Matches 1 - 17 out of 17
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7432212 Methods of processing a semiconductor substrate  
The invention includes methods of processing semiconductor substrates. In one implementation, a semiconductor substrate is provided which has an outer surface. Such surface has a peripheral region...
7411254 Semiconductor substrate  
The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising...
7384727 Semiconductor processing patterning methods  
The invention includes semiconductor processing patterning methods and semiconductor constructions. A semiconductor processing patterning method includes forming a second composition resist layer...
7368399 Methods of forming patterned photoresist layers over semiconductor substrates  
This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor...
7358188 Method of forming conductive metal silicides by reaction of metal with silicon  
The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising...
7354631 Chemical vapor deposition apparatus and methods  
This invention includes chemical vapor deposition apparatus, methods of chemical vapor depositing an amorphous carbon comprising layer on a substrate, and methods of chemical vapor depositing at...
7291555 Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon  
A method of forming a reaction product includes providing a semiconductor substrate comprising a first material. A second material is formed over the first material. The first and second materials...
7241705 Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects  
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of...
7153769 Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon  
A method of forming a reaction product includes providing a semiconductor substrate comprising a first material. A second material is formed over the first material. The first and second materials...
7119031 Methods of forming patterned photoresist layers over semiconductor substrates  
This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor...
7115532 Methods of forming patterned photoresist layers over semiconductor substrates  
This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is...
7115524 Methods of processing a semiconductor substrate  
The invention includes methods of processing semiconductor substrates. In one implementation, a semiconductor substrate is provided which has an outer surface. Such surface has a peripheral region...
7105431 Masking methods  
The invention includes masking methods. In one implementation, a masking material comprising boron doped amorphous carbon is formed over a feature formed on a semiconductor substrate. The masking...
7026243 Methods of forming conductive material silicides by reaction of metal with silicon  
A method of forming a conductive metal silicide by reaction of metal with silicon is described. A method includes providing a semiconductor substrate with an exposed elemental silicon-containing...
6969677 Methods of forming conductive metal silicides by reaction of metal with silicon  
The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising...
6673689 Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same  
A high surface area capacitor comprising a double metal layer of an electrode metal and a barrier material deposited on hemispherical grain (HSG) silicon and a high dielectric constant (HDC)...
6399459 Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same  
A high surface area capacitor comprising a double metal layer (an electrode metal and barrier material) deposited on hemispherical grain (HSG) silicon, wherein a high dielectric constant (HDC)...
Matches 1 - 17 out of 17