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7429536 |
Methods for forming arrays of small, closely spaced features
Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with...
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7413981 |
Pitch doubled circuit layout
In one embodiment of the present invention, a method for connecting a plurality of bit lines to sense circuitry includes providing a plurality of bit lines extending from a memory array in a first...
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7396781 |
Method and apparatus for adjusting feature size and position
Variations in the pitch of features formed using pitch multiplication are minimized by separately forming at least two sets of spacers. Mandrels are formed and the positions of their sidewalls are...
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7393789 |
Protective coating for planarization
Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed,...
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7390746 |
Multiple deposition for integration of spacers in pitch multiplication process
Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer...
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7368362 |
Methods for increasing photo alignment margins
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines...
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7361569 |
Methods for increasing photo-alignment margins
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines...
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7287325 |
Method of forming interconnect structure or interconnect and via structures using post chemical mechanical polishing
Disclosed are a damascene and dual damascene processes both of which incorporate the use of a release layer to remove trace amounts of residual material between metal interconnect lines. The...
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7268054 |
Methods for increasing photo-alignment margins
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines...
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7253118 |
Pitch reduced patterns relative to photolithography features
Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form...
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7084454 |
Nonvolatile integrated semiconductor memory
A nonvolatile integrated semiconductor memory has an arrangement of layers with a tunnel barrier layer and a charge-storing level. The charge-storing level has a dielectric material which stores...
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7026170 |
Methods of controlling optical properties of a capping insulating layer on memory devices, and system for performing same
The present invention is generally directed to various methods of controlling optical properties of a capping insulating layer on memory devices, and system for performing same. The method includes...
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6808986 |
Method of forming nanocrystals in a memory device
Nanocrystals ( 22 ) are formed in a semiconductor, such as for example, in a memory having a floating gate. A dielectric ( 18 ) overlies a substrate ( 12 ) and is placed in a chemical vapor...
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6784103 |
Method of formation of nanocrystals on a semiconductor structure
Nanocrystals ( 22 ) are formed in a semiconductor, such as for example, in a memory having a floating gate. A dielectric ( 18 ) overlies a substrate ( 12 ) and is placed in a chemical vapor...
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6762454 |
Stacked polysilicon layer for boron penetration inhibition
A semiconductor device formed on a semiconductor substrate having an active region and a method of making the same is disclosed. The semiconductor device includes a stacked polysilicon layer formed...
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