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7429516 Tungsten nitride atomic layer deposition processes  
In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and...
7429402 Ruthenium as an underlayer for tungsten film deposition  
In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum...
7429361 Method and apparatus for providing precursor gas to a processing chamber  
In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a...
7427571 Reactor design for reduced particulate generation  
Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process...
7416979 Deposition methods for barrier and tungsten materials  
Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the...
7405158 Methods for depositing tungsten layers employing atomic layer deposition techniques  
In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in...
7402518 Atomic layer deposition methods  
A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor...
7402210 Apparatus and method for hybrid chemical processing  
In one embodiment, an apparatus for performing an atomic layer deposition process is provided which includes a chamber body having a substrate support, a lid assembly attached to the chamber body,...
7396565 Multiple precursor cyclical deposition system  
Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate...
7384867 Formation of composite tungsten films  
Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and...
7378354 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7368382 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7351628 Atomic layer deposition of CMOS gates with variable work functions  
Structures, systems and methods for transistors having gates with variable work functions formed by atomic layer deposition are provided. One transistor embodiment includes a first source/drain...
7312128 Selective epitaxy process with alternating gas supply  
In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a...
7304004 System and method for forming a gate dielectric  
A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an...
7303991 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7297641 Method to form ultra high quality silicon-containing compound layers  
Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a...
7294208 Apparatus for providing gas to a processing chamber  
A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a unitary, isolatable,...
7279732 Enhanced atomic layer deposition  
A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second...
7279432 System and method for forming an integrated barrier layer  
An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory...
7271077 Deposition methods with time spaced and time abutting precursor pulses  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
7262133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line  
A method for depositing a cap layer over a metal-containing interconnect is provided. In one aspect, the cap layer is formed by introducing a pulse of a metal-containing compound followed by a...
7247581 Methods for treating pluralities of discrete semiconductor substrates  
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are...
7244683 Integration of ALD/CVD barriers with porous low k materials  
A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a...
7241686 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA  
In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor...
7238552 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics  
A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH 3 or B 2 H 6 , followed by introduction of a tungsten containing compound,...
7235492 Low temperature etchant for treatment of silicon-containing surfaces  
In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the...
7235486 Method for forming tungsten materials during vapor deposition processes  
In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a...
7235482 Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology  
An atomic layer deposition method is used to deposit a TiN or TiSiN film having a thickness of about 50 nm or less on a substrat. A titanium precursor which is tetrakis(dimethylamido)titanium...
7228873 Valve design and configuration for fast delivery system  
Embodiments of the invention relate to a substrate processing chamber. In one embodiment a substrate processing chamber includes a chamber body containing a substrate support, a lid assembly...
7220673 Method for depositing tungsten-containing layers by vapor deposition techniques  
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a...
7220312 Methods for treating semiconductor substrates  
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are...
7211508 Atomic layer deposition of tantalum based barrier materials  
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate...
7208413 Formation of boride barrier layers using chemisorption techniques  
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one...
7204886 Apparatus and method for hybrid chemical processing  
A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber...
7183208 Methods for treating pluralities of discrete semiconductor substrates  
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are...
7175713 Apparatus for cyclical deposition of thin films  
An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust...
7150789 Atomic layer deposition methods  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
7128787 Atomic layer deposition method  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
7115529 Atomic layer deposition methods  
A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor...
7115499 Cyclical deposition of tungsten nitride for metal oxide gate electrode  
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a...
7115494 Method and system for controlling the presence of fluorine in refractory metal layers  
A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when...
7112544 Method of atomic layer deposition on plural semiconductor substrates simultaneously  
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are...
7097782 Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly  
In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities...
7094685 Integration of titanium and titanium nitride layers  
Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set...
7092287 Method of fabricating silicon nitride nanodots  
A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon...
7081271 Cyclical deposition of refractory metal silicon nitride  
Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle...
7066194 Valve design and configuration for fast delivery system  
Embodiments of the present invention relate to a method and apparatus for rapid delivery of pulses of one or more reactants to a substrate processing chamber. One embodiment of a valve body...
7041335 Titanium tantalum nitride silicide layer  
Methods and apparatus of forming titanium tantalum silicon nitride (Ti x Ta y (Si)N z ) layers are described. The titanium tantalum silicon nitride (Ti x Ta y (Si)N z ) layer may be formed using a...
7033922 Method and system for controlling the presence of fluorine in refractory metal layers  
A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when...
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