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7349185 |
Three terminal magnetic sensor for magnetic heads with a semiconductor junction
The TTM sensor includes a semiconductor structure and a spin valve structure, where the semiconductor structure includes at least two layers. Two of the three leads of the TTM sensor are engaged to...
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7259942 |
Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector or emitter region
In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a base region, a collector region, and an emitter region. A first barrier layer is...
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7244997 |
Magneto-luminescent transducer
An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from...
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7204013 |
Method of manufacturing a magnetoresistive sensor
In a method of forming a magnetoresistive sensor, first and second magnetic leads are formed. Next, a junction of magnetic and electrically conductive material is formed between the first and...
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7084467 |
Spin valve transistor with self-pinned antiparallel pinned layer structure
A spin valve transistor includes an emitter, a collector, a base between the emitter and the collector, a spin valve which includes a free layer structure, a self-pinned antiparallel (AP) pinned...
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6999285 |
Spin valve transistor with differential detection and method of making
A method and apparatus for providing a spin valve transistor with differential detection is disclosed. The present invention provides a structure including spin valves that are (100)-oriented on a...
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6861718 |
Spin valve transistor, magnetic reproducing head and magnetic information storage system
A spin valve transistor, magnetic reproducing head including a spin valve transistor and a magnetic information storage system having the spin valve transistor. The spin valve transistor has a...
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6753562 |
Spin transistor magnetic random access memory device
A spin transistor employing the ferromagnetic semiconductor/semiconductor heterojunction is disclosed. The ferromagnetic semiconductor layers form heterojunctions directly on the source and drain...
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