Matches 1 - 17 out of 17
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7429541 Method of forming trench isolation in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7387940 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7368800 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7368366 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7364981 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7361614 Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7294556 Method of forming trench isolation in the fabrication of integrated circuitry  
This invention includes methods of forming a phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one...
7250380 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7250378 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7235459 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7217634 Methods of forming integrated circuitry  
The invention includes methods of forming integrated circuitry. In one implementation, a method of forming an integrated circuit includes forming a plurality of isolation trenches within...
7205248 Method of eliminating residual carbon from flowable oxide fill  
Methods of forming an oxide layer such as high aspect ratio trench isolations, and treating the oxide substrate to remove carbon, structures formed by the method, and devices and systems...
7157385 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7125815 Methods of forming a phosphorous doped silicon dioxide comprising layer  
This invention includes methods of forming phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one...
7012010 Methods of forming trench isolation regions  
In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and...
7009811 Surface planarization processes for the fabrication of magnetic heads and semiconductor devices  
Surface planarization processes for the fabrication of magnetic heads and semiconductor devices are described herein. In one illustrative example, magnetic structures are formed over a substrate...
6794270 Method for shallow trench isolation fabrication and partial oxide layer removal  
A method for forming thoroughly deposited shallow trench isolation. A first oxide layer is formed conformally over the surface of a semiconductor substrate and on a trench thereon with an aspect...
Matches 1 - 17 out of 17