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US20130305983 Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing  
The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal....
US20070251446 Chemically attached diamondoids for CVD diamond film nucleation  
Provided is a novel method for nucleating the growth of a diamond film. The method comprises providing a substrate having a diamondoid chemically attached to it, which serves as a superior...
US20140283735 METHOD FOR GROWTH OF INGOT  
A method for growing an ingot according to the embodiment includes filling a first powder in a crucible; raising a temperature of the crucible; forming a second powder by grain-growing the first...
US20110253034 CRYSTAL PREPARING DEVICE, CRYSTAL PREPARING METHOD, AND CRYSTAL  
In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a...
US20080182092 DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH  
Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density≦100 cm−2 Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet...
US20110290174 ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER  
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed...
US20140220298 SIC CRYSTAL WITH LOW DISLOCATION DENSITY  
A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a...
US20140352607 Raw Material for Growth of Ingot, Method for Fabricating Raw Material for Growth of Ingot and Method for Fabricating Ingot  
A raw material for growing an ingot according to the embodiment comprises an agglomerate raw material in which fine particles are agglomerated, wherein the agglomerate raw material has a granular...
US20120156122 METHOD OF PRODUCING SILICON CARBIDE CRYSTAL, AND SILICON CARBIDE CRYSTAL  
In a method of producing a SiC crystal by sublimation, the atmosphere gas for growing a SiC crystal contains He. The atmosphere gas may further contain N. The atmosphere gas may further contain at...
US20090169814 METHOD FOR MANUFACTURING DIAMOND MONOCRYSTAL HAVING A THIN FILM, AND DIAMOND MONOCRYSTAL HAVING A THIN FILM  
A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under...
US20120068192 CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES  
A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial...
US20140234194 Vanadium Doped SiC Single Crystals and Method Thereof  
A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the...
US20150059641 BULK DIFFUSION CRYSTAL GROWTH PROCESS  
The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the...
US20150096488 PREFERRED VOLUMETRIC ENLARGEMENT OF III-NITRIDE CRYSTALS  
The present disclosure generally relates to systems and methods for growing and preferentially volumetrically enhancing group III-V nitride crystals. In particular the systems and methods include...
US20150020731 DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH  
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet...
US20150013592 DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH  
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet...
US20110217505 Low-Defect nitride boules and associated methods  
This invention describes Extreme low-defect Nitride Boules and associated methods of manufacture using low-defect seed templates or composite templates arranged in precise hexagonal or partial...
US20120285370 SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS  
In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A...
US20090056374 Gemstone Facet Configuration  
A gemstone can include a crown portion having a table facet, a plurality of trapezoidal facets, a plurality of irregular-hexagonal facets, a plurality of irregular-pentagonal facets, and a...
US20120086001 METHOD FOR PRODUCTION OF ZINC OXIDE SINGLE CRYSTALS  
The disclosed subject matter includes a method of producing zinc oxide (ZnO) single crystals in an enclosure. The ZnO single crystals have a low concentration of lithium and hydrogen impurities.
US20130320275 Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof  
In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace...
US20150176152 APPARATUS AND METHOD FOR BULK VAPOUR PHASE CRYSTAL GROWTH  
A vapour conduit for use in an apparatus for bulk vapour phase crystal growth, an apparatus for bulk vapour phase crystal growth, and a process for bulk vapour phase crystal growth are described....
US20070000433 III-nitride semiconductor device fabrication  
A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to...
US20120039789 APPARATUS FOR MANUFACTURING ALUMINUM NITRIDE SINGLE CRYSTAL, METHOD FOR MANUFACTURING ALUMINUM NITRIDE SINGLE CRYSTAL, AND ALUMINUM NITRIDE SINGLE CRYSTAL  
Provided is a manufacturing device of an aluminum nitride single crystal including a crucible. An aluminum nitride raw material and a seed crystal are stored in an inner portion of the crucible....
US20140004303 SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL  
An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for...
US20120183466 SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL  
An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for...
US20070221120 Level Realignment Following an Epitaxy Step  
The invention relates to inter-level realignment after a stage of epitaxy on a face (31) of a substrate (30), comprising the production of at least one initial guide mark (32) on the face of the...
US20130239878 APPARATUS AND METHOD FOR PRODUCTION OF ALUMINUM NITRIDE SINGLE CRYSTAL  
The invention is an apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the...
US20120000414 GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL  
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of...
US20140158042 APPARATUS FOR FABRICATING INGOT  
An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a seed holder for fixing a seed disposed over the raw material, wherein a...
US20110308449 CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTION APPARATUS AND PRODUCTION METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE  
The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are...
US20120025153 SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF THE SAME  
A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm−3 or higher and a ratio of an aluminum concentration to the nitrogen...
US20130327265 METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL  
There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a...
US20150068445 METHOD FOR PRODUCING BULK SILICON CARBIDE  
A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside...
US20080022923 SEED HOLDER FOR CRYSTAL GROWTH REACTORS  
A seed holder for use in a crystal growth reactor. The seed holder has a drool and a washer of outer diameter substantially the same as the drool inner diameter. A main body is disposed over the...
US20110104438 AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT  
A method of producing an AlxGa(1-x)N (0
US20150068446 METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE USING A SILICON CARBIDE SEED  
A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside...
US20120177902 Multiferroics that are both ferroelectric and ferromagnetic at room temperature  
Multiferroic articles including highly resistive, strongly ferromagnetic strained thin films of BiFe0.5Mn0.5O3 (“BFMO”) on (001) strontium titanate and Nb-doped strontium titanate substrates were...
US20110111171 SEED CRYSTAL FOR SILICON CARBIDE SINGLE CRYSTAL GROWTH, METHOD FOR PRODUCING THE SEED CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING THE SINGLE CRYSTAL  
A seed crystal for silicon carbide single crystal growth (13) which is attached to the lid of a graphite crucible charged with a raw material silicon carbide powder. The seed crystal includes a...
US20150218729 ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM  
In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm,...
US20130153836 METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE  
In a powder fabrication step (S1) in this method for producing a silicon carbide singe crystal, a metal material containing at least one of vanadium, niobium, and tungsten is mixed into silicon...
US20120107218 PRODUCTION METHOD OF SILICON CARBIDE CRYSTAL, SILICON CARBIDE CRYSTAL, AND PRODUCTION DEVICE OF SILICON CARBIDE CRYSTAL  
A production method of a SiC crystal includes the following steps. That is, there is prepared a production device including a crucible and a heat insulator covering an outer circumference of the...
US20150068447 METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE FROM A SILICON CARBIDE PRECURSOR  
A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside...
US20140048014 Crystal Growth Apparatus  
An apparatus for crystal growth including a source chamber configured to contain a source material, a growth chamber, a passage for transport of vapour from the source chamber to the growth...
US20130068157 METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL  
A method of manufacturing silicon carbide crystal includes the steps of forming silicon carbide crystal on a main surface of a base composed of carbon and removing the base from silicon carbide...
US20140216330 APPARATUS FOR FABRICATING INGOT AND METHOD FOR FABRICATING INGOT  
An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the...
US20080072817 Silicon carbide single crystals with low boron content  
In a crystal growth method, an enclosed growth crucible is provided inside of a growth chamber. The growth crucible has polycrystalline source material and a seed crystal disposed in spaced...
US20090208749 Group III Nitride Single Crystal and Method of Its Growth  
Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a...
US20110026103 CRYSTAL FOR OPTICAL CONVERSION  
An efficient broadband crystal for wavelength conversion, the crystal being a quasi-phase matched non-linear crystal, having an aperiodic poled structure, each period being tuned, and wherein said...
US20050132950 Method of growing aluminum-containing nitride semiconductor single crystal  
Disclosed herein is a method of growing a nitride semiconductor single crystal. The method comprises the steps of preparing a nitride seed layer on a substrate for growing a nitride single...
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