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8389375 Memory cell formed using a recess and methods for forming the same  
In a first aspect, a method of forming a memory cell is provided, the method including: (1) forming a pillar above a substrate, the pillar comprising a steering element and a metal hardmask layer;...
8383478 High-density nonvolatile memory and methods of making the same  
Nonvolatile memory cells and methods of forming the same are provided, the methods including forming a first conductor at a first height above a substrate; forming a first pillar-shaped...
8379437 Flexible multi-pulse set operation for phase-change memories  
Methods and apparatus are provided that include reading a plurality of sets of program pulse tuning instructions from a memory page, the memory page including a plurality of memory cells; and...
8379082 System, methods and apparatus for substrate carrier content verification using a material handling system  
Methods and systems are provided for mapping substrates in a substrate carrier. The invention includes a substrate carrier including one or more windows; and an imaging system coupled to a...
8375892 Methods and apparatus for incorporating nitrogen in oxide films  
In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process...
8373150 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same  
In some aspects, a memory cell is provided that includes (1) a steering element above a substrate; and (2) a reversible resistance-switching element coupled to the steering element, wherein the...
8372740 Methods for increased array feature density  
The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern...
8372210 Post CMP scrubbing of substrates  
A cleaning method is provided for brush cleaning a surface of a substrate. The method comprises scrubbing a first surface of the substrate with a brush having a first surface geometry; and then...
8365682 Methods and apparatus for supporting substrates  
Substrate support methods and apparatus include vertically aligned lift pins that have bearing surfaces that engage friction plates and/or magnetic fields to maintain the vertical orientation of...
8357606 Resist feature and removable spacer pitch doubling patterning method for pillar structures  
A method of making a semiconductor device includes forming a layer over a substrate, forming a plurality of spaced apart features of imagable material over the layer, forming sidewall spacers on...
8356968 Methods and apparatus for an efficient handshake between material handling and material processing devices for safe material transfer  
Methods and systems are provided. The invention includes performing a handshake directly between a load port associated with process equipment and material handling equipment; and transferring a...
8354660 Bottom electrodes for use with metal oxide resistivity switching layers  
In a first aspect, an MIM stack is provided that includes (1) a first conductive layer comprising a first metal-silicide layer and a second metal-silicide layer; (2) a resistivity-switching layer...
8351259 Methods and apparatus for using a configuration array similar to an associated data array  
Methods, apparatus, and systems in accordance with this invention include memories that include a data array and a configuration array adapted to store configuration information for configuring...
8350299 Memory with high dielectric constant antifuses adapted for use at low voltage  
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant...
8349664 Nonvolatile memory cell comprising a diode and a resistance-switching material  
In a novel nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NixOy,...
8349663 Vertical diode based memory cells having a lowered programming voltage and methods of forming the same  
In a first aspect, a method for forming a non-volatile memory cell is provided. The method includes (1) forming a metal-insulator-metal (MIM) antifuse stack including (a) a first metal layer; (b)...
8337367 Methods and apparatus for monitoring and encouraging health and fitness  
Methods and apparatus are provided for monitoring and encouraging health and fitness. In accordance with a first aspect, an apparatus is provided that is adapted to assist in weight loss and...
8337335 Systems and methods for measuring and/or analyzing swing information  
In a first aspect, a system for monitoring a swing is provided that includes (1) a swing measurement device adapted to couple to a swinging object and to output a signal indicative of a...
8333939 High temperature optical sensor device for substrate fabrication equipment  
Methods and apparatus for sensing a substrate in a high temperature environment are provided. The invention includes a support frame having one or more apertures; one or more optical devices...
8330250 P-I-N diode crystallized adjacent to a silicide in series with a dielectric material  
A vertically oriented p-i-n diode is provided that includes semiconductor material crystallized adjacent a silicide, germanide, or silicide-germanide layer, and a dielectric material arranged...
8327075 Methods and apparatus for handling a cache miss  
In a first aspect, a first method is provided. The first method includes the steps of (1) providing a cache having a plurality of cache entries, each entry adapted to store data, wherein the cache...
8322045 Single wafer apparatus for drying semiconductor substrates using an inert gas air-knife  
In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air...
8314477 Deposited semiconductor structure to minimize N-type dopant diffusion and method of making  
A memory cell is provided that includes a semiconductor pillar and a reversible state-change element coupled to the semiconductor pillar. The semiconductor pillar includes a heavily doped bottom...
8314023 Methods involving memory with high dielectric constant antifuses adapted for use at low voltage  
Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material...
8309415 Methods and apparatus for increasing memory density using diode layer sharing  
Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches...
8309407 Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices  
Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects of this invention, such as non-volatile memories, that include (1) a...
8304284 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same  
In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled...
8283706 Optimization of critical dimensions and pitch of patterned features in and above a substrate  
A die is formed with different and optimized critical dimensions in different device levels and areas of those device levels using photolithography and etch techniques. One aspect of the invention...
8275927 Storage sub-system for a computer comprising write-once memory devices and write-many memory devices and related method  
Methods and apparatus are provided for a solid state non-volatile storage sub-system of a computer. The storage sub-system includes a write-once storage sub-system memory device and a write-many...
8264187 Systems, apparatus and methods for making an electrical connection  
Systems, apparatus and methods are disclosed for allowing electrical connection to an electrical end effector in a robot apparatus. In one aspect, an electrical coupling is adapted to provide...
8252644 Method for forming a nonvolatile memory cell comprising a reduced height vertical diode  
A method for forming a nonvolatile memory cell is provided that includes: (1) forming a rail-shaped first conductor above a substrate, (2) forming a rail-shaped second conductor above the first...
8251057 Hyperbaric chamber control and/or monitoring system and methods for using the same  
In a first aspect, a monoplace hyperbaric chamber providing Venturi induced gas circulation and ventilation is disclosed. The chamber includes a control and monitoring system that offers reduced...
8250348 Methods and apparatus for dynamically switching processor mode  
In a first aspect, a first processing method is provided. The first processing method includes the steps of (1) operating a processor in a first mode based on an operand size associated with a...
8243509 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material  
A nonvolatile memory cell is described, the memory cell comprising a semiconductor diode. The semiconductor material making up the diode is formed with significant defect density, and allows very...
8237146 Memory cell with silicon-containing carbon switching layer and methods for forming the same  
In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (MIM) stack, the MIM stack including (a) a first conductive carbon layer; (b) a...
8236623 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same  
In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element...
8233308 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same  
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a...
8227787 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride  
In the present invention, a metal oxide or nitride compound which is a wide-band-gap semiconductor abuts a silicon, germanium, or alloy of silicon and/or germanium of the opposite conductivity...
8218551 Hierarchical scheduling  
In a first aspect of the invention, a first method is provided for hierarchical scheduling. The first method includes the steps of (1) receiving data from one or more pipes, each pipe including a...
8213428 Methods and apparatus for indexing memory of a network processor  
A method is provided for address mapping in a network processor. The method includes the steps of (1) determining a port number of a port that receives a data cell; (2) determining a virtual path...
8208282 Vertically stacked field programmable nonvolatile memory and method of fabrication  
A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element...
8206075 Methods and apparatus for sealing a chamber  
In certain aspects, a load lock chamber is provided that includes a body having at least one sealing surface wall including a sealing surface. The sealing surface wall has an opening adjacent the...
8204617 Methods and apparatus for enhanced operation of substrate carrier handlers  
Systems, tools, and methods are provided in which a first signal is transmitted from a tool to a Fab indicating that all substrates to be processed have been removed from a specific carrier and...
8203864 Memory cell and methods of forming a memory cell comprising a carbon nanotube fabric element and a steering element  
A method of programming a carbon nanotube memory cell is provided, wherein the memory cell comprises a first conductor, a steering element, a carbon nanotube fabric, and a second conductor,...
8198125 Method of making monolithic photovoltaic module on flexible substrate  
A method of making a monolithic photovoltaic module having a flexible substrate is described. The method includes the following steps. First, a flexible substrate is provided, and a first adhesive...
8183121 Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance  
Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom...
8173486 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same  
In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element...
8163191 Apparatus and methods for using high frequency chokes in a substrate deposition apparatus  
In certain aspects, a substrate deposition apparatus, including a gas tube coupled to a gas source, an RF power source and a substrate processing chamber, is provided. The gas tube is adapted to...
8142260 Methods and apparatus for removal of films and flakes from the edge of both sides of a substrate using backing pads  
Apparatus and methods are provided to polish an edge of a substrate. The invention includes a polishing head adapted to retain a backing pad having a selected contour, wherein the polishing head...
8133793 Carbon nano-film reversible resistance-switchable elements and methods of forming the same  
Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the...


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