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6893499 |
Silicon single crystal wafer and method for manufacturing the same
According to the present invention, there is disclosed a silicon single crystal wafer grown according to the CZ method which is a wafer having a diameter of 200 mm or more produced from a single...
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6364947 |
Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same
In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid...
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6348180 |
Silicon single crystal wafer having few crystal defects
A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N 2 (V) region where a large amount of precipitated oxygen and which is...
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6174364 |
Method for producing silicon monocrystal and silicon monocrystal wafer
A method for producing a silicon monocrystal according to Czochralski method characterized in growing crystal with controlling a pulling rate between a transition pulling rate Pc at which there is...
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6120599 |
Silicon single crystal wafer having few crystal defects, and method for producing the same
In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm 2 /° C.min...
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6066306 |
Silicon single crystal wafer having few crystal defects, and method RFO producing the same
In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm 2 /°Cmin at...
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6048395 |
Method for producing a silicon single crystal having few crystal defects
A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N 2 (V) region where a large amount of precipitated oxygen and which is...
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5968264 |
Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same
In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid...
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