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        <title>Free Patents Online: Static information storage and retrieval</title>
        <link>http://www.freepatentsonline.com./rssfeed/rsspat365.xml</link>
        <description>USPTO Class 365 Static information storage and retrieval</description>
        <language>en-us</language>
        <lastBuildDate>Tue, 15 Dec 2009 08:00:00 EST</lastBuildDate>
        <item>
            <title><![CDATA[Data storage means]]></title>
            <link>http://www.freepatentsonline.com./7634784.html</link>
            <description><![CDATA[Apparatus in accordance with at least one embodiment of the present invention includes a data storage cartridge and/or a receiver configured to receive the cartridge in facilitation of data transfer to and/or from the cartridge. The cartridge and the receiver each include respective connector portions configured to connect when the cartridge is inserted into the receiver. The cartridge and/or the receiver also include guide features configured to facilitate alignment of the connector portions for connection as the cartridge is inserted into the receiver.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Test apparatus and selection apparatus]]></title>
            <link>http://www.freepatentsonline.com./7634695.html</link>
            <description><![CDATA[There is provided a test apparatus for testing a memory under test that includes therein a plurality of blocks and one or more repairing columns. The test apparatus includes a testing section, a flag memory that stores thereon a flag indicating whether each column is defective, a counter memory that stores thereon the number of defective blocks in association with each column, a failure writing section that writes a flag indicating that a column is defective into the flag memory under a condition that one of the following conditions is satisfied: when a test result indicates that the column is defective; and when a flag stored on the flag memory in association with the column indicates that the column is defective, a counting section that increments the number of defective blocks stored on the counter memory in association with the column under a condition that the test result indicates that the column is defective and the flag indicating that the column is defective is not stored on the flag memory in association with the column, and a selecting section that selects columns to be replaced with the repairing columns based on the number of defective blocks stored in association with each column.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Storing authentication information in a content unit on an object addressable storage system]]></title>
            <link>http://www.freepatentsonline.com./7634630.html</link>
            <description><![CDATA[Aspects of the invention relate to sharing content stored on an object addressable storage (OAS) system among a plurality of users of the OAS system and authenticating users to an OAS system. In some embodiments, a user may store content units on the OAS system and control access by other users to these content units. In some embodiments, when a user grants one or more other users access to a content unit stored on the OAS system, the OAS system may send a notification of grant of access to the other user(s).]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Method and apparatus for self-timed data ordering for multi-data rate memories and system incorporating same]]></title>
            <link>http://www.freepatentsonline.com./7634623.html</link>
            <description><![CDATA[A self-timed data ordering method and circuit for multi-data rate memories orders a plurality of data words substantially simultaneously retrieved during successive read operations of a memory device. A data word ordering designator is stored from each of the successive read operations and managed in a first-in first-out manner. The data word ordering designator configures ordering circuitry for the desired ordering of the plurality of data words simultaneously retrieved. Following the ordering of the plurality of data words, the properly ordered data words are latched in their desired order for subsequent delivery. Once the properly ordered data words are latched, the ordering circuitry is reconfigured according to the next oldest data word ordering designator. The data word ordering designator retains the pipelined ordering of the corresponding read operations to the corresponding memory banks of the memory device.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Method of recording and reproducing information]]></title>
            <link>http://www.freepatentsonline.com./7634612.html</link>
            <description><![CDATA[A method of recording and reproducing information is provided in which a recording area of a memory card is physically divided into small pages and is also partitioned into physical blocks each having a plurality of the pages so that information recorded in the page is erased in units of each block having the page. When an FAT area where information is changed frequently is allocated to a certain block, the FAT area is allocated to a page or pages in the block, and the remaining pages in the same block are made unavailable although they are unused.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Multiple string searching using content addressable memory]]></title>
            <link>http://www.freepatentsonline.com./7634500.html</link>
            <description><![CDATA[A method and apparatus for multiple string searching using a ternary content addressable memory. For one embodiment, the method includes receiving a text string having a plurality of characters and performing an unanchored search of a database of a stored patterns matching one or more characters of the text string using a state machine, wherein the state machine comprises a ternary content addressable memory (CAM) and wherein the performing comprises comparing a state and one of the plurality of characters with contents of a state field and a character field, respectively, stored in the ternary CAM. In various embodiments, one or more of the following search features may be supported: exact string matching, inexact string matching, single character wildcard matching, multiple character wildcard matching, case insensitive matching, parallel matching and rollback.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Semiconductor memory device]]></title>
            <link>http://www.freepatentsonline.com./7633833.html</link>
            <description><![CDATA[The semiconductor memory device according to the invention is provided with a first delay circuit block that generates a timing signal of a circuit block to be operated in column cycle time determined by an external input command cycle and a second delay circuit block the whole delay of which is controlled to be a difference between access time determined by an external clock and the latency and column cycle time. These delay circuit blocks are controlled so that the delay of each delay circuit is a suitable value in accordance with column latency and an operating frequency, and each delay is controlled corresponding to dispersion in a process and operating voltage and a change of operating temperature.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Circuit for outputting data of semiconductor memory apparatus]]></title>
            <link>http://www.freepatentsonline.com./7633832.html</link>
            <description><![CDATA[A circuit for outputting data of a semiconductor memory apparatus is provided. A circuit for outputting data of a semiconductor memory apparatus according to an embodiment of the present invention includes a data clock generating unit that generates a data clock, a delayed clock generating unit that receives the data clock and outputs a delayed clock according to a change in an external voltage level, and a clock synchronizing unit that outputs data synchronized with the delayed clock as output data.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Semiconductor memory and operating method of same]]></title>
            <link>http://www.freepatentsonline.com./7633831.html</link>
            <description><![CDATA[An operation control circuit carries out a first access operation upon receipt of a first access command during activation of a chip enable signal, and carries out a second access operation accessing a memory core in a shorter time than the first access operation, upon receipt of the next access command during activation of the chip enable signal. For this reason, two types of access operations whose access times differ can be carried out by receiving the same access command at the same access terminal. A dedicated terminal for distinguishing between the two types of operations does not need to be formed in a controller, etc., which accesses a semiconductor memory. Selective use of the first and second access operations improves the operation efficiency of the semiconductor memory. Consequently, the operation efficiency of the semiconductor memory can be improved without increasing the cost of a system incorporating the semiconductor memory.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Reduced leakage driver circuit and memory device employing same]]></title>
            <link>http://www.freepatentsonline.com./7633830.html</link>
            <description><![CDATA[A row line driver circuit for use in a memory array including multiple memory cells and multiple row lines coupled to the memory cells for selectively accessing the memory cells includes an output stage adapted for connection to a corresponding one of the row lines and a control circuit connected to the output stage. The output stage is operative during an active phase of a given memory cycle to drive the corresponding row line to a potential as a function of at least one address signal received by the driver circuit. The control circuit is operative to generate at least one control signal for disabling the output stage at least during an inactive phase of the memory cycle to thereby substantially eliminate a leakage current path in the driver circuit.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders]]></title>
            <link>http://www.freepatentsonline.com./7633829.html</link>
            <description><![CDATA[A memory array comprising array lines of first and second types coupled to memory cells includes a first hierarchical decoder circuit for decoding address information and selecting one or more array lines of the first type. The first hierarchical decoder circuit includes at least two hierarchical levels of multi-headed decoder circuits. The first hierarchical decoder circuit may include a first-level decoder circuit for decoding a plurality of address signal inputs and generating a plurality of first-level decoded outputs, a plurality of second-level multi-headed decoder circuits, each respective one coupled to a respective first-level decoded output, each for providing a respective plurality of second-level decoded outputs, and a plurality of third-level multi-headed decoder circuits, each respective one coupled to a respective second-level decoded output, each for providing a respective plurality of third-level decoded outputs coupled to the memory array.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Hierarchical bit line bias bus for block selectable memory array]]></title>
            <link>http://www.freepatentsonline.com./7633828.html</link>
            <description><![CDATA[Circuits and methods are described for decoding exemplary memory arrays of programmable and, in some embodiments, re-writable passive element memory cells, which are particularly useful for extremely dense three-dimensional memory arrays having more than one memory plane. In addition, circuits and methods are described for selecting one or more array blocks of such a memory array, for selecting one or more word lines and bit lines within selected array blocks, for conveying data information to and from selected memory cells within selected array blocks, and for conveying unselected bias conditions to unselected array blocks.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Semiconductor memory device, operational processing device and storage system]]></title>
            <link>http://www.freepatentsonline.com./7633827.html</link>
            <description><![CDATA[A thin film magnetic memory includes a size-variable Read Only Memory (ROM) region and a size-variable Random Access Memory (RAM) coupled to different ports for parallel access to the ports, respectively. A memory system allowing fast and efficient data transfer can be achieved.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used]]></title>
            <link>http://www.freepatentsonline.com./7633826.html</link>
            <description><![CDATA[A semiconductor device of this invention includes a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage, a second circuit for controlling the output from the first circuit by activation or deactivation, and an activation control circuit for activating or deactivating the second circuit in accordance with external input.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Semiconductor memory device with reduced current consumption]]></title>
            <link>http://www.freepatentsonline.com./7633825.html</link>
            <description><![CDATA[A semiconductor memory device includes a DRAM memory core circuit including a word line, a power supply circuit configured to operate in a selected one of a first state and a second state to generate a predetermined power supply voltage for provision to the DRAM memory core circuit, the power supply circuit consuming a larger electric current in the first state than in the second state, and a control circuit configured to control the power supply circuit such that the power supply circuit is shifted from the first state to the second state, and is then brought back to the first state during a period from activation of the word line to deactivation of the word line.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Charge pump to supply voltage bands]]></title>
            <link>http://www.freepatentsonline.com./7633824.html</link>
            <description><![CDATA[The present invention provides a voltage generating circuit and a control method thereof which is capable of preventing an increase in the occupied area and suitable for raising the voltage of the power supply in a wide range.  This voltage generating circuit comprises a first charge pump unit to which a first clock signal is inputted, wherein the first charge pump unit generates a voltage by pumping a voltage of a first external power supply in stages by a first voltage, a voltage selector that selects the voltage generated by the first charge pump unit or a voltage of a second external power supply in accordance with a voltage selection command signal, a level converter that converts a voltage level of the first clock signal into a second voltage level, and a second charge pump unit to which the second clock signal that has been converted by the level converter is inputted, wherein the second charge pump unit and that generates a voltage and by pumping the selected voltage or the voltage of the second external power supply.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Circuit and method for controlling sense amplifier of a semiconductor memory apparatus]]></title>
            <link>http://www.freepatentsonline.com./7633822.html</link>
            <description><![CDATA[A sense amplifier control unit include: a control unit that detects a variation in the level of an external voltage and outputs a delay time selection signal on the basis of the result of the detection. A variable delay unit delays an active signal by a delay time corresponding to the delay time selection signal and outputs the delayed signal. A driving signal generating unit outputs a driving signal according to the output of the variable delay unit. A sense amplifier driver drives a sense amplifier on the basis of the driving signal.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Current mode memory apparatus, systems, and methods]]></title>
            <link>http://www.freepatentsonline.com./7633821.html</link>
            <description><![CDATA[Some embodiments include a first circuit to receive input signals and to drive signals at first circuit output nodes, and a second circuit to receive at least a portion of current passing through the first circuit output nodes and to generate output signals at second circuit output nodes, the second circuit including a pair of transistors coupled to the second circuit output nodes with gates of the pair of transistors to receive different signals to affect a value of a voltage difference between the output signals, the different signals being different from the output signals. Other embodiments including additional apparatus, systems, and methods are disclosed.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Current limit circuit and semiconductor memory device]]></title>
            <link>http://www.freepatentsonline.com./7633820.html</link>
            <description><![CDATA[A current limit circuit comprising: a current limit element for limiting an output current level to within a predetermined range of a limiting current and including a first PMOS transistor having a source to which a predetermined voltage is applied and a drain through which the output current is supplied; and a gate voltage generating circuit for generating a gate voltage by a feedback control such that a difference between the predetermined voltage and a gate voltage of the first PMOS transistor coincides with a threshold voltage of a second PMOS transistor having approximately the same characteristic as that of the first PMOS transistor in a state in which a predetermined current is flowing through the second PMOS transistor.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Determining history state of data in data retaining device based on state of partially depleted silicon-on-insulator]]></title>
            <link>http://www.freepatentsonline.com./7633819.html</link>
            <description><![CDATA[A system, method and program product for determining a history state of data in a data retaining device are disclosed. A state of a partially-depleted silicon-on-insulator (PD SOI) device coupled to a data retaining device is measured to indicate a body voltage of the PD SOI device. The body voltage of the PD SOI device may indicate, among others, how long the PD SOI device has been idling, which indirectly indicates how long data in the data retaining device has not been accessed. As such, the current invention may be used efficiently with, e.g., a cache replacement algorithm in a management of the data retaining device.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Test method for semiconductor memory device and semiconductor memory device therefor]]></title>
            <link>http://www.freepatentsonline.com./7633818.html</link>
            <description><![CDATA[The present invention detects a sense amplifier having an unbalanced characteristic. In a test method for a semiconductor memory device for detecting a sense amplifier having an unbalanced characteristic, an intermediate potential having different H and L levels from normal operation is restored in a first memory cell of a first bit line connected to a test target sense amplifier, charge quantity when the capacitance of the capacitor is small is virtually stored in the first memory cell, then the data of the first memory cell is read, and a malfunction of the sense amplifier is checked based on the presence of an error of read data.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Semiconductor memory device, controller, and read/write control method thereof]]></title>
            <link>http://www.freepatentsonline.com./7633817.html</link>
            <description><![CDATA[A controller  102  and four flash memories F 0  to F 3  are connected by twos to two memory buses, and each flash memory is divided into two regions of substantially the same size to form a first half and a last half regions. In a four-memory configuration, a consecutive logical address specified by a host apparatus is divided into a predetermined size, and a write operation is performed in a format that repeatedly circulates through F 0 , F 1 , F 2 , F 3  in this order. In a two-memory configuration, the write operation is performed in a format that repeatedly circulates through F 00 , F 10 , F 01 , F 11 . Thus, a controller processing is made common regardless of the number of flash memories connected to the controller.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Semiconductor memory device, rewrite processing method therefor, and program thereof]]></title>
            <link>http://www.freepatentsonline.com./7633816.html</link>
            <description><![CDATA[A comparing unit ( 12 ) in a readout control unit ( 11 ) compares one bit data stored in a memory body ( 20 ) with a value stored in a data storage unit B[m] which is prepared to store the one bit data. The data storage unit B[m] includes three memory cells MC[k] and the stored value of the data storage unit B[m] is obtained by a logical operation unit ( 16 ) operable to calculate an exclusive OR with respect to the three memory cells MC[k]. When mismatching is detected in the comparing unit ( 12 ), a rewrite cell determination unit ( 13 ) determines one of the three memory cells MC[k], to which rewriting of the stored value is performed. In the case where the stored value in the data storage unit B[m], if the data storage unit B[m] has a memory cell MC[k] to which writing can be performed, the writing is performed in priority to erasing.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Flexible word line boosting across VCC supply]]></title>
            <link>http://www.freepatentsonline.com./7633815.html</link>
            <description><![CDATA[Systems and methods for producing a boosted voltage which can be used as a boosted word line voltage for read mode operations of memory cells are disclosed. The system contains a VCC comparator, a look up table, and a boosting circuit including a set of boosting capacitors. The look up table has a list of trim codes that indicates desired boosting ratios. The boosting ratio can vary depending on a level of a supply voltage to provide a sufficient word line voltage, thereby preventing and/or mitigating delay in reading operations. The number of the capacitors in the boosting circuit can be predetermined to be turned on or off according to the trim code. Accordingly, the voltage boost circuit provides a sufficient boosted word line voltage to a core cell gate with flexibility despite fluctuation of the supply voltage level.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Memory device and method of operating such]]></title>
            <link>http://www.freepatentsonline.com./7633814.html</link>
            <description><![CDATA[A memory device comprising a memory cell array; an input circuit for receiving command data and providing drive signals to the memory cell array; an output buffer for buffering data read out from the memory cell array; and a timer for driving the output buffer such that the buffered data are provided at an output after a predetermined time interval has elapsed, the predetermined time interval beginning with the provision of the drive signals.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Method of performing an erase operation in a non-volatile memory device]]></title>
            <link>http://www.freepatentsonline.com./7633813.html</link>
            <description><![CDATA[An erase method of a memory cell array which includes at least one block having MLC is disclosed. The erase method includes shifting every threshold voltage distribution into a threshold voltage distribution having a highest level by pre-programming every cell in a block selected for erase, performing an erase operation on the pre-programmed memory block, performing a soft program and a verifying operation on the memory block, dividing the memory block into a first group and a second group when the memory block is passed, performing a verifying operation on the first group and performing a soft program and a verifying operation on the first group when the first group is not passed, and performing a verifying operation on the second group when the first group is passed and performing a soft program and a verifying operation on the second group when the second group is not passed.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Starting program voltage shift with cycling of non-volatile memory]]></title>
            <link>http://www.freepatentsonline.com./7633812.html</link>
            <description><![CDATA[A system is disclosed for programming non-volatile storage that improves performance by setting the starting programming voltage to a first level for fresh parts and adjusting the starting programming voltage as the memory is cycled. For example, the system programs a set of non-volatile storage elements during a first period using an increasing program signal with a first initial value and subsequently programs the set of non-volatile storage elements during a second period using an increasing program signal with a second initial value, where the second period is subsequent to the first period and the second initial value is different than the first initial value.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Non-volatile memory embedded in a conventional logic process and methods for operating same]]></title>
            <link>http://www.freepatentsonline.com./7633811.html</link>
            <description><![CDATA[A non-volatile memory system including an array of cells, each having an access transistor and a capacitor sharing a floating gate. The access transistors in each row are fabricated in separate well regions, which are independently biased. Within each row, the source of each access transistor is coupled to a corresponding virtual ground line, and each capacitor structure is coupled to a corresponding word line. Alternately, the source of each access transistor in a column is coupled to a corresponding virtual ground line. Within each column, the drain of each access transistor is coupled to a corresponding bit line. Select memory cells in each row are programmed by band-to-band tunneling. Bit line biasing prevents programming of non-selected cells of the row. Programming is prevented in non-selected rows by controlling the well region voltages of these rows. Sector erase operations are implemented by Fowler-Nordheim tunneling.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Non-volatile memory embedded in a conventional logic process and methods for operating same]]></title>
            <link>http://www.freepatentsonline.com./7633810.html</link>
            <description><![CDATA[A non-volatile memory system including an array of cells, each having an access transistor and a capacitor sharing a floating gate. The access transistors in each row are fabricated in separate well regions, which are independently biased. Within each row, the source of each access transistor is coupled to a corresponding virtual ground line, and each capacitor structure is coupled to a corresponding word line. Alternately, the source of each access transistor in a column is coupled to a corresponding virtual ground line. Within each column, the drain of each access transistor is coupled to a corresponding bit line. Select memory cells in each row are programmed by band-to-band tunneling. Bit line biasing prevents programming of non-selected cells of the row. Programming is prevented in non-selected rows by controlling the well region voltages of these rows. Sector erase operations are implemented by Fowler-Nordheim tunneling.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Semiconductor device]]></title>
            <link>http://www.freepatentsonline.com./7633809.html</link>
            <description><![CDATA[A semiconductor storage device in which a read sense circuit stable for the fluctuation in manufacturing process and environmental conditions can be realized and the read access time can be shortened is provided. A sense circuit for reading a memory cell characterized in that a flowing current is varied depending on stored data and a voltage applied through a word line includes: an inverter; a first capacitor provided so as to be electrically connected between an input of the inverter and a bit line to which the memory cell is connected; a first transistor which short-circuits an input and an output of the inverter; a second capacitor for supplying charge to the first capacitor; and second transistors, wherein an input potential of the inverter is increased or decreased according to the current of the memory cell and is then amplified to be latched as a logic value.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Flash memories with adaptive reference voltages]]></title>
            <link>http://www.freepatentsonline.com./7633808.html</link>
            <description><![CDATA[Cells of a flash memory are read by determining respective adaptive reference voltages for the cells and comparing the cells' threshold voltages to their respective reference voltages. The adaptive reference voltages are determined either from analog measurements of the threshold voltages of the cells' neighbors or from preliminary estimates of the cells' threshold voltages based on comparisons of the cells' threshold voltages with integral or fractional reference voltages common to all the cells. Cells of a flash memory also are read by comparing the cells' threshold voltages to integral reference voltages, comparing the threshold voltages of cells that share a common bit pattern to a fractional reference voltage, and adjusting the reference voltages in accordance with the comparisons.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Behavior based programming of non-volatile memory]]></title>
            <link>http://www.freepatentsonline.com./7633807.html</link>
            <description><![CDATA[The process for programming a set of memory cells is improved by adapting the programming process based on behavior of the memory cells. For example, a set of program pulses is applied to the word line for a set of flash memory cells. A determination is made as to which memory cells are easier to program and which memory cells are harder to program. Bit line voltages (or other parameters) can be adjusted based on the determination of which memory cells are easier to program and which memory cells are harder to program. The programming process will then continue with the adjusted bit line voltages (or other parameters).]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Memory device with a nonvolatile memory array]]></title>
            <link>http://www.freepatentsonline.com./7633806.html</link>
            <description><![CDATA[A memory device having a nonvolatile memory array, at least one driver for programming the memory array, which driver is connected to the memory array in order to drive a programming potential, and a drive circuit for controlling the at least one driver, wherein the drive circuit has at least one switch for switching a current as a function of the digital logic potential at the input and the drive circuit has a current-to-voltage converter connected to the output, which converter is designed to output a control potential depending on the switched current for driving the at least one driver.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Circuit and method for generating a reference voltage in memory devices having a non-volatile cell matrix]]></title>
            <link>http://www.freepatentsonline.com./7633805.html</link>
            <description><![CDATA[A generator circuit generates a reference voltage on an output terminal connected to a matrix of non-volatile memory cells and includes a comparator positioned between a common node and the output terminal. The comparator has first and second input terminals and an output terminal suitable for supplying a compared voltage given by comparing first and second voltage values present on the first and second input terminals. The circuit includes a reference cell inserted between the common node and a first voltage reference. Advantageously, the reference cell comprises a floating gate with a contact terminal coupled to a biasing block, having an input terminal connected to the output terminal of the generator circuit and being suitable for periodically biasing the floating gate contact terminal at a biasing voltage of a second voltage reference.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Adjusting programming or erase voltage pulses in response to the number of programming or erase failures]]></title>
            <link>http://www.freepatentsonline.com./7633804.html</link>
            <description><![CDATA[Memory devices and methods of operating memory devices are provided. In one such embodiment a programming voltage pulse or an erase voltage pulse is applied to memory cells of a memory device. A number of the memory cells that failed to program or erase is determined and is compared to a certain number that can be different than a number of memory cells to be programmed or erased. The programming voltage pulse or the erase voltage pulse is adjusted in response to the comparison of the number of memory cells that failed to program or erase to the certain number. The adjusted programming voltage pulse or the adjusted erase voltage pulse is applied to the memory cells that failed to program or erase.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Methods of operating memory devices including negative incremental step pulse programming and related devices]]></title>
            <link>http://www.freepatentsonline.com./7633803.html</link>
            <description><![CDATA[A memory device may include a plurality of memory cell transistors serially coupled in a string between a string selection transistor and a ground selection transistor. Moreover, the string selection transistor may be coupled between the string and a bitline, and the ground selection transistor may be coupled between the string and a common source line. During programming, one of the plurality of memory cell transistors in the string may be selected for a program operation so that other memory cell transistors in the string are unselected, and a plurality of negative voltage pulses may be applied to a channel region of the selected memory cell transistor. While applying the plurality of negative voltage pulses to the channel region, a positive pass voltage may be applied to control gate electrodes of the unselected memory cell transistors, and a positive program voltage may be applied to a control gate electrode of the selected memory cell. Related methods and devices are discussed.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages]]></title>
            <link>http://www.freepatentsonline.com./7633802.html</link>
            <description><![CDATA[A set of non-volatile storage elements undergoes initial programming, after which a reprogramming, with higher verify levels, is performed in non-real time, such as when a control enters a standby mode, when no other read or write tasks are pending. The reprogramming can program pages in the set one at a time, stopping at a page boundary when another read or write task is pending, and restarting when the control become available again. Status flags can be provided to identify whether a page and/or the set has completed the reprogramming. In another aspect, a higher pass voltage is applied to unselected word lines during the reprogramming. In another aspect, an error count is determined using a default set of read voltages, and an alternative set of read voltages is selected if the count exceeds a threshold.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Memory in logic cell]]></title>
            <link>http://www.freepatentsonline.com./7633801.html</link>
            <description><![CDATA[Methods, devices, and systems for a memory in logic cell are provided. One or more embodiments include using a cell structure having a first gate, a second gate, and a third gate, e.g., a control gate, a back gate, and a floating gate, as a memory in logic cell. The method includes programming the floating gate to a first state to cause the memory in logic cell to operate as a first logic gate type. The method further includes programming the floating gate to a second state to cause the memory in logic cell to operate as a second logic gate type.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Redundancy scheme in memory]]></title>
            <link>http://www.freepatentsonline.com./7633800.html</link>
            <description><![CDATA[Column redundancy is provided outside of a FLASH memory chip using a separate companion controller chip. The companion chip initially receives and stores fuse address information from the FLASH memory chip for defective memory cells in the FLASH memory. In a read mode of operation, the companion control chip detects receipt of a defective address from the FLASH memory and stores in a redundant shift register redundant data that is downloaded from the FLASH memory chip. The redundant data is used to provide correct FLASH memory data to an external user that interfaces with the companion control chip. In a program mode of operation, the companion control chip provides redundant bits that are stored in redundant columns in the FLASH memory chip. The companion control chip provides flexibility by readily providing a number of different redundancy schemes for bits, nibbles, or bytes without requiring additional logic circuits in the FLASH memory chip itself. Data is transferred between the FLASH memory chip and the companion control chip a byte at a time.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Method combining lower-endurance/performance and higher-endurance/performance information storage to support data processing]]></title>
            <link>http://www.freepatentsonline.com./7633799.html</link>
            <description><![CDATA[An information storage arrangement that combines higher-endurance (or performance) storage with lower-endurance (or performance) storage is managed in a manner that makes judicious use of the lower-endurance (or performance) storage. It is therefore possible to exploit the economic advantage associated with lower-endurance (or performance) storage, while also avoiding storage capacity losses that would otherwise be associated with lower-endurance (or performance) storage.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[M+N bit programming and M+L bit read for M bit memory cells]]></title>
            <link>http://www.freepatentsonline.com./7633798.html</link>
            <description><![CDATA[A memory device and programming and/or reading process is described that programs and/or reads the cells in the memory array with higher threshold voltage resolution than required. In programming non-volatile memory cells, this allows a more accurate threshold voltage placement during programming and enables pre-compensation for program disturb, increasing the accuracy of any subsequent read or verify operation on the cell. In reading/sensing memory cells, the increased threshold voltage resolution allows more accurate interpretations of the programmed state of the memory cell and also enables more effective use of probabilistic data encoding techniques such as convolutional code, partial response maximum likelihood (PRML), low-density parity check (LDPC), Turbo, and Trellis modulation encoding and/or decoding, reducing the overall error rate of the memory.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Flash memory and method for determining logic states thereof]]></title>
            <link>http://www.freepatentsonline.com./7633797.html</link>
            <description><![CDATA[A method for determing the logic state of a memory cell of an array is provided. The array includes many word lines and bit lines. The method proceeds with the following steps. Firstly, a first voltage varing according to a sensing parasitic resistance of the memory cell is applied to the memory cell for a cell current. Next, a second voltage is applied to a reference cell corresponding to the memory cell for a reference current. Then, the cell current is compared with the reference current so as to determine the logic state of the memory cell.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Storage element and memory]]></title>
            <link>http://www.freepatentsonline.com./7633796.html</link>
            <description><![CDATA[A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Magnetoresistive random access memory and its write control method]]></title>
            <link>http://www.freepatentsonline.com./7633795.html</link>
            <description><![CDATA[A write control method for a magnetoresistive random access memory, which includes a memory cell having a recording layer with an axis of easy magnetization and an axis of hard magnetization. The write control method includes writing a datum into the memory cell. The writing of the datum includes applying a pulsative first magnetic field substantially parallel to the axis of easy magnetization of the recording layer and a pulsative second magnetic field substantially parallel to the axis of hard magnetization to the recording layer so as to cause a period of the pulsative first magnetic field and a period of the pulsative second magnetic field to overlap each other, and applying a pulsative third magnetic field having substantially the same direction as the pulsative first magnetic field to the recording layer at least once after applying the pulsative first magnetic field to the recording layer.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Static random access memory cell]]></title>
            <link>http://www.freepatentsonline.com./7633794.html</link>
            <description><![CDATA[A static random access memory (SRAM) cell having an inverter and a tri-state inverter. An input of the inverter is coupled to an output of the tri-state inverter and an output of the inverter is coupled to an input of the tri-state inverter. The tri-state inverter has an enable node to which a read signal is applied and is configured to generate an output signal that is the complement of an input signal in response to an active read signal. The SRAM cell further includes an access transistor having a first node coupled to the output of the tri-state inverter and having a second node coupled to the digit line. The access transistor is configured to couple the first and second nodes in response to an active access signal applied to its gate.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Static random access memory cell]]></title>
            <link>http://www.freepatentsonline.com./7633793.html</link>
            <description><![CDATA[A static random access memory (SRAM) cell having an inverter and a tri-state inverter. An input of the inverter is coupled to an output of the tri-state inverter and an output of the inverter is coupled to an input of the tri-state inverter. The tri-state inverter has an enable node to which a read signal is applied and is configured to generate an output signal that is the complement of an input signal in response to an active read signal. The SRAM cell further includes an access transistor having a first node coupled to the output of the tri-state inverter and having a second node coupled to the digit line. The access transistor is configured to couple the first and second nodes in response to an active access signal applied to its gate.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Static random access memory cell]]></title>
            <link>http://www.freepatentsonline.com./7633792.html</link>
            <description><![CDATA[A static random access memory (SRAM) cell having an inverter and a tri-state inverter. An input of the inverter is coupled to an output of the tri-state inverter and an output of the inverter is coupled to an input of the tri-state inverter. The tri-state inverter has an enable node to which a read signal is applied and is configured to generate an output signal that is the complement of an input signal in response to an active read signal. The SRAM cell further includes an access transistor having a first node coupled to the output of the tri-state inverter and having a second node coupled to the digit line. The access transistor is configured to couple the first and second nodes in response to an active access signal applied to its gate.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Read-write circuit for short bit line DRAM]]></title>
            <link>http://www.freepatentsonline.com./7633791.html</link>
            <description><![CDATA[A read-write circuit serving as a global sense amp for SBL (short bit line) DRAM is realized, wherein the read-write circuit includes a common line, such that the common line is used for connecting a read circuit, a latch circuit, a write circuit, a left select circuit and a right select circuit in the global sense amp for transferring write data to memory cells through a local sense amp and reading a stored data from the memory cells through the local sense amp. In doing so, the common line is useful for realizing a layout more effectively within a limited pitch, and also reducing area of the layout. And the read-write circuit is efficiently connected to a local sense amp in the short bit line memory architecture for reading and writing data. In addition, alternative circuits are described for implementing the read-write circuit for the short bit line DRAM.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Multi-resistive state memory device with conductive oxide electrodes]]></title>
            <link>http://www.freepatentsonline.com./7633790.html</link>
            <description><![CDATA[A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO 3 —LSCoO or LaNiO 3 —LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Planar third dimensional memory with multi-port access]]></title>
            <link>http://www.freepatentsonline.com./7633789.html</link>
            <description><![CDATA[Embodiments of the invention relate generally to a planar third dimensional memory with multi-port access, the planar third dimensional memory including memory planes composed of a plurality of memory layers. The memory layers can include non-volatile memory elements. The planar third dimensional memory can also include insulation layers, each being formed to separate a memory layer from another memory layer, and a logic plane configured to control access to the plurality of memory planes. In some cases, the memory planes can be formed vertically above the logic plane. The logic plane can be formed in a substrate, such as a semiconductor wafer, for example. The planar third dimensional memory can include a multi-port interface that can be configured to provide access between a plurality of ports and the plurality of memory planes.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Variable resistive memory wordline switch]]></title>
            <link>http://www.freepatentsonline.com./7633788.html</link>
            <description><![CDATA[A variable resistive memory device includes a main wordline, a wordline connecting switch in signal communication with the main wordline, a sub-wordline in signal communication with the wordline connecting switch, and a variable resistive memory cell having a variable resistance in signal communication with a first terminal of a switching element, a second terminal of the switching element disposed in signal communication with the sub-wordline; and a method of controlling the voltage of a sub-wordline in a variable resistive memory device includes switchably passing a voltage from a main wordline to the sub-wordline, and substantially blocking forward current flow from the sub-wordline to a variable resistive memory cell of the device.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[ROM memory component featuring reduced leakage current, and method for writing the same]]></title>
            <link>http://www.freepatentsonline.com./7633787.html</link>
            <description><![CDATA[The invention relates to a ROM memory cell comprising a first terminal connected to a word line, comprising a second terminal and comprising a third terminal, the second terminal being connected to a bit line and/or the third terminal being connected to a supply line for precharging the third terminal. The ROM memory cell according to the invention is distinguished by the fact that the same reference potential is in each case applied to the first terminal, the second terminal and/or the third terminal in a standby operating mode. The invention furthermore relates to a ROM memory component comprising such ROM memory cells, and to a method for reading from the ROM memory cell.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Couplings within memory devices and methods]]></title>
            <link>http://www.freepatentsonline.com./7633786.html</link>
            <description><![CDATA[Methods and apparatus are provided. A memory device includes a first bit line selectively coupled to an input of a sensing device through a first multiplexer gate, and a second bit line selectively coupled to the input of the sensing device through a second multiplexer gate. The first bit line is formed at a first vertical layer and is coupled to a first source/drain region of the first multiplexer gate. The input of the sensing device is formed at a second vertical layer different than the first vertical layer and is coupled to a second source/drain region of the first multiplexer gate and a first source/drain region of the second multiplexer gate. The second bit line is formed at the first vertical layer and is coupled to a second source/drain region of the second multiplexer gate.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Semiconductor memory device and method of generating chip enable signal thereof]]></title>
            <link>http://www.freepatentsonline.com./7633785.html</link>
            <description><![CDATA[Provided are a semiconductor memory device and a method of generating a chip enable signal thereof. The device includes a plurality of memory chips and an interface chip that are stacked. Each of the memory chips includes a control signal setting unit, which sets input signals applied to first and second input nodes as less significant 2-bit control signals of n-bit control signals, performs a logic AND operation on the less significant 2-bit control signals to generate AND operated signals, performs a logic XOR operation on each of the AND operated signals and each bit signal of more significant n−2-bit input signals applied to third to n-th input nodes to set the n−2-bit control signals, outputs the signal applied to the second input node through a first output node, inverts the signal applied to the first input node to output the inverted signal through a second output node, and outputs the more significant n−2-bit input signals through third through n-th output nodes, respectively. The first through n-th output nodes of one of two adjacent memory chips are respectively connected to the first through n-th input nodes of the other of the two adjacent memory chips.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Junction field effect dynamic random access memory cell and content addressable memory cell]]></title>
            <link>http://www.freepatentsonline.com./7633784.html</link>
            <description><![CDATA[A semiconductor memory device including a dynamic random access memory (DRAM) cell and a ternary content addressable memory (TCAM) cell is disclosed. The DRAM cell may include a data storing portion and a data read portion. The data storing portion and data read portion comprising p-channel junction field effect transistors. The TCAM cell including an x-cell, y-cell, and comparator circuit. The x-cell, y-cell, and comparator circuits comprising p-channel JFETs.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Tunnel junction device having oxide ferromagnetic electroconductive electrodes and three-layer structure tunneling film]]></title>
            <link>http://www.freepatentsonline.com./7633723.html</link>
            <description><![CDATA[To provide a tunnel junction device having a high MR ratio even at room temperature, a tunneling film as a nonmagnetic layer of three-layer structure of LaMnO 3 /SrTiO 3 /LaMnO 3  is arranged between a ferromagnetic metal material La 0.6 Sr 0.4 MnO 3  ( 12 ) and a ferromagnetic metal film material La 0.6 Sr 0.4 MnO 3  ( 14 ). The tunneling film comprises two unit layers of LaMnO 3  ( 13 A) arranged on the ferromagnetic metal material La 0.6 Sr 0.4 MnO 3  ( 12 ); five unit layers of SrTiO 3  ( 13 B); and two unit layers of LaMnO 3  ( 13 C) arranged at the interface between the SrTiO 3  ( 13 B) and the ferromagnetic metal film material La 0.6 Sr 0.4 MnO 3  ( 14 ).]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[CPP reader with phase detection of magnetic resonance for read-back]]></title>
            <link>http://www.freepatentsonline.com./7633699.html</link>
            <description><![CDATA[An apparatus includes a magnetically biased multilayer structure having a reference layer and a free layer separated by a spacer layer; a DC current source connected to the multilayer structure; an AC current source connected to the multilayer structure; and a phase detector for measuring a phase difference between an AC current and a voltage across the multilayer structure. A method performed by the apparatus is also provided.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Magnetic sensor and manufacturing method therefor]]></title>
            <link>http://www.freepatentsonline.com./7633132.html</link>
            <description><![CDATA[A magnetic sensor comprises a substrate, magnetoresistive element of a spin-valve type, a bias magnetic layer (or a permanent magnet film), and a protective film, wherein the bias magnetic layer is connected with both ends of the magnetoresistive element and the upper surface thereof is entirely covered with the lower surface of the magnetoresistive element at both ends. Herein, distances between the side surfaces of the both ends of the magnetoresistive element and the side surfaces of the bias magnetic layer viewed from the protective film do not exceed 3 μm. In addition, a part of the bias magnetic layer can be covered with both ends of the magnetoresistive element, and an intermediate layer is arranged in relation to the magnetoresistive element, bias magnetic layer, and protective film so as to entirely cover the upper surface of the bias magnetic layer.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Non-volatile memory integrated circuit]]></title>
            <link>http://www.freepatentsonline.com./7633114.html</link>
            <description><![CDATA[A nonvolatile memory integrated circuit arrayed in rows and columns is disclosed. Parallel lines of implant N-type regions are formed in a P-well of a semiconductor substrate, with lines of oxide material isolating each pair of the lines. Columns of memory cells straddle respective pairs of the implant region lines, with one line of the pair forming the source region and one line of the pair forming the drain region of each memory cell of the column. Each memory cell has a floating polysilicon storage gate. One of plural wordlines overlies each row of the memory cells. The portion of the wordline overlying each memory cells forms the control gate of the memory cell. Programming and erase operations occur by Fowler-Nordheim tunneling of electrons through a tunnel oxide layer between the floating gate and the source of the cell.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
        <item>
            <title><![CDATA[Field-effect-transistor multiplexing/demultiplexing architectures]]></title>
            <link>http://www.freepatentsonline.com./7633098.html</link>
            <description><![CDATA[This disclosure relates to field-effect-transistor (FET) multiplexing/demultiplexing architectures and methods for fabricating them. One of these FET multiplexing/demultiplexing architectures enables decoding of an array of tightly pitched conductive structures. Another enables efficient decoding of various types of conductive-structure arrays, tightly pitched or otherwise. Also, processes for forming FET multiplexing/demultiplexing architectures are disclosed that use alignment-independent processing steps. One of these processes uses one, low-accuracy imprinting step and further alignment-independent processing steps.]]></description>
            <pubDate>Tue, 15 Dec 2009 08:00:00 EST</pubDate>
        </item>
    </channel>
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