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US20150007764 |
METHOD FOR MEASURING THREE-DIMENSIONAL SHAPE OF SILICA GLASS CRUCIBLE, AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON
A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible... |
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US20140360425 |
Method For Controlling The Diameter Of A Single Crystal To A Set Point Diameter
The diameter of a single crystal is controlled to a set point diameter during pulling of the single crystal from a melt contained in a crucible and which forms a meniscus at a phase boundary on... |
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US20100307403 |
(110) DISLOCATION-FREE MONOCRYSTALLINE SILICON AND ITS PREPARATION AND THE GRAPHITE HEAT SYSTEM USED
The invention discloses (110) dislocation-free monocrystalline silicon and its preparation and the graphite heating system used. The process for preparation is as follows: clearing furnace and... |
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US20120055395 |
CZOCHRALSKI CRYSTAL GROWTH PROCESS FURNACE THAT MAINTAINS CONSTANT MELT LINE ORIENTATION AND METHOD OF OPERATION
A Czochralski process (“CZ”) crystal growth method and furnace having a heater capable of generating a heating zone, a crucible within the heating zone and capable of retaining a volume of molten... |
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US20140290563 |
METHOD OF MANUFACTURING SINGLE CRYTSAL INGOT, AND SINGLE CRYSTAL INGOT AND WAFER MANUFACTURED THEREBY
Provided is a method of evaluating quality of a wafer or a single crystal ingot and a method of controlling quality of a single crystal ingot by using the same. The method of evaluating quality of... |
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US20130291788 |
METHOD FOR THE PREPARATION OF DOPED GARNET STRUCTURE SINGLE CRYSTALS WITH DIAMETERS OF UP TO 500 MM
Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout... |
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US20130133567 |
SYSTEMS AND PROCESSES FOR CONTINUOUS GROWING OF INGOTS
An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an... |
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US20100319612 |
METHOD OF PRODUCING SILICON SINGLE CRYSTAL
In a method of producing a silicon single crystal through a Czochralski method, the pulling process includes a process of conducting a neck trial pulling for the formation of a neck portion after... |
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US20130213295 |
METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT
An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an... |
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US20100024717 |
Reversed action diameter control in a semiconductor crystal growth system
A semiconductor crystal growth method includes pulling a crystal from melt in a crucible at a nominal pull speed and generating a crucible lift signal to compensate reduction in melt level in the... |
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US20120210931 |
METHODS FOR CONTROLLING MELT TEMPERATURE IN A CZOCHRALSKI GROWER
In a Czochralski process for growing single crystal silicon ingots, a system is provided for adding solid material to the liquid silicon during crystal growth for the purpose of directly... |
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US20050120945 |
Quartz crucibles having reduced bubble content and method of making thereof
A quartz crucible having reduced/controlled bubble content is disclosed, comprising an outer layer and an inner layer doped with elements and compounds that: a) react with oxygen and nitrogen at... |
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US20140102357 |
Method and Apparatus for Reducing Impurities in a Single Crystal Based on Ingot Length
A method for growing a single crystal in a chamber. The method includes heating raw material to form a melt for forming the single crystal. A crystal seed is then inserted into the melt and pulled... |
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US20140033967 |
METHOD FOR MANUFACTURING SINGLE CRYSTAL
In consideration of influence of segregation, an evaporation area of a volatile dopant and influence of pulling-up speed at the time of manufacturing a monocrystal using a monocrystal pulling-up... |
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US20120067272 |
Single crystal pulling-up apparatus and single crystal pulling-up method
According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion... |
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US20100326349 |
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, APPARATUS FOR PULLING SILICON SINGLE CRYSTAL AND VITREOUS SILICA CRUCIBLE
Leakage of silicon melt is monitored and touch of a seed crystal at the silicon melt is detected, and in addition, reinforcement of a vitreous silica crucible to be endurable during pulling for a... |
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US20150252491 |
Apparatus for manufacturing ingot and method of manufacturing ingot
Disclosed are an apparatus for manufacturing an ingot and a method of manufacturing the ingot to control a concentration of dopant. The apparatus for manufacturing an ingot to intermittently or... |
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US20070240629 |
Method for manufacturing a silicon single crystal
The present invention relates to a method for manufacturing a silicon single crystal by pulling up the silicon single crystal from a molten silicon by the CZ method, comprising: a cooling step of... |
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US20070178032 |
Transparent ferromagnetic compound containing no magnetic impurity such as transition metal or rare earth metal and forming solid solution with element having imperfect shell, and method for adjusting ferromagnetic characteristics thereof
A single-crystal transparent ferromagnetic compound that transmits light and has significant ferromagnetic properties is selected from the group consisting of alkaline earth chalcogenides, alkali... |
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US20150203988 |
Silicon Ingot and Method of Manufacturing a Silicon Ingot
A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon... |
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US20150020728 |
METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER
The present invention provides a method for manufacturing a silicon single crystal wafer, wherein, under a growth condition that V/G≧1.05×(V/G)crt is achieved where V is a growth rate in growth of... |
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US20140373774 |
METHOD FOR CALCULATING A HEIGHT POSITION OF SILICON MELT SURFACE, METHOD FOR PULLING SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL PULLING APPARATUS
A method for calculating a height position of a silicon melt surface at the time of pulling a CZ silicon single crystal is disclosed, including: obtaining a first crystal diameter measured from a... |
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US20110146564 |
METHOD FOR DETECTING DIAMETER OF SINGLE CRYSTAL, SINGLE-CRYSTAL MANUFACTURING METHOD BY USING THE SAME AND SINGLE-CRYSTAL MANUFACTURING APPARATUS
A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method... |
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US20100024718 |
Procedure for in-situ determination of thermal gradients at the crystal growth front
A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with... |
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US20080257254 |
LARGE GRAIN, MULTI-CRYSTALLINE SEMICONDUCTOR INGOT FORMATION METHOD AND SYSTEM
Techniques for the formation of a large grain, multi-crystalline semiconductor ingot and include forming a silicon melt in a crucible, the crucible capable of locally controlling thermal gradients... |
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US20060005761 |
Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
The present invention provides a methods and system for producing semiconductor grade single crystals that are substantially free of undesirable agglomerated defects. A vacancy/interstial (V/I)... |
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US20090217866 |
METHOD FOR PRODUCING Si SINGLE CRYSTAL INGOT BY CZ METHOD
A Si single crystal having no defect region is stably grown by clearly detecting a type of a defect region or a defect free region of Si single crystal grown at a certain pulling rate profile and... |
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US20100263585 |
METHOD OF CONTROLLING SINGLE CRYSTAL DIAMETER
When pulling and growing a single crystal from a raw material melt by the Czochralski method, a boundary between the single crystal and the raw material melt is imaged by an optical sensor, and... |
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US20130047913 |
Method and Apparatus for Doping by Lane in a Multi-Lane Sheet Wafer Furnace
A method and apparatus for forming a sheet wafer add material to a crucible having a feed area and a dump area, and melt the material to form a wafer growth area between the feed area and the dump... |
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US20100024716 |
METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS
An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target... |
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US20100018454 |
Method of producing single crystal
After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber... |
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US20070277727 |
Melt surface position monitoring apparatus in silicon single crystal growth process
The liquid surface position of the melt in the crucible in the silicon single crystal growth process utilizing the Czochralski method is monitored using the melt surface position on the occasion... |
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US20090293800 |
Single crystal manufacturing apparatus and method
A Czochralski single crystal manufacturing apparatus uses multiple heaters to improve the controllability of crystal diameter. The power supplied to the multiple heaters is controlled so as to... |
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US20130263772 |
Method and apparatus for controlling melt temperature in a Czochralski grower
In a Czochralski process for growing single crystal silicon ingots, a system is provided for adding solid material to the liquid silicon during crystal growth for the purpose of directly... |
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US20100175611 |
METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL
In this method for manufacturing a silicon single crystal, when growing the silicon single crystal, in order to control the V/G value with high accuracy so as to yield a desired defect-free... |
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US20110214605 |
SINGLE-CRYSTAL MANUFACTURING METHOD AND SINGLE-CRYSTAL MANUFACTURING APPARATUS
The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single... |
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US20140326172 |
METHOD FOR EVALUATING SILICA GLASS CRUCIBLE, METHOD FOR PRODUCING SILICON SINGLE CRYSTALS
The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner.... |
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US20090064923 |
SILICON SINGLE CRYSTAL PULLING METHOD
An object of the present invention is to provide a silicon single crystal pulling method of accurately controlling the diameter of a silicon single crystal, thereby obtaining a high-quality... |
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US20100064964 |
METHOD FOR MEASURING DISTANCE BETWEEN LOWER END SURFACE OF HEAT INSULATING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR CONTROLLING THEREOF
There is provided in the present invention a method for measuring a distance between a lower end surface of a heat insulating member 14 and a surface of a raw material melt 4 when a silicon single... |
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US20090249995 |
Apparatus and method for producing single crystals
The present invention provides an apparatus for producing single crystals according to the Czochralski method, the apparatus including a chamber that can be divided into a plurality of chambers;... |
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US20060213424 |
Silicon wafer and process for the heat treatment of a silicon wafer
A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of... |
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US20150017086 |
SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURE THEREOF
A silicon single crystal manufacturing method includes: applying a transverse magnetic field to a melt of polysilicon with a carbon concentration of at most 1.0×1015 atoms/cm3 as a raw material;... |
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US20100031870 |
GENERATING A PUMPING FORCE IN A SILICON MELT BY APPLYING A TIME-VARYING MAGNETIC FIELD
Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is... |
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US20090255456 |
Method for evaluating metal contamination of silicon single crystal
When a silicon single crystal is grown by the CZ method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible, the voltage is applied under... |
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US20140030501 |
APPARATUS AND METHOD FOR THE PRODUCTION OF INGOTS
Apparatus and method for a crucible-less production of silicon ingots, wherein a support with a seed layer and a liquid layer is gradually lowered in a temperature field with a vertical gradient... |
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US20130263773 |
SILICON SINGLE CRYSTAL MANUFACTURING APPARATUS AND SILICON SINGLE CRYSTAL MANUFACTURING METHOD
The distance between the heat shield and the melt level of the melt can be regulated in a high precision. The real image includes at least the circular opening of the heat shield provided in such... |
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US20110114010 |
METHOD FOR MEASURING LIQUID LEVEL IN SINGLE CRYSTAL PULLING APPARATUS EMPLOYING CZ METHOD
Provided is a method for reliably and easily measuring a liquid level by selecting an optimal reflection method from among a plurality of reflection methods, depending on growing conditions of a... |
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US20110259260 |
SILICON SINGLE CRYSTAL PULL-UP APPARATUS AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL
A silicon single crystal pull-up apparatus is provided with a chamber into which an inert gas is introduced; a crucible that supports a silicon melt within the chamber; a heater that heats the... |
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US20100319611 |
Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
The present invention provides a method and apparatus for controlling the growth of a silicon ingot in which the diameter of the growing silicon ingot can be accurately measured. A camera captures... |
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US20170167048 |
SILICON SINGLE CRYSTAL GROWING APPARATUS AND SILOCON SINGLE CRYSTAL GROWING METHOD USING SAME
An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and... |