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7440339 Stacked columnar 1T-nMTj MRAM structure and its method of formation and operation  
This invention relates to an MRAM array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher...
7405966 Magnetic tunneling junction antifuse device  
An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft...
7405962 Magnetic random access memory  
MTJ elements are accumulated in a plurality of portions on a semiconductor substrate. A first conductive line functioning as a read line and extending in the X direction is connected to pin layers...
7402350 Highly tetrahedral amorphous carbon coatings and systems and methods for their production  
The invention provides systems and methods for the deposition of an improved diamond-like carbon material, particularly for the production of magnetic recording media. The diamond-like carbon...
7379366 Thin film magnetic memory device capable of conducting stable data read and write operations  
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied...
7372714 Methods and memory structures using tunnel-junction device as control element  
A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise...
7339811 Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation  
This invention relates to an MRAM array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher...
7336529 Thin film magnetic memory device storing program information efficiently and stably  
Each of program cell and memory cells includes a magnetic storage portion of the same configuration. The program cell further includes a state change portion. That is, the program cell has the same...
7330367 Stacked 1T-nMTJ MRAM structure  
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and...
7315468 Thin film magnetic memory device for conducting data write operation by application of a magnetic field  
A peripheral circuitry is provided adjacent to a memory array and conducts read and write operations from and to the memory array. A power supply voltage line and a ground line for supplying an...
7313042 Thin film magnetic memory device having an improved read operation margin  
A data bus is precharged to a precharge voltage before data read operation. In the data read operation, the data bus thus precharged is electrically coupled to the same voltage as the precharge...
7307896 Detection of row-to-row shorts and other row decode defects in memory devices  
A system and method to detect row-to-row shorts and other row decode defects in memory devices and other electronic devices having a similar data storage functionality is disclosed. A selective...
7295465 Thin film magnetic memory device reducing a charging time of a data line in a data read operation  
During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with...
7254057 Magnetic thin-film memory device for quick and stable reading data  
An MTJ memory cell is independently provided with a write word line and a read word line used for data write and data read. By separately arranging read word lines every two regions formed by...
7233519 Thin film magnetic memory device for conducting data write operation by application of a magnetic field  
A peripheral circuitry is provided adjacent to a memory array and conducts read and write operations from and to the memory array. A power supply voltage line and a ground line for supplying an...
7209382 Magnetic random access memory  
In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered...
7209378 Columnar 1T-N memory cell structure  
A memory array architecture incorporates certain advantages from both cross-point and 1T-1Cell architectures during reading operations. The fast read-time and higher signal to noise ratio of the...
7183141 Reversible field-programmable electric interconnects  
A programmable interconnect structure and method of operating the same provides a programmable interconnection between electrical contacts. The interconnect includes material that has a reversibly...
7176065 Magnetic tunneling junction antifuse device  
An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft...
7167389 Magnetic random access memory with a reference cell array and dummy cell arrays  
Memory cell arrays include a data cell array, a reference cell array and a dummy cell array. First read word lines are connected respectively to the gates of the read selection switches of the data...
7151691 Magnetic random access memory  
MTJ elements are accumulated in a plurality of portions on a semiconductor substrate. A first conductive line functioning as a read line and extending in the X direction is connected to pin layers...
7133310 Thin film magnetic memory device having a highly integrated memory array  
Read word lines and write word lines are provided corresponding to the respective MTJ (Magnetic Tunnel Junction) memory cell rows, and bit lines and reference voltage lines are provided...
7116595 Thin film magnetic memory device having a magnetic tunnel junction  
Bit lines and source lines are precharged to a power supply voltage before data read operation. In the data read operation, a corresponding bit line is coupled to a data bus as well as a...
7113420 Molecular memory cell  
A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system....
7110290 Thin film magnetic memory device storing program information efficiently and stably  
Each of program cell and memory cells includes a magnetic storage portion of the same configuration. The program cell further includes a state change portion. That is, the program cell has the same...
7102922 Thin film magnetic memory device capable of conducting stable data read and write operations  
A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied...
7042761 Thin film magnetic memory device suppressing internal magnetic noises  
A write drive circuit provided for every write word line supplies a data write current to a write word line of a selected row, and supplies a magnetic-field canceling current to a write word line...
7023743 Stacked columnar 1T-nMTJ structure and its method of formation and operation  
This invention relates to an array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher signal...
7012276 Organic thin film Zener diodes  
A thin film Zener diode, comprising: (a) a thin film comprised of at least one layer including at least one organic material; and (b) first and second electrodes in contact with respective...
7006373 Thin film magnetic memory device with memory cells including a tunnel magnetic resistive element  
A data bus is precharged to a precharge voltage before data read operation. In the data read operation, the data bus thus precharged is electrically coupled to the same voltage as the precharge...
6999341 Thin-film magnetic memory device with memory cells having magnetic tunnel junction  
A memory array is divided into a plurality of memory cell blocks in m rows and n columns. A write digit line for each of the memory cell blocks is independent of those for the other memory cell...
6996002 Thin film magnetic memory device provided with magnetic tunnel junctions  
A driver transistor supplying a data write current to a write digit line is arranged to have its gate length direction along the same direction with a write digit line. Further, the write digit...
6992935 Nonvolatile memory device efficiently changing functions of field programmable gate array at high speed  
A switch section for changing the function of an FPGA is provided with a data latch circuit used for connection control. The data latch circuit includes program sections in which program data is...
6990024 Thin film magnetic memory device having data read current tuning function  
A constant current supply circuit generates a constant current according to a control voltage. A data read current passing through a tunneling magneto-resistance element constituting a memory cell...
6990012 Magnetic memory device  
The present invention provides a magnetic memory. In one embodiment, the magnetic memory includes a first line having a first cross-sectional area. A second line is provided having a second...
6975534 Thin film magnetic memory device having a highly integrated memory array  
Read word lines and write word lines are provided corresponding to the respective MTJ (Magnetic Tunnel Junction) memory cell rows, and bit lines and reference voltage lines are provided...
6972991 Thin film magnetic memory device suppressing internal magnetic noises  
A write drive circuit provided for every write word line supplies a data write current to a write word line of a selected row, and supplies a magnetic-field canceling current to a write word line...
6970377 Thin film magnetic memory device for conducting data write operation by application of a magnetic field  
A peripheral circuitry is provided adjacent to a memory array and conducts read and write operations from and to the memory array. A power supply voltage line and a ground line for supplying an...
6940748 Stacked 1T-nMTJ MRAM structure  
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and...
6919613 Magnetic tunneling junction antifuse device  
An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft...
6919595 Semiconductor memory device  
A magnetic memory device capable of achieving high reliability and superior operation characteristics of tunneling magneto-resistive (TMR) elements is provided. This magnetic memory device includes...
6917540 Thin film magnetic memory device storing program information efficiently and stably  
Each of program cell and memory cells includes a magnetic storage portion of the same configuration. The program cell further includes a state change portion. That is, the program cell has the same...
6882566 Stacked 1T-nMTJ MRAM structure  
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and...
6882553 Stacked columnar resistive memory structure and its method of formation and operation  
This invention relates to a resistive memory array architecture which incorporates certain advantages from both cross-point and one transistor per cell architectures during reading operations. The...
6876575 Thin film magnetic memory device having a magnetic tunnel junction  
Bit lines and source lines are precharged to a power supply voltage before data read operation. In the data read operation, a corresponding bit line is coupled to a data bus as well as a...
6873540 Molecular memory cell  
A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system....
6870757 Thin film magnetic memory device applying a magnetic field to write data  
Each write word line has one end connected by a write drive circuit to a power supply voltage selectively and the other end to a ground voltage. The write drive circuit is staggered in arrangement...
6868005 Thin film magnetic memory device provided with magnetic tunnel junctions  
A driver transistor supplying a data write current to a write digit line is arranged to have its gate length direction along the same direction with a write digit line. Further, the write digit...
6864522 Memory device  
A memory storage and retrieval device containing (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; (c) a layer stack intermediate the first and second...
6858481 Memory device with active and passive layers  
A memory including memory cells having active and passive layers may store multiple information bits. The active layer may include an organic polymer that has a variable resistance based on the...
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