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7439191 Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications  
A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a...
7431767 Apparatus and method for growth of a thin film  
An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one...
7429516 Tungsten nitride atomic layer deposition processes  
In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and...
7429402 Ruthenium as an underlayer for tungsten film deposition  
In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum...
7429361 Method and apparatus for providing precursor gas to a processing chamber  
In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a...
7422635 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces  
The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method...
7416979 Deposition methods for barrier and tungsten materials  
Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the...
7410671 Sequential chemical vapor deposition  
The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the...
7405158 Methods for depositing tungsten layers employing atomic layer deposition techniques  
In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in...
7405143 Method for fabricating a seed layer  
The present invention produces a seed layer for the deposition of copper for metallizing integrated circuits. A diffusion barrier is deposited upon the wafer. In one embodiment of the invention, a...
7402210 Apparatus and method for hybrid chemical processing  
In one embodiment, an apparatus for performing an atomic layer deposition process is provided which includes a chamber body having a substrate support, a lid assembly attached to the chamber body,...
7399388 Sequential gas flow oxide deposition technique  
A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in...
7399357 Atomic layer deposition using multilayers  
A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In...
7396565 Multiple precursor cyclical deposition system  
Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate...
7393561 Method and apparatus for layer by layer deposition of thin films  
A method of increasing ALP briefly, a preferred embodiment of the present invention includes a method of increasing ALP throughput by continuously modulating gas flow in a reactor to achieve layer...
7387685 Apparatus and method for depositing materials onto microelectronic workpieces  
Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one...
7384867 Formation of composite tungsten films  
Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and...
7365005 Method for filling of a recessed structure of a semiconductor device  
This invention relates to process sequence by high-speed atomic layer chemical vapor processing that includes deposition for diffusion barriers in the etched features on substrate followed by gap...
7361387 Plasma enhanced pulsed layer deposition  
A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable...
7352048 Integration of barrier layer and seed layer  
The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer....
7344755 Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers  
The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a...
7335396 Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers  
Methods, apparatuses, and systems for controlling mass flow rates and pressures in passageways coupled to reaction chambers are disclosed herein. In one embodiment, a method includes controlling a...
7323231 Apparatus and methods for plasma vapor deposition processes  
One aspect of the invention is directed toward a method of forming a conductive layer on a microfeature workpiece. In one embodiment, the method comprises placing a microfeature workpiece in a...
7318869 Variable gas conductance control for a process chamber  
A deposition system in accordance with one embodiment of the present invention includes a process chamber, a stationary pedestal for supporting a substrate in the process chamber, and a moveable...
7312128 Selective epitaxy process with alternating gas supply  
In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a...
7304004 System and method for forming a gate dielectric  
A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an...
7294208 Apparatus for providing gas to a processing chamber  
A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a unitary, isolatable,...
7282239 Systems and methods for depositing material onto microfeature workpieces in reaction chambers  
In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas...
7279732 Enhanced atomic layer deposition  
A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second...
7279432 System and method for forming an integrated barrier layer  
An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory...
7279398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces  
The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first...
7271072 Stud electrode and process for making same  
A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically...
7270709 Method and apparatus of generating PDMAT precursor  
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having...
7262133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line  
A method for depositing a cap layer over a metal-containing interconnect is provided. In one aspect, the cap layer is formed by introducing a pulse of a metal-containing compound followed by a...
7258892 Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition  
The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in...
7247581 Methods for treating pluralities of discrete semiconductor substrates  
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are...
7244683 Integration of ALD/CVD barriers with porous low k materials  
A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a...
7241686 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA  
In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor...
7238552 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics  
A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH 3 or B 2 H 6 , followed by introduction of a tungsten containing compound,...
7235492 Low temperature etchant for treatment of silicon-containing surfaces  
In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the...
7235486 Method for forming tungsten materials during vapor deposition processes  
In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a...
7235138 Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces  
The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of...
7230292 Stud electrode and process for making same  
A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically...
7228873 Valve design and configuration for fast delivery system  
Embodiments of the invention relate to a substrate processing chamber. In one embodiment a substrate processing chamber includes a chamber body containing a substrate support, a lid assembly...
7220673 Method for depositing tungsten-containing layers by vapor deposition techniques  
In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a...
7220669 Thin films for magnetic device  
Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction...
7220451 Process for producing metal thin films by ALD  
Electrically conductive noble metal thin films can be deposited on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a...
7220312 Methods for treating semiconductor substrates  
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are...
7211508 Atomic layer deposition of tantalum based barrier materials  
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate...
7208413 Formation of boride barrier layers using chemisorption techniques  
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one...
Matches 1 - 50 out of 137 1 2 3 >