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US20120098102 DEFECT REDUCTION OF NON-POLAR AND SEMI-POLAR III-NITRIDES WITH SIDEWALL LATERAL EPITAXIAL OVERGROWTH (SLEO)  
A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial...
US20110195185 SiGe Matrix Nanocomposite Materials with an Improved Thermoelectric Figure of Merit  
Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion...
US20070235653 Manufacture of Cadmium Mercury Telluride on Patterned Silicon  
This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the...
US20120025195 Confined Lateral Growth of Crystalline Material  
In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the...
US20130313603 Wavelength Converter for an LED, Method of Making, and LED Containing Same  
A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An...
US20110064103 SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE  
A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for...
US20090114887 Bulk, free-standing cubic III-N substrate and a method for forming same.  
A method of forming a bulk, free-standing cubic III-N substrate including a) growing epitaxial III-N material on a cubic III-V substrate using molecular beam epitaxy (MBE); and b) removing the...
US20110262773 Ammonothermal Method for Growth of Bulk Gallium Nitride  
A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of...
US20060124051 Zinc oxide single crystal  
An objective of the present invention is to provide a zinc oxide (ZnO) single crystal whose electroconductivity is excellent and which has a high quality. The invention relates to a zinc oxide...
US20120177902 Multiferroics that are both ferroelectric and ferromagnetic at room temperature  
Multiferroic articles including highly resistive, strongly ferromagnetic strained thin films of BiFe0.5Mn0.5O3 (“BFMO”) on (001) strontium titanate and Nb-doped strontium titanate substrates were...
US20110312164 FORMING AN ELECTRODE HAVING REDUCED CORROSION AND WATER DECOMPOSITION ON SURFACE USING A CUSTOM OXIDE LAYER  
The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The...
US20110030611 METHOD FOR PREPARING POLYCRYSTALS AND SINGLE CRYSTALS OF ZINC OXIDE (ZnO) ON A SEED BY CHEMICALLY ACTIVATED SUBLIMATION AT HIGH TEMPERATURE AND DEVICE FOR CARRYING OUT SAID METHOD  
A method for preparing polycrystalline or single-crystal zinc oxide ZnO on a seed placed in an enclosure under a controlled atmosphere, by sublimation of a zinc oxide source placed in a crucible...
US20140217554 CRYSTAL LAMINATE STRUCTURE AND METHOD FOR PRODUCING SAME  
A crystal laminate structure, in which crystals can be epitaxially grown on a β-Ga2O3-based substrate with high efficiency to produce a high-quality β-Ga2O3-based crystal film on the substrate;...
US20100301420 HIGH-K HETEROSTRUCTURE  
A method for preparing a multilayer substrate includes the step of deposing an epitaxial γ-Al2O3 Miller index (001) layer on a Si Miller index (001) substrate.
US20150118572 SOLID-STATE BATTERY AND METHODS OF FABRICATION  
The present disclosure generally provides for a solid-state battery, and methods of fabricating embodiments of the solid-state battery. Embodiments of the present disclosure may include an...
US20090301390 APPARATUS FOR EVAPORATION, A CRUCIBLE FOR EVAPORATION AND A METHOD OF GROWING A FILM ON A SUBSTRATE  
The present invention relates to an apparatus for evaporation comprising a vacuum chamber, a substrate stage defining a substrate plane and at least one effusion cell, the effusion cell comprising...
US20140239307 REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE  
A rare earth oxide gate dielectric on III-N material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating...
US20130333611 LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE  
A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element....
US20110094668 SUBSTRATE WITH DETERMINATE THERMAL EXPANSION COEFFICIENT  
A process for reducing defects during formation of a transfer layer on a composite support having a central layer with a first thermal expansion coefficient. The method includes providing the...
US20140308590 SOLID POLYMER ELECTROLYTE, METHOD OF PREPARING SOLID POLYMER ELECTROLYTE AND ELECTROCHEMICAL DEVICE  
Provided is a solid electrolyte including an epitaxial thin film crystal made of an electrolyte containing at least lithium.
US20150014676 III-N MATERIAL GROWN ON REN EPITAXIAL BUFFER ON Si SUBSTRATE  
A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal...
US20110089537 GROWING PROCESS FOR GROUP III NITRIDE ELEMENTS  
The disclosure relates to a method for growing an element III nitride, wherein the growth is carried out on a substrate made of a material capable of maintaining the same crystalline structure...
US20120045661 RARE-EARTH-DOPED ALUMINUM-GALLIUM-OXIDE FILMS IN THE CORUNDUM-PHASE AND RELATED METHODS  
The invention provides a means for preparing rare-earth-doped α-(Al1-xGax)2O3 films by molecular beam epitaxy (MBE). The invention provides a composition of matter, rare-earth-doped...
US20120040273 PROTON CONDUCTIVE INORGANIC THIN FILM, METHOD OF FORMING THE SAME, AND FUEL CELL INCLUDING THE PROTON CONDUCTIVE INORGANIC THIN FILM  
A proton-conductive inorganic thin film including an inorganic proton conductor, a method of forming the proton-conductive inorganic thin film, and a fuel cell including the proton-conductive...
US20140158943 MECHANICAL PROCESS FOR CREATING PARTICLES IN A FLUID  
A method of producing at least one of microscopic and submicroscopic particles includes providing a template that has a plurality of discrete surface portions, each discrete surface portion having...
US20110300694 ELECTRODE CIRCUIT, FILM FORMATION DEVICE, ELECTRODE UNIT, AND FILM FORMATION METHOD  
An electrode circuit for plasma CVD includes: an alternating-current source; a matching circuit that is connected to the alternating-current source; and parallel plate electrodes that are...
US20140212671 Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation of Graphene Heterostructures  
Growth of single- and few-layer macroscopically continuous graphene films on Co3O4(111) by molecular beam epitaxy (MBE) has been characterized using low energy electron diffraction (LEED), Auger...
US20130240876 Non-polar plane of wurtzite structure material  
The present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide...
US20130177995 HIGHLY EPITAXIAL THIN FILMS FOR HIGH TEMPERATURE/HIGHLY SENSITIVE CHEMICAL SENSORS FOR CRITICAL AND REDUCING ENVIRONMENT  
An oxygen sensor includes an epitaxial oxide thin film double perovskite oxygen sensor formed on a single crystal oxide substrate. The thin film includes a lanthanide element, barium, cobalt, and...
US20140331919 METHOD FOR PRODUCING GA2O3 CRYSTAL FILM  
A Ga2O3 crystal film is epitaxially grown on a Ga2O3 crystal substrate using an MBE method, while controlling the n-type conductivity with high accuracy. Provided is a method for producing a Ga2O3...
US20140230724 METHOD FOR FORMING MAGNESIUM OXIDE THIN FILM AND PROCESSED PLATE  
A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat...
US20110062394 RARE EARTH-DOPED SAPPHIRE FILMS AND RELATED METHODS  
The present invention relates to the growth of single phase rare earth-doped sapphire (α-Al2O3) films on substrates by molecular beam epitaxy. The invention provides for composition of matters,...
US20110039071 METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF MANUFACTURING AN EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv SUBSTRATE, AND EPITAXIAL WAFER  
There are provided a method for manufacturing a Si(1-v-w-x)CwAlxNv substrate having a reduced number of cracks and high processibility, a method for manufacturing an epitaxial wafer, a...
US20060054079 Forming structures by laser deposition  
A method of forming at least a part of a single crystal component (34) comprising a base material, the method comprises the steps of; directing a flow of base material (24) at a first location...
US20070006802 N-TYPE BULK SINGLE CRYSTAL ZINC OXIDE  
A ZnO bulk single crystal of the invention has n-type conductivity with a maximum resistivity of one (1) ohm-centimeter (Ω-cm). N-type conductivity is achieved through introduction of dopants in...
US20120260851 METHOD OF MANUFACTURING TRANSPARENT OXIDE THIN FILM  
A method of manufacturing a zinc oxide-based thin film for a transparent electrode and a zinc oxide-based thin film manufactured using the method, in which both conductivity and transmittance can...
US20090294775 HEXAGONAL WURTZITE TYPE EPITAXIAL LAYER POSSESSING A LOW ALKALI-METAL CONCENTRATION AND METHOD OF CREATING THE SAME  
A method of obtaining a hexagonal würtzite type epitaxial layer with a low impurity concentration of alkali-metal by using a hexagonal würtzite substrate possessing a higher impurity concentration...
US20110312176 FORMING AN ELECTRODE HAVING REDUCED CORROSION AND WATER DECOMPOSITION ON SURFACE USING AN ORGANIC PROTECTIVE LAYER  
Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer...
US20100080256 HIGH PERFORMANCE ZnO-BASED LASER DIODES  
Systems and methods for electrically pumped, surface-emitting and edge emitting ZnO ultraviolet diode lasers are disclosed. The ZnO diode laser may be fabricated using growth processes (e.g., MBE)...
US20110089431 COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME  
A method for producing a compound single crystal includes a process (I) of growing the compound single crystal while causing an anti-phase boundary and a stacking fault to equivalently occur in a...
US20090084310 Method for manufacturing single crystal nano-structures capable of controlling morphology and device for manufacturing nano-structures  
The present invention discloses a method for manufacturing single crystal nano-structures capable of controlling morphology so as to allow materials with various morphologies to form...
US20110239932 Method for reducing defects in epitaxially grown on the group III-nitride materials  
The present invention discloses a method to grow group III-nitride materials on a non-native substrate with much reduced threading dislocation (TD) density and smooth surface by using MBE. The...
US20140245947 METHODS OF PRODUCING LARGE GRAIN OR SINGLE CRYSTAL FILMS  
Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these...
US20100193664 Seed Layers and Process of Manufacturing Seed Layers  
This invention relates seed layers and a process of manufacturing seed layers for casting silicon suitable for use in solar cells or solar modules. The process includes the step of positioning...
US20110233513 ENHANCED BONDING INTERFACES ON CARBON-BASED MATERIALS FOR NANOELECTRONIC DEVICES  
Semiconductor structures and electronic devices are provided that includes at least one layer of an interfacial dielectric material located on an upper surface of a carbon-based material. The at...
US20100229788 THREE-DIMENSIONAL GAN EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREOF  
A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An...
US20110319271 Multifilament Superconductor Having Reduced AC Losses and Method for Forming the Same  
A high temperature superconductor structure including: a substrate on which at least one buffer layer is deposited, a superconductor layer on the buffer layer, the superconducting layer composed...
US20090283029 ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION  
Methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial...
US20060236923 Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer  
A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy...
US20080017100 Method for fabricating single-crystal GaN based substrate  
A GaN based substrate is obtained with a simple etching. The GaN based substrate is separate from another base substrate with the etching. The whole process is easy and costs low. The substrate is...
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