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7422774 Method for forming ultra low k films using electron beam  
The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one...
7368401 Integrated circuit having a doped porous dielectric and method of manufacturing the same  
In one aspect of the invention, a method for forming an integrated circuit having an at least substantially doped porous dielectric includes forming a semiconductor device. The semiconductor device...
7297376 Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers  
A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an...
7256139 Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices  
One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating...
7157384 Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)  
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also...
7151053 Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications  
Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for...
7077916 Substrate cleaning method and cleaning apparatus  
A substrate is cleaned by supplying an ultrasonically-agitated cleaning liquid onto the substrate from a nozzle provided above the substrate while spinning the substrate. The substrate being...
7062142 Organosilicate materials with mesoscopic structures  
A solid includes crosslinked amphiphilic organosilicate precursors. The amphiphilic organosilicate precursors form a matrix with an array of micro-structures dispersed in the matrix.
7060330 Method for forming ultra low k films using electron beam  
The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one...
7056560 Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)  
A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon...
7030041 Adhesion improvement for low k dielectrics  
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method...
6936551 Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices  
One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating...
6930061 Plasma processes for depositing low dielectric constant films  
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a...
6897163 Method for depositing a low dielectric constant film  
A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes at least one silicon oxycarbide layer and at least one substantially silicon-free layer...
6890850 Method of depositing dielectric materials in damascene applications  
Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for...
6869896 Plasma processes for depositing low dielectric constant films  
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of...
6825131 Method for forming dielectric thin film and dielectric thin film formed thereby  
A method for forming a dielectric thin film includes a film deposition step of spraying a material solution onto a heated substrate under a reduced pressure by a two-fluid technique using an inert...
6799907 Plasma enhanced method for increasing silicon-containing photoresist selectivity  
Provided is a method for increasing an etching selectivity of photoresist material. The method initiates with providing a substrate with a developed photoresist layer. The developed photoresist...
6797605 Method to improve adhesion of dielectric films in damascene interconnects  
Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material...
6747123 Organosilicate materials with mesoscopic structures  
Template-based methods fabricate organosilicate materials with mesoscopic structures. The methods include providing solutions of amphiphilic template molecules, mixing amphiphilic organosilicate...
Matches 1 - 20 out of 20