Matches 1 - 39 out of 39
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7429516 Tungsten nitride atomic layer deposition processes  
In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and...
7429402 Ruthenium as an underlayer for tungsten film deposition  
In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum...
7416979 Deposition methods for barrier and tungsten materials  
Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the...
7368402 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds  
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
7352048 Integration of barrier layer and seed layer  
The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer....
7351658 Process for producing yttrium oxide thin films  
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source...
7279432 System and method for forming an integrated barrier layer  
An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory...
7262133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line  
A method for depositing a cap layer over a metal-containing interconnect is provided. In one aspect, the cap layer is formed by introducing a pulse of a metal-containing compound followed by a...
7253122 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines  
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more...
7244683 Integration of ALD/CVD barriers with porous low k materials  
A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a...
7238552 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics  
A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH 3 or B 2 H 6 , followed by introduction of a tungsten containing compound,...
7220673 Method for depositing tungsten-containing layers by vapor deposition techniques  
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a...
7217615 Capacitor fabrication methods including forming a conductive layer  
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
7211508 Atomic layer deposition of tantalum based barrier materials  
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate...
7208413 Formation of boride barrier layers using chemisorption techniques  
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one...
7135207 Chemical vapor deposition method using alcohol for forming metal oxide thin film  
Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a...
7105065 Metal layer forming methods and capacitor electrode forming methods  
A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the...
7101753 Method for manufacturing a semiconductor device and method for forming high-dielectric-constant film  
A semiconductor device having a gate electrode on a silicon substrate via a gate insulating film is formed by laminating the gate insulating film with a silicon oxide film, formed on the silicon...
7094685 Integration of titanium and titanium nitride layers  
Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set...
7087481 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands  
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more...
7081271 Cyclical deposition of refractory metal silicon nitride  
Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle...
7071118 Method and apparatus for fabricating a conformal thin film on a substrate  
A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic...
7049226 Integration of ALD tantalum nitride for copper metallization  
A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The...
7041335 Titanium tantalum nitride silicide layer  
Methods and apparatus of forming titanium tantalum silicon nitride (Ti x Ta y (Si)N z ) layers are described. The titanium tantalum silicon nitride (Ti x Ta y (Si)N z ) layer may be formed using a...
7037574 Atomic layer deposition for fabricating thin films  
An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses...
6998014 Apparatus and method for plasma assisted deposition  
Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus...
6984592 Systems and methods for forming metal-doped alumina  
A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.
6958296 CVD TiSiN barrier for copper integration  
The present invention provides a method of forming a titanium silicon nitride barrier layer on a semiconductor wafer, comprising the steps of depositing a titanium nitride layer on the...
6936538 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics  
A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH 3 or B 2 H 6 , followed by introduction of a tungsten containing compound,...
6911391 Integration of titanium and titanium nitride layers  
Embodiments of the present invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a...
6858546 Method of depositing rare earth oxide thin films  
The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention...
6849545 System and method to form a composite film stack utilizing sequential deposition techniques  
A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then,...
6846743 Method for vapor deposition of a metal compound film  
A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The...
6846516 Multiple precursor cyclical deposition system  
Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate...
6838125 Method of film deposition using activated precursor gases  
A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing...
6831004 Formation of boride barrier layers using chemisorption techniques  
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one...
6821563 Gas distribution system for cyclical layer deposition  
Embodiments of the invention are generally directed to a cyclical layer deposition system, which includes a processing chamber, at least one load lock chamber connected to the processing chamber, a...
6777353 Process for producing oxide thin films  
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source...
6720027 Cyclical deposition of a variable content titanium silicon nitride layer  
Embodiments of the invention relate to an apparatus and method of depositing a titanium silicon nitride layer by cyclical deposition. In one aspect, a titanium silicon nitride layer having a...
Matches 1 - 39 out of 39