Matches 1 - 26 out of 26
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7411237 Lanthanum hafnium oxide dielectrics  
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety...
7410917 Atomic layer deposited Zr-Sn-Ti-O films using TiI4  
Various structures having a dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI 4 precursor and a method of fabricating structures having such a dielectric...
7405454 Electronic apparatus with deposited dielectric layers  
An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using...
7402876 Zr— Sn—Ti—O films  
A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI 4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer...
EP1916253A1 New group V metal containing precursors and their use for metal containing film deposition  
Compound of the formula (Ia): or of the formula (Ib): These new precursors are useful for pure metal, metallic oxide, oxynitride, nitride and/or silicide film deposition to make electrodes...
7259434 Highly reliable amorphous high-k gate oxide ZrO2  
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Also shown is a gate...
7255128 System and method for detecting flow in a mass flow controller  
Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to...
7235501 Lanthanum hafnium oxide dielectrics  
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is formed as a structure of one or more monolayers, and methods of fabricating such dielectric...
7208804 Crystalline or amorphous medium-K gate oxides, Y203 and Gd203  
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Also shown is a gate...
7205620 Highly reliable amorphous high-k gate dielectric ZrOxNy  
A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Gate...
7205218 Method including forming gate dielectrics having multiple lanthanide oxide layers  
A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a...
7183186 Atomic layer deposited ZrTiO4 films  
After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other...
7135369 Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9  
An atomic layer deposited ZrAl x O y dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than...
7129553 Lanthanide oxide/hafnium oxide dielectrics  
Dielectric layers containing a chemical vapor deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable...
7114404 System and method for detecting flow in a mass flow controller  
Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to...
7101813 Atomic layer deposited Zr-Sn-Ti-O films  
A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness...
7081421 Lanthanide oxide dielectric layer  
A ruthenium gate for a lanthanide oxide dielectric layer and a method of fabricating such a combination gate and dielectric layer produce a reliable structure for use in a variety of electronic...
7049192 Lanthanide oxide / hafnium oxide dielectrics  
Dielectric layers containing a chemical vapor deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable...
7045430 Atomic layer-deposited LaAlO3 films for gate dielectrics  
A dielectric film containing LaAlO 3 and method of fabricating a dielectric film contained LaAlO 3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable...
6958302 Atomic layer deposited Zr-Sn-Ti-O films using TiI4  
A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI 4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer...
6900122 Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics  
A praseodymium (Pr) gate oxide and method of fabricating same that produces a high-quality and ultra-thin equivalent oxide thickness as compared to conventional SiO 2 gate oxides are provided. The...
6844203 Gate oxides, and methods of forming  
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Also shown is a gate...
6828256 Methods for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands  
A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the...
6709927 Process for treating ONO dielectric film of a floating gate memory cell  
A process to deposit a silicon dioxide layer on a silicon nitride layer for an ONO stack of a floating gate transistor. Silicon dioxide is deposited on a silicon nitride layer and annealed in a...
6682602 Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands  
A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the...
6627465 System and method for detecting flow in a mass flow controller  
Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to...
Matches 1 - 26 out of 26