Matches 1 - 17 out of 17
Match Document Document Title
7405444 Micro-mechanically strained semiconductor film  
A semiconductor structure embodiment comprises a semiconductor membrane with local strained areas. The membrane with local strained areas is formed by a process including performing a local...
7368790 Strained Si/SiGe/SOI islands and processes of making same  
A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under...
7344937 Methods and apparatus with silicide on conductive structures  
Exemplary embodiments of the invention provide pixel circuits having transistors with silicide on top of their gate stacks. In the exemplary embodiments, silicide forming material does not...
7273788 Ultra-thin semiconductors bonded on glass substrates  
A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer...
7271445 Ultra-thin semiconductors bonded on glass substrates  
A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer...
7262428 Strained Si/SiGe/SOI islands and processes of making same  
A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under...
7202530 Micro-mechanically strained semiconductor film  
One aspect of the present subject matter relates to a method for forming strained semiconductor film. In various embodiments, a single crystalline semiconductor film is formed on a substrate...
7198974 Micro-mechanically strained semiconductor film  
One aspect of the present subject matter relates to a method for forming strained semiconductor film. In various embodiments, a single crystalline semiconductor film is formed on a substrate...
7153753 Strained Si/SiGe/SOI islands and processes of making same  
A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under...
7115480 Micromechanical strained semiconductor by wafer bonding  
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a first...
7080896 Micro-fluid ejection device having high resistance heater film  
A semiconductor substrate for a micro-fluid ejection head. The substrate includes a plurality of fluid ejection actuators disposed on the substrate. Each of the fluid ejection actuators includes a...
7045874 Micromechanical strained semiconductor by wafer bonding  
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a first...
7041605 Semiconductor contact structure and method of forming the same  
The present invention provides a semiconductor contact structure and a method of forming the same. An interlayer dielectric is patterned to form a contact hole that exposes a predetermined region...
7012000 Methods of forming silicide on conductive structures  
Exemplary embodiments of the invention provide pixel circuits having transistors with silicide on top of their gate stacks. In the exemplary embodiments, silicide forming material does not...
7008854 Silicon oxycarbide substrates for bonded silicon on insulator  
A method for forming a semiconductor on insulator structure includes forming a semiconductor layer on an insulating substrate, where the substrate is a different material than the semiconductor...
6900507 Apparatus with silicide on conductive structures  
Exemplary embodiments of the invention provide pixel circuits having transistors with silicide on top of their gate stacks. In the exemplary embodiments, silicide forming material does not...
6812577 Semiconductor contact structure having wide lower portion embedded in conductive material  
The present invention provides a semiconductor contact structure and a method of forming the same. An interlayer dielectric is patterned to form a contact hole that exposes a predetermined region...
Matches 1 - 17 out of 17