|
Match
|
Document |
Document Title |
|
|
7427819 |
Film-bulk acoustic wave resonator with motion plate and method
An apparatus and method for measuring a target environmental variable (TEV) that employs a film-bulk acoustic resonator with motion plate. The film-bulk acoustic resonator (FBAR) includes an...
|
|
|
7425787 |
Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator
Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and an...
|
|
|
7424772 |
Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth
The band-pass filter has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of...
|
|
|
7423503 |
Acoustic galvanic isolator incorporating film acoustically-coupled transformer
Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and, connected between...
|
|
|
7420320 |
Piezoelectric thin film device and method for manufacturing the same
A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is...
|
|
|
7408428 |
Temperature-compensated film bulk acoustic resonator (FBAR) devices
The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack. The FBAR stack comprises an FBAR and a temperature-compensating element. The FBAR is characterized by...
|
|
|
7400217 |
Decoupled stacked bulk acoustic resonator band-pass filter with controllable pass bandwith
The band-pass filter has an upper film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic...
|
|
|
7391286 |
Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters
A film acoustically-coupled transformer (FACT) has a first and a second stacked bulk acoustic resonator (SBAR 1 , SBAR 2 ). Each SBAR has a stacked pair of film bulk acoustic resonators (FBARs)...
|
|
|
7391285 |
Film acoustically-coupled transformer
One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR...
|
|
|
7388455 |
Film acoustically-coupled transformer with increased common mode rejection
The film acoustically-coupled transformer (FACT) has a first and second decoupled stacked bulk acoustic resonators (DSBARs). Each DSBAR has a lower film bulk acoustic resonator (FBAR), an upper...
|
|
|
7388454 |
Acoustic resonator performance enhancement using alternating frame structure
Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is...
|
|
|
7369013 |
Acoustic resonator performance enhancement using filled recessed region
An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a fill region. The first electrode is adjacent the substrate, and the...
|
|
|
7367095 |
Method of making an acoustically coupled transformer
Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an...
|
|
|
7362198 |
Pass bandwidth control in decoupled stacked bulk acoustic resonator devices
The decoupled stacked bulk acoustic resonator (DSBAR) device has a lower film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and an acoustic decoupler between the FBARs....
|
|
|
7358831 |
Film bulk acoustic resonator (FBAR) devices with simplified packaging
The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate,...
|
|
|
7332985 |
Cavity-less film bulk acoustic resonator (FBAR) devices
The film bulk acoustic resonator (FBAR) device comprises a substrate, an acoustic Bragg reflector over the substrate, a piezoelectric element over the acoustic Bragg reflector, and a remote-side...
|
|
|
7323805 |
Piezoelectric thin film device and method for manufacturing the same
A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is...
|
|
|
7312675 |
Vertically separated acoustic filters and resonators
An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated...
|
|
|
7299529 |
Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition
A process comprising, in a vacuum, depositing a bottom electrode layer and a piezoelectric layer over a cavity in a substrate, the cavity being filled with a sacrificial material, patterning and...
|
|
|
7281304 |
Method for fabricating a film bulk acoustic resonator
A method for fabricating a film bulk acoustic resonator (FBAR) includes depositing a dielectric layer on a substrate, providing a sacrificial layer on part of the dielectric layer; providing a...
|
|
|
7202560 |
Wafer bonding of micro-electro mechanical systems to active circuitry
A single integrated wafer package includes a micro electromechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS...
|
|
|
7161448 |
Acoustic resonator performance enhancements using recessed region
An acoustic resonator includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a recessed region. The substrate has a first surface. The first electrode...
|
|
|
7114252 |
Large scale simultaneous circuit encapsulating apparatus
A plurality of individual circuits are formed on a substrate. Each of the individual circuits is formed with electrical contacts. A spacer is sealed onto the substrate, the spacer peripherally...
|
|
|
7109826 |
Tapered electrode in an acoustic resonator
An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AlN), is formed over a bottom electrode having a tapered end....
|
|
|
7098758 |
Acoustically coupled thin-film resonators having an electrode with a tapered edge
Acoustically coupled resonators include a first and a second acoustic resonator. Both the first and second acoustic resonators include a first electrode, a layer of piezoelectric material, and a...
|
|
|
7038559 |
Vertically separated acoustic filters and resonators
An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated...
|
|
|
6954121 |
Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method
An apparatus such as a thin film resonator has a bottom electrode, a top electrode, and a composite layer between the two electrodes. The composite layer includes a piezoelectric (PZ) layer having...
|
|
|
6936837 |
Film bulk acoustic resonator
A thin film bulk acoustic resonator comprises a substrate ( 12 ) of a silicon single crystal, a base film ( 13 ) formed on the substrate ( 12 ) and composed of a dielectric film mainly containing...
|
|
|
6930437 |
Film bulk acoustic resonator
A film bulk acoustic resonator is fabricated in the following manner. First, a base layer is formed on an insulating substrate. Then, a resonator assembly is formed on the base layer. The resonator...
|
|
|
6924717 |
Tapered electrode in an acoustic resonator
An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AIN), is formed over a bottom electrode having a tapered end....
|
|
|
6905970 |
Method for making a thin film bulk acoustic-wave resonator
A method for making a thin film bulk acoustic-wave resonator (FBAR). First, define the cavity area on a substrate. Secondly, partially etch the patterned cavity area as a presacrificial layer....
|
|
|
6842088 |
Thin film acoustic resonator and method of producing the same
A pit ( 52 ) is formed in a substrate comprising a silicon wafer ( 51 ) on a surface of which a silicon oxide thin layer ( 53 ) is formed. A sandwich structure ( 60 ) comprising a piezoelectric...
|
|
|
6756296 |
Method for lithographic processing on molecular monolayer and multilayer thin films
Methods for making electronic devices where a molecular monolayer or multilayer is sandwiched between top and bottom electrodes at electrode intersections. The molecular layer has an electrical...
|
|
|
6732415 |
Film bulk acoustic resonator and method of making the same
A film bulk acoustic resonator is fabricated in the following manner. First, a base layer is formed on an insulating substrate. Then, a resonator assembly is formed on the base layer. The resonator...
|
|
|
6714102 |
Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method
A method for fabricating an acoustic resonator, for example a Thin Film Bulk Acoustic Resonators (FBAR), on a substrate. A depression is etched and filled with sacrificial material. The FBAR is...
|