Matches 1 - 28 out of 28
Match Document Document Title
7372160 Barrier film deposition over metal for reduction in metal dishing after CMP  
A protective barrier layer, formed of a material such as titanium or titanium nitride for which removal by chemical mechanical polishing (CMP) is primarily mechanical rather than primarily...
7327034 Compositions for planarization of metal-containing surfaces using halogens and halide salts  
A planarization method includes providing a metal-containing surface (preferably, a Group VIII metal-containing surface, and more preferably a platinum-containing surface) and positioning it for...
7279423 Forming a copper diffusion barrier  
Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by...
7268383 Capacitor and method of manufacturing a capacitor  
Semiconductor devices having capacitors formed of a high-k dielectric and a pair of interconnections on either side of the dielectric are provided along with methods of fabricating such...
7244678 Methods for planarization of Group VIII metal-containing surfaces using complexing agents  
A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing...
7232736 Semiconductor devices with capacitors of metal/insulator/metal structure and methods for forming the same  
Semiconductor devices with copper interconnections and MIM capacitors and methods of fabricating the same are provided. The device includes a lower electrode composed of a first copper layer. A...
7151288 Semiconductor device and method of manufacturing the same  
A semiconductor device comprises a semiconductor substrate, a conductive plug electrically connected to the semiconductor substrate, a silicon carbide film provided on the conductive plug, a metal...
7121926 Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article  
A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the...
7105400 Manufacturing method of semiconductor device  
There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina...
7053462 Planarization of metal container structures  
A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a...
7049237 Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases  
A planarization method includes providing a second and/or third Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing...
7002196 Ferroelectric capacitor devices and FeRAM devices  
A ferroelectric capacitor device, such as an FeRAM device is formed of a substrate having one or more contact plugs extending therethrough, and a first interlayer dielectric layer formed on the...
6884723 Methods for planarization of group VIII metal-containing surfaces using complexing agents  
A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing...
6871773 Composite metallic ultrafine particles and process for producing the same  
The present invention relates to composite metallic ultrafine particles which have excellent dispersion stability and can be produced on an industrial scale, and a process for producing the same,...
6861353 Methods for planarization of metal-containing surfaces using halogens and halide salts  
A planarization method includes providing a metal-containing surface (preferably, a Group VIII metal-containing surface, and more preferably a platinum-containing surface) and positioning it for...
6855977 Memory device with a self-assembled polymer film and method of making the same  
A memory device with multi-bit memory cells and method of making the same uses self-assembly to provide polymer memory cells on the contacts to a transistor array. Employing self-assembly produces...
6849959 Method of fabricating semiconductor device  
A method of fabricating a semiconductor device according to the invention comprises forming a capacitor comprising a lower electrode formed on a semiconductor substrate, a capacitive insulator made...
6825116 Method for removing structures  
A method for removing structures from a substrate is described. The method includes providing a substrate that has the structures that must be removed, applying a sacrifice layer, and removing the...
6790780 Fabrication of 3-D capacitor with dual damascene process  
A three dimensional capacitor fabricated as part of a dual damascene process is disclosed. The capacitor structure comprises two barrier metal layers separated by a high k dielectric and is formed...
6743395 Composite metallic ultrafine particles and process for producing the same  
The present invention relates to composite metallic ultrafine particles which have excellent dispersion stability and can be produced on an industrial scale, and a process for producing the same,...
6730592 Methods for planarization of metal-containing surfaces using halogens and halide salts  
A planarization method includes providing a metal-containing surface (preferably, a Group VIII metal-containing surface, and more preferably a platinum-containing surface) and positioning it for...
6706607 Method for fabricating capacitor in semiconductor device  
The present invention relates to a method for fabricating a capacitor in a semiconductor device; and, more particularly, to a method for fabricating a capacitor capable of stably forming a nitride...
EP1376662A2 Semiconductor device and method for fabricating the same  
An interlayer insulating film is formed on a semiconductor substrate on which a transistor has been formed, and an adhesion layer made from a metal oxide not oriented is formed on the interlayer...
6642563 Semiconductor memory including ferroelectric gate capacitor structure, and method of fabricating the same  
A semiconductor memory including a ferroelectric gate capacitor structure includes an insulating interlayer formed on the surface of a semiconductor substrate. The insulating interlayer includes a...
6642552 Inductive storage capacitor  
A device includes an element (e.g. in the shape of a sleeve) and a core located in an interior volume defined by the element and at least partially surrounded by the element. The element has two...
6635529 Method of fabricating semiconductor device  
A method of fabricating a semiconductor device according to the invention includes forming a capacitor comprising a lower electrode formed on a semiconductor substrate, a capacitive insulator made...
6579789 Method for fabricating metal wiring and the metal wiring  
In the method for fabricating a metal wiring, an insulation film is formed on a semiconductor substrate. The insulation film has a contact hole exposing the semiconductor substrate. A Ti—Si film...
6524912 Planarization of metal container structures  
A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a...
Matches 1 - 28 out of 28