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7429516 Tungsten nitride atomic layer deposition processes  
In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and...
7429402 Ruthenium as an underlayer for tungsten film deposition  
In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum...
7422635 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces  
The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method...
7416979 Deposition methods for barrier and tungsten materials  
Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the...
7405454 Electronic apparatus with deposited dielectric layers  
An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using...
7405158 Methods for depositing tungsten layers employing atomic layer deposition techniques  
In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in...
7405143 Method for fabricating a seed layer  
The present invention produces a seed layer for the deposition of copper for metallizing integrated circuits. A diffusion barrier is deposited upon the wafer. In one embodiment of the invention, a...
7402518 Atomic layer deposition methods  
A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor...
7399388 Sequential gas flow oxide deposition technique  
A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in...
7387685 Apparatus and method for depositing materials onto microelectronic workpieces  
Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one...
7384867 Formation of composite tungsten films  
Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and...
7378354 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7368382 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7368014 Variable temperature deposition methods  
A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second...
7344755 Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers  
The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a...
7335396 Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers  
Methods, apparatuses, and systems for controlling mass flow rates and pressures in passageways coupled to reaction chambers are disclosed herein. In one embodiment, a method includes controlling a...
7323231 Apparatus and methods for plasma vapor deposition processes  
One aspect of the invention is directed toward a method of forming a conductive layer on a microfeature workpiece. In one embodiment, the method comprises placing a microfeature workpiece in a...
7303991 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7282239 Systems and methods for depositing material onto microfeature workpieces in reaction chambers  
In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas...
7279432 System and method for forming an integrated barrier layer  
An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory...
7279398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces  
The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first...
7279041 Atomic layer deposition methods and atomic layer deposition tools  
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
7271077 Deposition methods with time spaced and time abutting precursor pulses  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
7262133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line  
A method for depositing a cap layer over a metal-containing interconnect is provided. In one aspect, the cap layer is formed by introducing a pulse of a metal-containing compound followed by a...
7262132 Metal plating using seed film  
A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal...
7258892 Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition  
The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in...
7238552 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics  
A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH 3 or B 2 H 6 , followed by introduction of a tungsten containing compound,...
7235486 Method for forming tungsten materials during vapor deposition processes  
In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a...
7235138 Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces  
The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of...
7220673 Method for depositing tungsten-containing layers by vapor deposition techniques  
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a...
7211508 Atomic layer deposition of tantalum based barrier materials  
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate...
7211144 Pulsed nucleation deposition of tungsten layers  
A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing...
7208413 Formation of boride barrier layers using chemisorption techniques  
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one...
7192888 Low selectivity deposition methods  
A deposition method includes forming a nucleation layer over a substrate, forming a layer of a first substance at least one monolayer thick chemisorbed on the nucleation layer, and forming a layer...
7189611 Metal plating using seed film  
A seed film and methods incorporating the seed film in semiconductor applications is provided. The seed film includes one or more noble metal layers, where each layer of the one or more noble metal...
7157177 Porous fuel cell electrode structures having conformal electrically conductive layers thereon  
The present invention discloses porous fuel cell electrode structures, assemblies, and systems having one or more conformal metallic layers selectively deposited on one or more pore surfaces, as...
7154354 High permeability layered magnetic films to reduce noise in high speed interconnection  
A structure for magnetically shielded transmission lines for use with high speed integrated circuits having an improved signal to noise ratio, and a method for forming the same are disclosed. At...
7150789 Atomic layer deposition methods  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
7128787 Atomic layer deposition method  
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
7115529 Atomic layer deposition methods  
A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor...
7115499 Cyclical deposition of tungsten nitride for metal oxide gate electrode  
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a...
7115494 Method and system for controlling the presence of fluorine in refractory metal layers  
A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when...
7097886 Deposition process for high aspect ratio trenches  
A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the...
7097782 Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly  
In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities...
7094690 Deposition methods and apparatuses providing surface activation  
A deposition method includes, at a first temperature, contacting a substrate with a surface activation agent and adsorbing a first layer over the substrate. At a second temperature greater than the...
7094685 Integration of titanium and titanium nitride layers  
Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set...
7087535 Deposition methods  
A deposition method includes contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate. At least a part of the substrate is...
7087497 Low-thermal-budget gapfill process  
A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An...
7056806 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces  
The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first...
7049226 Integration of ALD tantalum nitride for copper metallization  
A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The...
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