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US20080292524 |
Crucible for the Treatment of Molten Silicon
A crucible for the treatment of molten silicon includes a basic body with a bottom surface and lateral walls defining an inner volume. The basic body comprises at least 65% by weight of silicon... |
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US20140090592 |
CONTINUOUS SAPPHIRE GROWTH
Systems and methods for continuous sapphire growth are disclosed. One embodiment may take the form of a method including feeding a base material into a crucible located within a growth chamber,... |
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US20140352605 |
METHOD FOR MAKING BARIUM-DOPED CRUCIBLE AND CRUCIBLE MADE THEREBY
Making a barium-doped silica crucible includes forming a crucible by introducing into a rotating crucible mold bulk silica grains to form a bulky wall. After heating the interior of the mold to... |
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US20110048315 |
METHOD AND APPARATUS FOR VENTING GAS BETWEEN A CRUCIBLE AND A SUSCEPTOR
During a CZ or similar process, a silica crucible is held in a graphite or similar susceptor while being heated to above between about 1580 and 1620 degrees C. Vents or grooves formed in at least... |
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US20140083349 |
REMOVABLE THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES
A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for... |
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US20130174777 |
QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a... |
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US20120145964 |
Rare-Earth Oxyorthosilicate Scintillator Crystals and Method of Making Rare-Earth Oxyorthosilicate Scintillator Crystals
A method of making LSO scintillators with high light yield and short decay times is disclosed. In one arrangement, the method includes codoping LSO with cerium and another dopant from the IIA or... |
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US20110061587 |
METHOD OF PRODUCING PRETREATED METAL FLUORIDES AND FLUORIDE CRYSTALS
[Problem] To provide a method of producing a pretreated metal fluoride containing impurities such as oxygen in decreased amounts and a fluoride crystal containing impurities such as oxygen in... |
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US20130237402 |
SAPPHIRE MATERIAL AND PRODUCTION METHOD THEREOF
The present invention provides a method for manufacturing a corundum substance, comprising steps of providing a corundum crystal having an a-axis and a growth along the a-axis; and obtaining the... |
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US20050139148 |
Silicon purifying method, slag for purifying silicon and purified silicon
Method capable of preparing silicon having purity of about 6N applied to a solar cell efficiently at a low cost. Raw silicon containing boron and a slag are melted and a shaft is rotated by a... |
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US20110214604 |
UPPER HEATER FOR USE IN PRODUCTION OF SINGLE CRYSTAL, SINGLE CRYSTAL PRODUCTION EQUIPMENT, AND METHOD FOR PRODUCING SINGLE CRYSTAL
The present invention is directed to an upper heater for use in the production of a single crystal, the upper heater in which at least electrodes to which a current is supplied and a heat... |
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US20150075418 |
CRUCIBLES MADE WITH THE COLD FORM PROCESS
A crucible for growing crystals, the crucible being formed from Molybdenum and Rhenium. A crucible for growing crystals, the crucible being formed from a metal selected from Group V of the... |
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US20100050930 |
Crucible For A Crystal Pulling Apparatus
A single crystal pull apparatus has a multilayer crucible wherein the crucible has an outer crucible, an insertable layer intimately fitted thereon, and a wire frame positioned between the... |
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US20150240379 |
SILICON SINGLE CRYSTAL GROWING APPARATUS AND METHOD FOR GROWING SILICON SINGLE CRYSTAL
A silicon single crystal growing apparatus based on a Czochralski method arranges a graphite crucible inside a graphite heater for heating and a quartz crucible inside the graphite crucible and... |
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US20150044467 |
METHOD OF GROWING INGOT AND INGOT
Provided is a method of growing an ingot. The method of growing the ingot includes melting a silicon to prepare a silicon melt solution, preparing a seed crystal having a crystal orientation... |
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US20120015799 |
METHOD FOR PRODUCING SAPPHIRE SINGLE CRYSTAL, AND SAPPHIRE SINGLE CRYSTAL OBTAINED BY THE METHOD
A method for producing a sapphire single crystal, which includes: performing a sapphire single crystal growth step wherein a sapphire ingot, which is an ingot of sapphire single crystal, is... |
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US20090301386 |
Controlling Transport of Gas Borne Contaminants Across a Ribbon Surface
A method of growing a ribbon crystal provides a crucible containing molten material and passes string through the molten material to grow the ribbon crystal. The method further directs gas flow... |
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US20120260846 |
METHOD FOR FORMING BULK CRYSTALS, IN PARTICULAR MONOCRYSTALS OF FLUORIDES DOPED WITH RARE-EARTH IONS
A method for forming a bulk crystal from precursors in the molten state, of solidification and growth around a seed of a material having a defined crystalline structure, includes subjecting the... |
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US20130340671 |
SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL
A method for manufacturing a silica glass crucible, includes: preparing a crucible base material that is made of silica glass and has a crucible shape; fabricating a synthetic silica glass... |
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US20110315071 |
VITREOUS SILICA CRUCIBLE
The present invention provides a vitreous silica crucible which can restrain deterioration of crystallinity of a silicon ingot in multi-pulling. Provided is a vitreous silica crucible for pulling... |
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US20080308035 |
Removable Thermal Control for Ribbon Crystal Pulling Furnaces
A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for... |
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US20120217446 |
CRYSTAL MANUFACTURING
An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the... |
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US20110271897 |
GAS-LIFT PUMPS FOR FLOWING AND PURIFYING MOLTEN SILICON
The embodiments herein relate to a sheet production apparatus. A vessel is configured to hold a melt of a material and a cooling plate is disposed proximate the melt. This cooling plate configured... |
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US20120048083 |
HIGH THROUGHPUT SAPPHIRE CORE PRODUCTION
A method for producing growth-axis oriented single crystal sapphire cores or near-net cores is provided. According to the method, a boule is grown on a desired growth axis having a first axial end... |
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US20150104375 |
STARTING MATERIAL ALUMINA FOR PRODUCTION OF SAPPHIRE SINGLE CRYSTAL AND METHOD FOR PRODUCING SAPPHIRE SINGLE CRYSTAL
Disclosed is an alumina raw material for the production of a sapphire single crystal, which contains at least one element X selected from the group consisting of elements (1) to (3) shown below,... |
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US20140299046 |
METHOD FOR PRODUCING CRYSTAL
A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with... |
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US20110271898 |
SINGLE-CRYSTAL MANUFACTURING METHOD
The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material... |
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US20110189325 |
Process and technical arrangement to produce in series single crystal penetrator rods of an alloy of 40wt% tungsten-40wt% titanium-20wt% osmium to replace depleted uranium which causes after use hazardous environmental problems
A new process and technical arrangement to produce in series penetrator rods which have a true single crystal structure consisting of an alloy of 40% by weight Tungsten, 40% by weight Titanium,... |
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US20140017479 |
METHOD OF FORMING AN R-PLANE SAPPHIRE CRYSTAL
A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single... |
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US20100095880 |
Arc melting high-purity carbon electrode and application thereof
An arc melting high-purity carbon electrode is capable of forming stable arc at the time of arc discharge, and it is possible to produce a vitreous silica crucible with good properties, which does... |
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US20130125719 |
PROCESSES FOR PRODUCING SILICON INGOTS
Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to... |
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US20110192342 |
Method Of Manufacturing Dislocation-Free Single-Crystal Silicon By Czochralski Method
Dislocation-free single-crystal silicon is manufactured by the Czochralski method, wherein silicon which does not contain particles with an average particle diameter smaller than 250 μm, is used... |
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US20130133567 |
SYSTEMS AND PROCESSES FOR CONTINUOUS GROWING OF INGOTS
An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an... |
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US20110143091 |
GERMANIUM INGOTS/WAFERS HAVING LOW MICRO-PIT DENSITY (MPD) AS WELL AS SYSTEMS AND METHODS FOR MANUFACTURING SAME
Systems and methods are disclosed for crystal growth including features of reducing micropit cavity density in grown germanium crystals. In one exemplary implementation, there is provided a method... |
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US20110195251 |
Method For Pulling A Single Crystal Composed Of Silicon From A Melt Contained In A Crucible, and Single Crystal Produced Thereby
Silicon single crystals are pulled from a melt in a crucible, the single crystal surrounded by a heat shield, the lower end of which is a distance h from the melt surface, wherein gas flows... |
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US20080029019 |
Method For Producing Directionally Solidified Silicon Ingots
The present invention relates to a method for the production of directionally solidified Czochralski, float zone or multicrystalline silicon ingots or thin sheets or ribbon for making wafers for... |
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US20120282426 |
RESISTANCE HEATED SAPPHIRE SINGLE CRYSTAL INGOT GROWER, METHOD OF MANUFACTURING RESISTANCE HEATED SAPPHIRE SNGLE CRYSTAL INGOT, SAPPHIRE SNGLE CRYSTAL INGOT, AND SAPPHIRE WAFER
Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire... |
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US20150115168 |
Metal Fluoride Crystal, Light Emitting Element, Scintillator, Method of Detecting Neutron, and Method of Producing Metal Fluoride Crystal
A light emitting element according to one embodiment of the present invention is configured of a metal fluoride crystal which is represented by chemical formula LiM1M2F6 (wherein Li includes 6Li;... |
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US20100031869 |
System for Manufacturing Silicon Single Crystal and Method for Manufacturing Silicon Single Crystal Using this System
The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined... |
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US20070169684 |
Methods and Apparatuses for Manufacturing Monocrystalline Cast Silicon and Monocrystalline Cast Silicon Bodies for Photovoltaics
Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that... |
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US20140015108 |
METHOD OF MANUFACTURING SINGLE CRYSTAL INGOT, AND SINGLE CRYSTAL INGOT AND WAFER MANUFACTURED THEREBY
A method of manufacturing a single crystal ingot, and a single crystal ingot and a wafer manufactured thereby are provided. The method of manufacturing a single crystal ingot according to an... |
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US20070243125 |
SYNERGISTICALLY DOPED POTASSIUM NIOBATE
The present invention provides a photorefractive potassium niobate (KNbO3) crystal including a first impurity added substitutionally to the niobium (Nb) site and a second impurity added... |
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US20140007807 |
METHOD FOR PRODUCING SIC SINGLE CRYSTALS AND PRODUCTION DEVICE
Provided is a method for producing SiC single crystals while maintaining a temperature gradient such that the temperature decreases from within an Si solution inside a graphite crucible toward the... |
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US20110247547 |
PROCESS FOR PRODUCING SINGLE-CRYSTAL SAPPHIRE
Following steps are implemented: a melting step in which aluminum oxide within a crucible placed in a chamber is melted to obtain an aluminum melt; a shoulder-portion formation step in which a... |
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US20150259824 |
APPARATUS AND METHODS FOR MANUFACTURING INGOT
There is disclosed an ingot manufacture method to grow a first ingot from molten silicon in a crucible, the ingot manufacture method including growing at least a portion of the first ingot in a... |
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US20120006254 |
QUARTZ GLASS CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON AND PROCESS FOR PRODUCING SINGLE-CRYSTAL SILICON
The invention provides a quartz glass crucible for pulling up single-crystal silicon, and a method for producing single-crystal silicon by using it. The quartz glass crucible is characterized by... |
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US20100319609 |
VITREOUS SILICA CRUCIBLE, METHOD OF MANUFACTURING THE SAME, AND USE THEREOF
A vitreous silica crucible for pulling single-crystal silicon, in which the vibration of a melt surface at the initial stage of the pulling of single-crystal silicon can be suppressed, a shoulder... |
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US20140144372 |
Weir For Improved Crystal Growth in A Continuous Czochralski Process
An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the... |
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US20090038537 |
METHOD OF PULLING UP SILICON SINGLE CRYSTAL
A method of pulling up a silicon single crystal is provided in which a variation rate of a neck diameter is controlled to be within a predetermined range, and a dislocation in a neck is... |
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US20110056428 |
METHOD OF PRODUCING SINGLE CRYSTAL SILICON
The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring,... |