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7368067 |
P-type zinc oxide semiconductor film and process for preparation thereof
A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained...
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7176054 |
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique....
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7172813 |
Zinc oxide crystal growth substrate
A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a...
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7161173 |
P-type group II-VI semiconductor compounds
A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants....
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7141489 |
Fabrication of p-type group II-VI semiconductors
Commercially viable methods of manufacturing p-type group II–VI semiconductor materials are disclosed. A thin film of group II–VI semiconductor atoms is deposited on a self supporting substrate...
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7098573 |
Frequency-tunable resonator
A frequency-tunable resonator comprises a basic element having at least one piezoelectric layer and at least one semiconducting layer. The electrodes, formed on main surface situated opposite one...
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7064346 |
Transistor and semiconductor device
In an npn-type transistor, the emitter 42 and the collector 43 are formed of an n-type transparent semiconductor, and the base 41 is formed by a p-type transparent semiconductor. The base...
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7022182 |
Ferromagnetic p-type single-crystal zinc oxide material and manufacturing method thereof
The present invention provides a single-crystal ZnO thin film having a high ferromagnetic transition temperature. In one aspect of the present invention, the ZnO thin film comprises a ferromagnetic...
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6987029 |
ZnO based compound semiconductor light emitting device and method for manufacturing the same
A light emitting device includes a silicon substrate ( 1 ), a silicon nitride film ( 2 ) formed on the surface of the silicon substrate ( 1 ), at least an n-type layer ( 3 ), ( 4 ) and a p-type...
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6896731 |
P-type single crystal zinc-oxide having low resistivity and method for preparation thereof
The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than...
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6887736 |
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique....
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6794690 |
Group III nitride compound semiconductor light-emitting element
A Group III nitride compound semiconductor light-emitting element (flip chip type light-emitting element) provided with a p-side electrode and an n-side electrode formed on one surface side,...
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6727522 |
Transistor and semiconductor device
A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent...
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6674098 |
ZnO compound semiconductor light emitting element
A light emitting device includes a silicon substrate ( 1 ), a silicon nitride film ( 2 ) formed on the surface of the silicon substrate ( 1 ), at least an n-type layer ( 3 ), ( 4 ) and a p-type...
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6624441 |
Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
A semiconductor structure for providing an epitaxial zinc oxide layer having p-type conduction for semiconductor device manufacture and methods of depositing the p-type zinc oxide layer. A zinc...
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6527858 |
P-type ZnO single crystal and method for producing the same
A p-type ZnO single crystal having a low resistance; and a method for producing the same providing a substrate ( 2 ) in a vacuum chamber ( 1 ), supplying to the substrate ( 2 ) atomic gases of Zn,...
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