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7390535 |
Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
A chemical vapor deposition (CVD) system and method for applying an aluminide coating constituted by two or more extrinsic metal components on a jet engine component. The aluminide coating is...
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7368402 |
Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
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7271072 |
Stud electrode and process for making same
A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically...
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7253122 |
Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more...
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7235482 |
Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
An atomic layer deposition method is used to deposit a TiN or TiSiN film having a thickness of about 50 nm or less on a substrat. A titanium precursor which is tetrakis(dimethylamido)titanium...
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7230292 |
Stud electrode and process for making same
A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically...
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7201943 |
Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material
A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the...
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7087481 |
Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more...
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6875667 |
Method for forming capacitor
A capacitor is provided that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level, and further, permits...
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6863725 |
Method of forming a Ta2O5 comprising layer
In one aspect, a substrate is positioned within a deposition chamber. Gaseous precursors comprising TaF 5 and at least one of H 2 O and O 3 are fed to the deposition chamber under conditions...
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