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7449345 Capping structure for enhancing dR/R of the MTJ device  
An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that...
7443637 Giant magnetoresistance sensor with side longitudinal bias stacks and method for forming same  
A giant magnetoresistance (GMR) sensor with side longitudinal bias (LB) stacks is proposed for magnetic recording at ultrahigh densities. The GMR sensor extends from a read region into two side...
7443636 Magnetic head having layered film with tilted crystalline grain structure  
Embodiments of the invention implement a construction capable of reconciling high read output with high stability by improving the structures of magnetic films. In one embodiment, an inclined...
7440207 Magnetic-transfer method, magnetic recording medium, and magnetic recording device  
Provided is a method of magnetic transfer. The method includes initially DC-magnetizing a transfer-recipient disc in a circumferential direction, by applying a magnetic field to the...
7427514 Passivated magneto-resistive bit structure and passivation method therefor  
A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch...
7400475 Patterned, synthetic longitudinally exchange biased GMR sensor  
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing...
7394625 Structure/method to form bottom spin valves for ultra-high density  
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an...
7375405 Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element  
A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device,...
7365948 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film  
An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the...
7358553 System and method for reducing shorting in memory cells  
An MRAM device includes an array of magnetic memory cells having an upper conductive layer and a lower conductive layer separated by a barrier layer. To reduce the likelihood of electrical shorting...
7357995 Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance  
Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers...
7354664 Magnetically soft, high saturation magnetization laminate of iron-cobalt-nitrogen and iron-nickel for perpendicular media underlayers  
A magnetic disk has a soft magnetic underlayer comprising a first layer containing NiFe having a concentration of iron that is at least thirty percent and not more than seventy percent; a second...
7351483 Magnetic tunnel junctions using amorphous materials as reference and free layers  
Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous...
7348647 Digital memory cell device  
A digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system, which is...
7333307 Double layer longitudinal bias structure  
It is necessary to stabilize the free layer of GMR or TMR devices by providing a longitudinal bias field. As read tracks become very narrow, this field can drastically reduce the strength of the...
7333306 Magnetoresistive spin valve sensor with tri-layer free layer  
A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the...
7333303 Magnetoresistive device supplying sense current thereto dependent upon a relationship existent between the thickness of the fixed layer and its magnetization  
Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording...
7333302 GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance  
A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated). The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline...
7325295 Structure/method to form bottom spin valves for ultra-high density  
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an...
7300711 Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials  
Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a...
7283337 Abutted exchange bias design for sensor stabilization  
A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λ S ) value. Compressive...
7280029 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film  
A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled...
7275304 Method of forming a hard bias structure in a magnetic head  
A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λ S ) value. Compressive...
7273667 Longitudinal multi-layer magnetic recording medium  
A magnetic recording medium capable of attaining high in-plane recording density of 100 Mbits or more per 1 mm 2 is provided. Magnetic recording medium is provided in which underlayers, a first...
7271698 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film  
A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled...
7270896 High performance magnetic tunnel barriers with amorphous materials  
A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel baffler. The amorphous magnetic layer includes Co and...
7253995 Magnetic head and magnetic recording/reproducing device  
A magnetic head includes a first electrode layer, a first ferromagnetic electrode pair that is electrically connected to the first electrode layer, and a second ferromagnetic electrode pair that...
7251110 GMR sensor having layers treated with nitrogen for increased magnetoresistance  
A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate...
7248448 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system  
Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a...
7242067 MRAM sense layer isolation  
A process for forming an MRAM element. The process comprises patterning a globally deposited sense layer and then forming a spacer about the patterned sense layer so as to cover the lateral edges...
7238384 Substrate for perpendicular magnetic recording hard disk medium and method for producing the same  
Proposed are a substrate that comprises an easily producible soft magnetic backing film and can reduce spike noise from the soft magnetic backing film, and a method for producing the substrate....
7218487 Exchange coupling film and magnetoresistive element using the same  
An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is...
7211849 Protective layers for MRAM devices  
A method of forming a magnetic random access memory (MRAM) using a sacrificial cap layer on top of the memory cells and the structure resulting therefrom are described. A plurality of individual...
7209327 Magnetoresistive head having magnetic domain control film in contact with underlayer and with ends of free layer  
A magnetic domain control underlayer is formed below a magnetoresistive multi-layered film thereby bringing the magnetic domain control film into contact with both lateral end faces of a free layer...
7203038 GMR enhancing seedlayer for self pinned spin valves  
A magnetic head includes a seed layer structure comprising Al 2 O 3 , Ta, and NiFeCr seed layers. An antiparallel (AP) pinned layer structure is formed above the NiFeCr seed layer. A free layer is...
7196880 Spin valve sensor having a nonmagnetic enhancement layer adjacent an ultra thin free layer  
A spin valve device includes a non-magnetic enhancement layer adjacent an ultra thin free layer. The thickness of the free layer may be less than the mean free path of a conduction electron through...
7184300 Magneto resistance random access memory element  
A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current...
7163755 Magneto-resistive element  
The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at...
7145755 Spin valve sensor having one of two AP pinned layers made of cobalt  
In one illustrative example of the invention, a spin valve sensor includes a free layer structure; an antiparallel (AP) pinned layer structure; and a non-magnetic electrically conductive spacer...
7142399 Exchange coupling film and magnetoresistive element using the same  
An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is...
7129098 Reduced power magnetoresistive random access memory elements  
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory...
7119998 Exchange coupling film and magnetoresistive element using the same  
An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is...
7116532 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems  
An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide...
7112454 System and method for reducing shorting in memory cells  
An MRAM device includes an array of magnetic memory cells having an upper conductive layer and a lower conductive layer separated by a barrier layer. To reduce the likelihood of electrical shorting...
7106559 Exchange coupling film and magnetoresistive element using the same  
An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is...
7085110 Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive  
The magnetic head of the present invention includes a magnetoresistive read head element in which a magnetic bias layer is deposited across the surface of the wafer above the free magnetic layer....
7085100 Magnetic head having a bilayer pole tip  
A magnetic head having improved overwrite capabilities and reduced fringing fields are described along with methods of making the same. The magnetic head has a first pole piece and a second pole...
7068478 CPP GMR read head  
Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows...
7067331 Method of making amorphous alloys for semiconductor device  
An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at...
7042684 Structure/method to form bottom spin valves for ultra-high density  
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an...
Matches 1 - 50 out of 88 1 2 >