a method of manufacturing the process chamber are disclosed. The process chamber is machined from a single piece of aluminum where a process cavity...
US20080173237 Plasma Immersion Chamber  
Embodiments described herein generally provide a toroidal plasma source, a plasma channeling device, a showerhead, and a substrate support assembly for use in a plasma chamber. The toroidal plasma...
US20120043022 PLASMA CHAMBER TOP PIECE ASSEMBLY  
A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma...
US20120160167 External Heating of Substrate Tubes in Plasma Chemical Vapor Deposition Processes  
A PCVD apparatus including an insulative covering disposed to surround at least a portion of the substrate tube and provide external heating of the substrate tube during the deposition process....
US20110114601 PLASMA SOURCE DESIGN  
Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that...
US20110097901 DUAL MODE INDUCTIVELY COUPLED PLASMA REACTOR WITH ADJUSTABLE PHASE COIL ASSEMBLY  
Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may...
US20050188922 Plasma processing unit  
According to the present invention, since the inside of a hole formed in a sidewall of a process vessel of a plasma processing unit is filled with a dielectric, a propagation rate of the...
US20070145006 PLASMA ETCHING APPARATUS  
Embodiments relate to a plasma etching apparatus that may include a lower chamber, an upper chamber installed on the upper side of the lower chamber, for providing a space in which plasma is...
US20120090785 ANTENNA UNIT FOR GENERATING PLASMA AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME  
An antenna unit for generating a plasma includes: a first antenna including a first incoming portion and a plurality of first sub-antennas divided from the first incoming portion; and a second...
US20050205212 RF Plasma Source With Conductive Top Section  
A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A...
US20090298287 METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR  
A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in...
US20140202385 FLAT-PLATE TYPE PECVD DEVICE  
The present application discloses a flat-plate type PECVD device including a vacuum chamber for accommodating a work piece and a plasma emitter provided above the vacuum chamber. The plasma...
US20070163500 Rectangular planar-type ICP antenna having balanced ratio of magnetic field and electric potential  
The rectangular planar-type ICP (Inductively Coupled Plasma) antenna having a balanced ratio of a magnetic field and an electric potential is capable of improving uniformity of plasma as well as...
US20130233490 PLASMA PROCESSING CHAMBER FOR BEVEL EDGE PROCESSING  
A process chamber includes a wafer support to mount a wafer to be processed in the process chamber, with the wafer having an annular edge exclusion area. A first electrically grounded ring extends...
US20120024449 PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS  
Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be...
US20060000413 Apparatus for an optimized plasma chamber top piece  
A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma...
US20140273537 HIGH DENSITY PLASMA REACTOR WITH MULTIPLE TOP COILS  
A plasma reactor includes an enclosure having a top and a bottom and defining a processing chamber. Inlets are formed in the enclosure for injecting process gas into the chamber. An outlet is...
US20090022905 RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS  
In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is...
US20070245963 Inductively Coupled Plasma Reactor with Multiple Magnetic Cores  
There is provided an inductively coupled plasma reactor. The inductively coupled plasma reactor is connected to a transformer with multiple magnetic cores and a primary winding, to transfer an...

Matches 1 - 50 out of 276 1 2 3 4 5 6 >