Matches 1 - 42 out of 42
Match Document Document Title
7429515 Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics  
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Gate oxides formed from...
7422635 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces  
The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method...
7410668 Methods, systems, and apparatus for uniform chemical-vapor depositions  
Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is...
7405454 Electronic apparatus with deposited dielectric layers  
An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using...
7388246 Lanthanide doped TiOx dielectric films  
A dielectric film containing lanthanide doped TiO x and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
7387685 Apparatus and method for depositing materials onto microelectronic workpieces  
Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one...
7374964 Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics  
The use of atomic layer deposition (ALD) to form a nanolaminate layered dielectric layer of cerium oxide and aluminum oxide acting as a single dielectric layer with a ratio of approximately two to...
7368014 Variable temperature deposition methods  
A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second...
7344755 Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers  
The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a...
7335396 Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers  
Methods, apparatuses, and systems for controlling mass flow rates and pressures in passageways coupled to reaction chambers are disclosed herein. In one embodiment, a method includes controlling a...
7323231 Apparatus and methods for plasma vapor deposition processes  
One aspect of the invention is directed toward a method of forming a conductive layer on a microfeature workpiece. In one embodiment, the method comprises placing a microfeature workpiece in a...
7312494 Lanthanide oxide / hafnium oxide dielectric layers  
Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more monolayers and a lanthanide oxide layer and a method of fabricating such a dielectric layer produce a...
7288808 Capacitor constructions with enhanced surface area  
A capacitor fabrication method may include forming a first capacitor electrode over a substrate, the first electrode having an inner surface area per unit area and an outer surface area per unit...
7282239 Systems and methods for depositing material onto microfeature workpieces in reaction chambers  
In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas...
7279398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces  
The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first...
7279041 Atomic layer deposition methods and atomic layer deposition tools  
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
7264974 Method for fabricating a low resistance TMR read head  
A method is provided for forming a magnetoresistive read head with an MTJ configuration having an ultra-thin tunneling barrier layer with low resistance and high breakdown strength. The barrier...
7262132 Metal plating using seed film  
A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal...
7258892 Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition  
The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in...
7235138 Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces  
The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of...
7201943 Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material  
A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the...
7192892 Atomic layer deposited dielectric layers  
An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using...
7192824 Lanthanide oxide / hafnium oxide dielectric layers  
Dielectric layers containing an atomic layer deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable...
7189611 Metal plating using seed film  
A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal...
7160577 Methods for atomic-layer deposition of aluminum oxides in integrated circuits  
The present inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary method entails providing an outer chamber...
7135369 Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9  
An atomic layer deposited ZrAl x O y dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
7112503 Enhanced surface area capacitor fabrication methods  
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
7108747 Method for growing oxide thin films containing barium and strontium  
The present invention relates to a method for growing oxide thin films which contain barium and/or strontium. According to the method, such thin films are made by the ALE technique by using as...
7105065 Metal layer forming methods and capacitor electrode forming methods  
A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the...
7094704 Method of plasma etching of high-K dielectric materials  
A method of etching high dielectric constant materials using a halogen gas, a reducing gas and an etch rate control gas chemistry.
7094690 Deposition methods and apparatuses providing surface activation  
A deposition method includes, at a first temperature, contacting a substrate with a surface activation agent and adsorbing a first layer over the substrate. At a second temperature greater than the...
7087535 Deposition methods  
A deposition method includes contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate. At least a part of the substrate is...
7084078 Atomic layer deposited lanthanide doped TiOx dielectric films  
A dielectric film containing atomic layer deposited lanthanide doped TiO x and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide...
7071118 Method and apparatus for fabricating a conformal thin film on a substrate  
A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic...
7056806 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces  
The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first...
7045430 Atomic layer-deposited LaAlO3 films for gate dielectrics  
A dielectric film containing LaAlO 3 and method of fabricating a dielectric film contained LaAlO 3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable...
7037574 Atomic layer deposition for fabricating thin films  
An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses...
6916374 Atomic layer deposition methods and atomic layer deposition tools  
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
6896730 Atomic layer deposition apparatus and methods  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A fixed volume first precursor gas charge is provided within a gas flow...
6861355 Metal plating using seed film  
A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal...
6852167 Methods, systems, and apparatus for uniform chemical-vapor depositions  
Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is...
6596602 Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVD  
The method for fabricating a semiconductor device in accordance with the present invention has the steps of: forming a metal film as a lower electrode of a capacitor on a semiconductor substrate,...
Matches 1 - 42 out of 42