Matches 1 - 32 out of 32
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7411237 Lanthanum hafnium oxide dielectrics  
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety...
7410668 Methods, systems, and apparatus for uniform chemical-vapor depositions  
Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is...
7405454 Electronic apparatus with deposited dielectric layers  
An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using...
7378719 Low leakage MIM capacitor  
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
7368343 Low leakage MIM capacitor  
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
7329615 Atomic layer deposition method of forming an oxide comprising layer on a substrate  
This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first...
7326980 Devices with HfSiON dielectric films which are Hf-O rich  
A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
7288808 Capacitor constructions with enhanced surface area  
A capacitor fabrication method may include forming a first capacitor electrode over a substrate, the first electrode having an inner surface area per unit area and an outer surface area per unit...
7279041 Atomic layer deposition methods and atomic layer deposition tools  
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
7235501 Lanthanum hafnium oxide dielectrics  
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is formed as a structure of one or more monolayers, and methods of fabricating such dielectric...
7217615 Capacitor fabrication methods including forming a conductive layer  
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
7199023 Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed  
A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
7199001 Method of forming MIM capacitor electrodes  
A novel method for forming electrodes in the fabrication of an MIM (metal-insulator-metal) capacitor, is disclosed. The method improves MIM capacitor performance by preventing plasma-induced damage...
7183186 Atomic layer deposited ZrTiO4 films  
After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other...
7170174 Contact structure and contact liner process  
A contact structure and a method of forming thereof for semiconductor devices or assemblies are described. The method provides process steps to create a contact structure encompassed by a...
7160577 Methods for atomic-layer deposition of aluminum oxides in integrated circuits  
The present inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary method entails providing an outer chamber...
7119034 Atomic layer deposition method of forming an oxide comprising layer on a substrate  
This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first...
7112503 Enhanced surface area capacitor fabrication methods  
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
7109542 Capacitor constructions having a conductive layer  
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
7105065 Metal layer forming methods and capacitor electrode forming methods  
A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the...
7081421 Lanthanide oxide dielectric layer  
A ruthenium gate for a lanthanide oxide dielectric layer and a method of fabricating such a combination gate and dielectric layer produce a reliable structure for use in a variety of electronic...
7067438 Atomic layer deposition method of forming an oxide comprising layer on a substrate  
This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first...
7053432 Enhanced surface area capacitor fabrication methods  
A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode....
7018675 Method for forming a ruthenium metal layer  
A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the...
6946342 Semiconductor device and method for manufacturing the same  
A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the...
6916380 System for depositing a layered film  
The present invention relates to an electrically conductive film stack for semiconductors and methods and apparatus for providing same. A film stack comprising a first layer of a platinum-rhodium...
6916374 Atomic layer deposition methods and atomic layer deposition tools  
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
6897106 Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same  
A semiconductor memory device that includes a composite Al 2 O 3 /HfO 2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are...
6896730 Atomic layer deposition apparatus and methods  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A fixed volume first precursor gas charge is provided within a gas flow...
6852167 Methods, systems, and apparatus for uniform chemical-vapor depositions  
Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is...
6759705 Platinum-rhodium stack as an oxygen barrier in an integrated circuit capacitor  
The present invention relates to an electrically conductive film stack for semiconductors and methods and apparatus for providing same. A film stack comprising a first layer of a platinum-rhodium...
6740554 Methods to form rhodium-rich oxygen barriers  
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the...
Matches 1 - 32 out of 32