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7309899 |
Semiconductor device including a MOSFET with nitride side wall
A semiconductor device includes a semiconductor substrate, a gate insulating layer, a gate electrode structure and a side wall structure. The gate insulating layer is formed on the semiconductor...
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7078303 |
Method for manufacturing semiconductor device having thick insulating layer under gate side walls
A semiconductor device includes a semiconductor substrate, a silicon oxide layer formed on the semiconductor substrate, a gate electrode formed over the silicon oxide layer, and a side wall...
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6953732 |
Method of manufacturing a semiconductor device including a mosfet with nitride sidewalls
A method of manufacturing a semiconductor device includes providing a semiconductor substrate, and then forming a gate insulating layer on the semiconductor substrate. A lower gate electrode layer...
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6700167 |
Semiconductor device having thick insulating layer under gate side walls
A semiconductor device includes a semiconductor substrate, a silicon oxide layer formed on the semiconductor substrate, a gate electrode formed over the silicon oxide layer, and a side wall...
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6677651 |
Semiconductor device and method for manufacturing the same
A semiconductor device includes a semiconductor substrate, a silicon oxide layer formed on the semiconductor substrate, a gate electrode formed over the silicon oxide layer, and a side wall...
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