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US20120240843 On Demand Thin Silicon  
A method and system is disclosed for making ultra thin wafer(s) or thin film(s) of c-Si on demand. One aspect of certain embodiments includes using a planar seed or crystal template in combination...
US20060254500 Line scan sequential lateral solidification of thin films  
A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a...
US20060249072 Method of synthesizing a fluoride growth material for improved outgassing  
Improved contaminant removal from alkaline- or alkali-earth metal fluoride crystal growth material can be obtained by coprecipitating an alkaline- or alkali-earth metal fluoride with a scavenging...
US20080118754 Single crystal silicon rod fabrication methods and a single crystal silicon rod structure  
A method of fabricating a single crystal silicon rod may include forming an insulation layer on a substrate, forming a hole in the insulation layer, selectively growing silicon in the hole,...
US20120273792 Zone Melt Recrystallization of Thin Films  
A solar cell comprises a recrystallized layer wherein the recrystallized layer has at least one crystal grain at least 90% of the size of the illuminated area of the solar cell.
US20070141741 Semiconductor laminated structure and method of manufacturing nitirde semiconductor crystal substrate and nitirde semiconductor device  
In a semiconductor laminated structure, a base substrate has a nitride semiconductor crystal plane in an upper surface thereof. A growth blocking film encloses a flow-through pattern which is...
US20070277728 METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE HAVING A STRAINED SILICON LAYER  
A wafer having a silicon layer that is strained is used to form transistors. The silicon layer is formed by first forming a silicon germanium (SiGe) layer of at least 30 percent germanium that has...
US20170145586 SYSTEM AND METHOD FOR SINGLE CRYSTAL GROWTH WITH ADDITIVE MANUFACTURING  
Present embodiments include an additive manufacturing tool configured to receive a metallic material and to supply a plurality of droplets to a part at a work region of the part, wherein each...
US20150191847 METHOD FOR PRODUCING A SINGLE-CRYSTALLINE LAYER  
Process for fabricating a thin single-crystalline layer n, including steps of: a) providing a support substrate n, b) placing a seed sample n, c) depositing a thin layer n so as to form an initial...
US20140331915 METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON  
Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as...

Matches 1 - 10 out of 10