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8637366 Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states  
A memory cell according to the present invention comprises a bottom conductor, a doped semiconductor pillar, and a top conductor. The memory cell does not include a dielectric rupture antifuse...
8635784 Methods and apparatus for drying a substrate  
In a first aspect, a method of drying at least a portion of a substrate located within a fluid is provided. The method includes contacting an edge of the substrate that is located within the fluid...
8633567 Devices including a P-I-N diode disposed adjacent a silicide in series with a dielectric material  
A device is provided that includes a vertically oriented p-i-n diode that includes semiconductor material, a silicide, germanide, or silicide-germanide layer disposed adjacent the vertically...
8633528 Methods and apparatus for increasing memory density using diode layer sharing  
A memory is described that includes a shared diode layer and a memory element coupled to the diode layer. The memory element has a pie slice-shape, and includes a sidewall having a carbon film...
8633105 Method of fabricating a self-aligning damascene memory structure  
A method of forming a memory cell is provided. The method includes forming a first pillar-shaped element that includes a first semiconductor material, forming a first opening self-aligned with the...
8617032 Methods and apparatus for monitoring and encouraging health and fitness  
Methods and apparatus are provided for monitoring and encouraging health and fitness. In accordance with a first aspect, an apparatus is provided that is adapted to assist in weight loss and...
8601975 Methods and loadport apparatus for purging a substrate carrier  
In a first aspect, a loadport is provided. The loadport has a plate adapted to couple to a door of a substrate carrier to open the substrate carrier wherein the plate includes a first opening...
8599531 Electrostatic end effector apparatus, systems and methods  
Systems, apparatus and methods for transporting substrates between system components of an electronic device manufacturing system are provided. The systems and apparatus include an electrostatic...
8592792 Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride  
A monolithic three dimensional memory array is provided that includes a first memory level formed above a substrate, and a second memory level monolithically formed above the first memory level....
8589630 Methods and apparatus for handling a cache miss  
In a first aspect, a first method is provided. The first method includes the steps of (1) providing a cache having a plurality of cache entries, each entry adapted to store data, wherein the cache...
8586456 Use of CL2 and/or HCL during silicon epitaxial film formation  
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon...
8575719 Silicon nitride antifuse for use in diode-antifuse memory arrays  
Silicon nitride antifuses can be advantageously used in memory arrays employing diode-antifuse cells. Silicon nitride antifuses can be ruptured faster and at a lower breakdown field than antifuses...
8574510 Stackable electrochemical analyte sensors, systems and methods including same  
In some aspects, an analyte sensor is provided for detecting an analyte concentration level in a bio-fluid sample. The analyte sensor has a base with first and second ends, a concave recess in the...
8569730 Carbon-based interface layer for a memory device and methods of forming the same  
In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based...
8566607 Cryptography methods and apparatus used with a processor  
In a first aspect, a first cryptography method is provided. The first method includes the steps of (1) in response to receiving a request to perform a first operation on data in a first memory...
8565015 Methods of programming two terminal memory cells  
Methods of programming two terminal memory cells are provided. A method includes: (a) reading information of a memory page including first, second, and nth memory cells, the information including...
8563133 Compositions and methods for modulation of nanostructure energy levels  
Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition...
8562917 Analyte meter sleeves and methods  
In some aspects, an analyte meter sleeve is provided for storing an analyte meter (e.g., a blood glucose meter or insulin pump) and a lancet device. The sleeve includes a first sleeve member...
8558220 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same  
In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material...
8557685 Memory cell that includes a carbon-based memory element and methods of forming the same  
Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with...
8557129 Methods of manufacturing optical devices  
Methods of manufacturing optical devices are disclosed. The method includes providing a structure-forming fiber bonded to at least one other optical component, the structure-forming fiber having a...
8556778 System and method for improving fitness equipment and exercise  
In a first aspect, a method is provided that includes the steps of (1) providing a monitor for determining a level of exercise performance performed by an exerciser and for outputting a signal...
8551855 Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same  
Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased...
8551850 Methods of forming a reversible resistance-switching metal-insulator-metal structure  
A method of forming a reversible resistance-switching metal-insulator-metal structure is provided, the method including forming a first non-metallic conducting layer, forming a non-conducting...
8551400 Analyte sensors, testing apparatus and manufacturing methods  
In some aspects, an analyte sensor is provided for detecting an analyte concentration level in a bio-fluid sample. The analyte sensor may include a first sensor member coupled to a base, wherein...
8536015 Memory cell that includes a carbon-based memory element and methods of forming the same  
In accordance with aspects of the invention, a method of forming a metal-insulator-metal stack is provided. The method includes forming a first conducting layer, forming a resistivity-switching...
8531904 Methods and apparatus for extending the effective thermal operating range of a memory  
Apparatus and systems are provided for thermal regulation of a memory integrated circuit (“IC”). The apparatus and systems may include a thermal sensor on a memory IC, and a heating element...
8530318 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same  
In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (“CNT”)...
8515993 Methods and apparatus for processing a database query  
In a first aspect, a method is provided that includes the steps of (1) pre-computing a query result for each of a plurality of whole segments of data included in a database; (2) receiving a query...
8509025 Memory array circuit incorporating multiple array block selection and related method  
Circuits and methods are described for decoding exemplary memory arrays of programmable and, in some embodiments, re-writable passive element memory cells, which are particularly useful for...
8507390 Methods and devices for forming nanostructure monolayers and devices including such monolayers  
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in...
8507315 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same  
A method of forming a memory cell is provided that includes forming a steering element above a substrate, and forming a reversible resistance-switching element coupled to the steering element. The...
8506458 System and method for improving fitness equipment and exercise  
In a first aspect, a method is provided that includes the steps of (1) providing a monitor for determining a level of exercise performance performed by an exerciser and for outputting a signal...
8503215 Vertically stacked field programmable nonvolatile memory and method of fabrication  
A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are...
8497204 Method for reducing dielectric overetch when making contact to conductive features  
In a first aspect, a method is provided that includes: forming a plurality of conductive or semiconductive features above a first dielectric material; depositing a second dielectric material above...
8490102 Resource allocation management using IOC token requestor logic  
In a first aspect, a first method is provided for managing system resource allocation. The first method includes the steps of (1) receiving a first command that requires a system resource; (2)...
8482973 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material  
A memory cell is provided that includes a first conductor, a second conductor, and a semiconductor junction diode between the first and second conductors. The semiconductor junction diode is not...
8481396 Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same  
Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased...
8481394 Memory cell that includes a carbon-based memory element and methods of forming the same  
In a first aspect, a method of forming a memory cell is provided that includes: (a) forming a layer of dielectric material above a substrate; (b) forming an opening in the dielectric layer; (c)...
8477296 Opto-electronic signal processing methods, systems, and apparatus for optical sensor interrogation  
Opto-electronic signal processing systems, apparatus and methods to extract a measured parameter from one or more interrogated optical sensors are disclosed. The apparatus includes an integrated...
8471360 Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same  
In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon...
8470646 Modulation of resistivity in carbon-based read-writeable materials  
In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (“MIM”) stack above a substrate, the MIM stack including a carbon-based switching...
8467224 Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom  
In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that...
8466068 Methods and apparatus for forming memory lines and vias in three dimensional memory arrays using dual damascene process and imprint lithography  
The present invention provides systems, apparatus, and methods for forming three dimensional memory arrays using a multi-depth imprint lithography mask and a damascene process. An imprint...
8466044 Memory cell that includes a carbon-based memory element and methods forming the same  
Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with...
8455368 Methods and apparatus for assembling and operating electronic device manufacturing systems  
A method for operating one or more electronic device manufacturing systems is provided, including the steps 1) performing a series of electronic device manufacturing process steps with a process...
8454437 Systems and methods for portable exergaming  
In a first aspect, a system for playing a video game is provided that includes (1) one or more sensors adapted to monitor one or more biometric parameters of a user and communicate the one or more...
8445385 Methods for etching carbon nano-tube films for use in non-volatile memories  
Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments,...
8444129 Methods of verifying effectiveness of a put of a substrate onto a substrate support  
In a first aspect, a method of manufacturing a substrate is provided wherein an end effector mounted substrate is attempted to be placed, that is put, onto a substrate support, such as a pedestal...
8441849 Reducing programming time of a memory cell  
The present invention provides methods and apparatus for adjusting voltages of bit and word lines to program a two terminal memory cell. The invention may include setting a first line connected to...


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