Matches 1 - 37 out of 37
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7427571 Reactor design for reduced particulate generation  
Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process...
7405880 Multilayer optical filter  
In one aspect, the invention features articles that include a substrate having a first surface and a second surface contiguous with the first surface. The first and second surfaces are...
7402876 Zr— Sn—Ti—O films  
A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI 4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer...
7388246 Lanthanide doped TiOx dielectric films  
A dielectric film containing lanthanide doped TiO x and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
7378354 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7377977 High-purity crystal growth  
A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber...
7374964 Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics  
The use of atomic layer deposition (ALD) to form a nanolaminate layered dielectric layer of cerium oxide and aluminum oxide acting as a single dielectric layer with a ratio of approximately two to...
7368382 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7357138 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials  
A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance...
7303991 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7297641 Method to form ultra high quality silicon-containing compound layers  
Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a...
7294582 Low temperature silicon compound deposition  
Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate...
7285500 Thin films and methods of making them  
Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon containing precursor. In preferred embodiments, the methods result in Si-containing films that are...
7273799 Deposition over mixed substrates  
Chemical vapor deposition methods are used to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages,...
7223677 Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate  
The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by...
7203001 Optical retarders and related devices and systems  
In certain aspects, the disclosure relates to articles that include a plurality of walls configured to form a grating. Each of the plurality of walls can include a layer of a first material and a...
7202169 Method and system for etching high-k dielectric materials  
A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form...
7202166 Surface preparation prior to deposition on germanium  
Methods are provided for treating germanium surfaces in preparation for subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to depositing, the...
7186582 Process for deposition of semiconductor films  
Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both...
7164182 Pixel with strained silicon layer for improving carrier mobility and blue response in imagers  
An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in...
7142375 Films for optical use and methods of making such films  
Films for optical use, articles containing such films, methods for making such films, and systems that utilize such films, are disclosed.
7122414 Method to fabricate dual metal CMOS devices  
The present invention relates generally to barrier layers in transistor gate stacks in integrated circuits, and to processes for forming such gate stacks.
7092287 Method of fabricating silicon nitride nanodots  
A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon...
7052546 High-purity crystal growth  
A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber...
7045406 Method of forming an electrode with adjusted work function  
A method forms a gate stack for a semiconductor device with a desired work function of the gate electrode. The work function is adjusted by changing the overall electronegativity of the gate...
7041596 Surface treatment using iodine plasma to improve metal deposition  
An excited surfactant species is created by generating plasma discharge in a surfactant precursor gas. A surfactant species typically includes at least one of iodine, led, thin, gallium, and...
7034397 Oxygen bridge structures and methods to form oxygen bridge structures  
A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a...
7026219 Integration of high k gate dielectric  
Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide,...
7020981 Reaction system for growing a thin film  
A reactor defines a reaction chamber for processing a substrate. The reactor comprises a first inlet for providing a first reactant and to the reaction chamber and a second inlet for a second...
6998317 Method of making a non-volatile memory using a plasma oxidized high-k charge-trapping layer  
A method of fabricating a non-volatile memory device includes preparing a substrate; depositing a layer of HfO 2 by atomic layer deposition; annealing the substrate and HfO 2 layer in situ;...
6962859 Thin films and method of making them  
Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon-containing precursor. In preferred embodiments, the methods result in Si-containing films that are...
6958253 Process for deposition of semiconductor films  
Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both...
6924239 Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidation  
The present invention is generally directed towards a method for removing hydrocarbon contamination from a substrate prior to a nitridation step, therein providing for a generally uniform...
6900115 Deposition over mixed substrates  
Chemical vapor deposition methods are used to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages,...
6821825 Process for deposition of semiconductor films  
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high...
6790734 Manufacturing method of semiconductor device  
A manufacturing method of the present invention comprises the steps of patterning to form a gate electrode pattern as well as an oxide film pattern by applying dry etching to a layered film which...
6787481 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device can efficiently form on a substrate an amorphous thin film containing small amounts of impurities without needs for a rapid annealing treatment and...
Matches 1 - 37 out of 37