Matches 1 - 38 out of 38


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US20090050050 DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS  
Single-crystal materials are fabricated from a melt at temperatures below their melting points.
US20070234946 Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals  
A method for growing gallium nitride (GaN) crystals in supercritical ammonia using an autoclave is disclosed. Large surface area GaN crystals are created, which may include calcium, magnesium or...
US20120080645 Suppression Of Crystal Growth Instabilities During Production Of Rare-Earth Oxyorthosilicate Crystals  
Disclosed are a method of growing a rare-earth oxyorthosilicate crystal and a crystal grown using the method. A melt is prepared by melting a first substance including at least one rare-earth...
US20110147589 ROOM TEMPERATURE ALUMINUM ANTIMONIDE RADIATION DETECTOR AND METHODS THEREOF  
In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal...
US20060086310 Production of high grade silicon, reactor, particle recapture tower and use of the aforementioned  
Solar Grade Silicon is produced by decomposition of a silicon precursor, preferably trichlorosilane, in the presence of an excess of hydrogen gas, where the reactant are introduced in a reaction...
US20070110657 Unseeded silicon carbide single crystals  
High volumes of relatively large, single crystals of silicon carbide are grown in a reactor from a point source, i.e., unseeded growth. The crystals may be grown colorless or near colorless and...
US20110026103 CRYSTAL FOR OPTICAL CONVERSION  
An efficient broadband crystal for wavelength conversion, the crystal being a quasi-phase matched non-linear crystal, having an aperiodic poled structure, each period being tuned, and wherein said...
US20110134509 WAVELENGTH CONVERSION ELEMENT AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION ELEMENT  
A wavelength conversion element having an improved property-maintaining life and a method for manufacturing the wavelength conversion element are provided. A wavelength conversion element 10a has...
US20110100291 PLANT AND METHOD FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES  
A method of operating a high pressure system for growth of gallium nitride containing materials. The method comprises providing a high pressure apparatus comprising a growth region and feedstock...
US20100066388 EPITAXIAL SOOT SENSOR  
A soot sensor has a soot-sensitive noble-metal structure formed as strip conductor sections on an electrically insulating carrier, whose strip conductor sections are between 5 and 100 μm wide and...
US20090293803 Method of growing silicon single crystals  
By providing a length of not less than 100 mm to a tail portion to be formed following the cylindrical body portion in growing silicon single crystals having a cylindrical body portion with a...
US20050022721 Acentric, rhombohedral lanthanide borate crystals, method for making, and applications thereof  
Acentric lanthanide borate crystals having the general formula LnBO3, wherein Ln is Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or Y, are disclosed along with a hydrothermal method for forming...
US20110128610 PHENOLIC CONFIGURATIONALLY LOCKED POLYENE BULK SINGLE CRYSTALS, CRYSTALLINE THIN FILMS AND WAVEGUIDES FOR ELECTRO-OPTICS AND THZ-WAVE APPLICATIONS  
The invention concerns Phenolic Configurationally Locked Polyene Single Crystals, which are especially suited as highly efficient nonlinear optical organic material. The invention also concerns...
US20090301388 CAPSULE FOR HIGH PRESSURE PROCESSING AND METHOD OF USE FOR SUPERCRITICAL FLUIDS  
An improved capsule for processing materials or growing crystals in supercritical fluids. The capsule is scalable up to very large volumes and is cost effective according to a preferred...
US20060048697 Monitoring and control of a fabrication process  
A system (10) for monitoring and controlling a fabrication process includes at least a first subsystem (12), a crystallographic analysis subsystem (14), and a second subsystem (16), wherein the...
US20070287194 Screening For Solid Forms By Ultrasound Crystallization And Cocrystallization Using Ultrasound  
The present disclosure relates to crystallizing a chemical substance(s) using ultrasound. Methods are provided for screening a chemical substance according to its solid forms by using ultrasound...
US20070204790 Solvents and new method for the synthesis of cdse semiconductor nanocrystals  
New methods for the synthesis of nanocrystals/quantum dots are disclosed. The methods comprise use of reasonably-priced and commercially available heat transfer fluids (such as Dowtherm® A) as...
US20080168942 Liquid transportation and crystallization growth  
A device for transporting liquids and supporting crystal growth comprises a hollow space (20) in a body (1) with a first side. The hollow space comprises at least a first orifice (9) and is being...
US20110232564 METHOD OF GROWING GALLIUM NITRIDE CRYSTAL AND METHOD OF MANUFACTURING GALLIUM NITRIDE CRYSTAL  
In a method of growing GaN crystal in one aspect, the following steps are performed. An underlying substrate is prepared. Then, a mask layer having an opening portion and composed of SiO2 is...
US20130236388 BROAD-EMISSION NANOCRYSTALS AND METHODS OF MAKING AND USING SAME  
In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to...
US20100207029 SINGLE CRYSTAL SCINTILLATOR MATERIAL AND METHOD FOR PRODUCING THE SAME  
A single crystal scintillator material according to the present invention includes a single crystal portion that is represented by the compositional formula (CexLu1-x)BO3 in which the mole...
US20070193500 Method for manufacturing single crystal semiconductor  
A method for manufacturing a single crystal semiconductor, in which, in a process of pulling up the single crystal semiconductor from melt for growing it, an impurity is incorporated more...
US20090223439 Apparatuses and Methods for Growing Single Crystals  
In some embodiments, an apparatus configured to grow a single crystal includes a support configured to carry the single crystal. The support includes an end portion having variable widths along a...
US20080095686 Magnetic Garnet Single Crystal and Optical Element Using Same as Well as Method of Producing Single Crystal  
[Problem] The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of...
US20120160153 APPARATUS AND METHOD FOR PRODUCTION OF SiC SINGLE CRYSTAL  
To suppress 3D or convex growth and ensure a high flatness, an apparatus for producing an SiC single crystal includes: a container which holds an SiC solution, a portion for maintaining the...
US20070289491 METHOD OF PREPARING SEMICONDUCTOR NANOCRYSTAL COMPOSITIONS  
A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the...
US20140119981 CONSTRUCTING BISMUTH ANTIMONY THIN FILMS WITH ANISOTROPIC SINGLE-DIRAC CONES  
A Bi1-xSbx thin film is provided that includes a Dirac-cone with different degrees of anisotropy in their electronic band structure by controlling the stoichiometry, film thickness, and growth...
US20080022921 Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device  
A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a...
US20050217560 Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same  
The crystal orientations of monocrystalline semiconductor wafers may be varied by four parameters. The first parameter is the type of crystal seed used to grow the monocrystalline semiconductor...
US20090266294 METHOD AND DEVICE FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL GROWING APPARATUS  
A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon...
US20070113866 Method for cleaning a surface of a photomask  
A method of cleaning a surface of a photomask includes placing the photomask in a vessel, which is held under an elevated pressure and feeding a supercritical fluid, in particular, CO2 in a...
US20080090072 Aligned crystalline semiconducting film on a glass substrate and method of making  
A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750° C. The structure includes a nucleation layer formed...
US20070261633 GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device  
In a GaN crystal substrate, a rear surface opposite-to a crystal growth surface can have a warpage w(R) satisfying −50 μm≦w(R)≦50 μm, a surface roughness Ra(R) satisfying Ra(R)≦10 μm, and a...
US20110226324 System for the Production of Single Crystal Semiconductors and Solar Panels Using the Single Crystal Semiconductors  
A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single...
US20110036395 METHODS FOR FORMING NANOSTRUCTURES AND PHOTOVOLTAIC CELLS IMPLEMENTING SAME  
A method for creating a nanostructure according to one embodiment includes depositing material in a template for forming an array of nanocables; removing only a portion of the template such that...
US20150037926 Apparatus and Methods for Continuous Flow Synthesis of Semiconductor Nanowires  
Apparatuses and methods for synthesizing nanoscale materials are provided, including semiconductor nanowires. Precursor solutions include mixed reagent precursor solutions of metal and...
US20120025146 II-III-N SEMICONDUCTOR NANOPARTICLES AND METHOD OF MAKING SAME  
The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the...
US20100301358 Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor  
The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III...

Matches 1 - 38 out of 38