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7378719 |
Low leakage MIM capacitor
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
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7368343 |
Low leakage MIM capacitor
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
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7364965 |
Semiconductor device and method of fabrication
A semiconductor device having a DRAM has a capacitor in which a dielectric film and an upper electrode are laminated on a lower electrode comprising a polysilicone, in which a natural oxide film...
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7259058 |
Fabricating method of semiconductor integrated circuits
A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an...
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EP1691421A1 |
Process for preparing a metal film on a substrate
The invention provides a process for preparing a metal film on a substrate, comprising the steps of: (a) depositing a film of a metal oxide on a substrate by means of a gas phase deposition...
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7018675 |
Method for forming a ruthenium metal layer
A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the...
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