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7446982 Pinning structure with trilayer pinned layer  
A magnetoresistive sensor having a trilayer structure for improved pinning. The pinned layer is exchange coupled with a IrMnCr AFM layer, and has a three ferromagnetic layer, the center one...
7430135 Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density  
Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ...
7400475 Patterned, synthetic longitudinally exchange biased GMR sensor  
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing...
7397638 Magnetoresistive sensor having an in stack bias structure with NiFeCr spacer layer for improved bias layer pinning  
A magnetoresistive sensor having an in stack bias structure for biasing the magnetic moment of the free layer. The in stack bias structure includes a magnetic bias layer that may include a layer of...
7386933 Method of fabricating thin film write heads with a shortened yoke and improved dimension control  
A method for fabricating a magnetic recording head writer. The writer includes a bottom magnetic pole and a write gap formed over the bottom pole and a coil trench formed in the bottom pole. A top...
7385842 Magnetic memory having synthetic antiferromagnetic pinned layer  
A magnetic memory element includes a sense structure, a tunnel barrier adjacent the sense structure, and a synthetic antiferromagnet (SAF) adjacent the tunnel barrier on a side opposite the sense...
7372672 GMR magnetic sensing element having an antiferromagnetic layer extending beyond the track width and method for making the same  
A magnetic sensing element with improved magnetic detection output and a method for making the same are provided. In the magnetic sensing element, the length of an upper pinned magnetic layer an...
7367109 Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment  
A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co—Fe/Ru/Co—Fe, is described. The method determines a thickness of the first pinned layer which...
7365948 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film  
An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the...
7262941 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures  
An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide...
7248445 CPP magnetic sensing element and method for making the same  
A magnetic sensing element includes a composite film, a lower shield layer, and a lower electrode layer and an upper electrode layer for supplying a current perpendicular to the composite film. The...
7234228 Method of fabricating novel seed layers for fabricating spin valve heads  
A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer...
7228619 Method of manufacturing a magnetic head with common seed layer for coil and pedestal  
A method for fabricating a coil and pedestal for a write head using a common seed layer is described. A nonmetallic gap layer is deposited on a planarized pole piece surface. Openings for the pole...
7224601 Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element  
Devices and techniques for applying a resonant action by an applied oscillating magnetic field to a magnetic tunnel junction (MTJ) and an action of an applied DC current across the MTJ to...
7196880 Spin valve sensor having a nonmagnetic enhancement layer adjacent an ultra thin free layer  
A spin valve device includes a non-magnetic enhancement layer adjacent an ultra thin free layer. The thickness of the free layer may be less than the mean free path of a conduction electron through...
7184248 Synthetic pattern exchange configuration for side reading reduction  
A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are...
7154717 Magnetoresistance effect film, magnetoresistance effect head and solid state memory  
The magnetoresistance effect film is capable of performing enough function without employing an antiferromagnetic layer. The film comprises: a seed layer; a first pinned magnetic layer formed on...
7152304 Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor  
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing...
7134186 Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor  
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing...
7123452 Spin-valve GMR with patterned synthetic exchange bias  
A GMR bottom spin valve sensor longitudinally exchange biased with a zero net magnetic moment biasing multi-layer is provided, together with a method of forming said sensor. The sensor may be...
7118680 Self-alignment scheme for enhancement of CPP-GMR  
A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic...
7116531 Lead overlay bottom spin valve with improved side reading  
In bottom spin valves of the lead overlay type the longitudinal bias field that stabilizes the device tends to fall off well before the gap is reached. This problem has been overcome by inserting...
7092222 Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same  
A seed layer having a chromium content in the range of 35 to 60 atomic percent and a thickness of 10 to 200 Å is deposited to have a single phase of the face-centered cubic structure by...
7072209 Magnetic memory having synthetic antiferromagnetic pinned layer  
A magnetic memory element includes a sense structure, a tunnel barrier adjacent the sense structure, and a synthetic antiferromagnet (SAF) adjacent the tunnel barrier on a side opposite the sense...
7050276 GMR magnetic sensing element having an antiferromagnetic layer extending beyond the track width and method for making the same  
A magnetic sensing element with improved magnetic detection output and a method for making the same are provided. In the magnetic sensing element, the length of an upper pinned magnetic layer an...
7050275 Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same  
A seed layer having a chromium content in the range of 35 to 60 atomic percent and a thickness of 10 to 200 Å is deposited to have a single phase of the face-centered cubic structure by...
7016168 Method of increasing CPP GMR in a spin valve structure  
A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral...
7010848 Synthetic pattern exchange configuration for side reading reduction  
A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are...
7006327 Thin film recording head with a buried coil providing a shortened yoke and improved dimension control  
A writer for magnetic recording heads. The writer includes a bottom magnetic pole and a write gap formed over the bottom pole and a coil trench formed in the bottom pole. A top magnetic pole is...
6993827 Method of making a bottom spin valve  
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an...
6961225 Magnetoresistance sensor having an antiferromagnetic pinning layer with both surfaces pinning ferromagnetic bias layers  
A magnetoresistance sensor structure includes a magnetoresistance sensor having a sensor surface plane and having a free layer. An upper antiferromagnetic layer overlies at least a portion of the...
6961224 GMR enhancing seed layer for self pinned spin valves  
A magnetic head includes a seed layer structure comprising Al 2 O 3 , Ta, and NiFeCr seed layers. An antiparallel (AP) pinned layer structure is formed above the NiFeCr seed layer. A free layer is...
6954342 Underlayer for high amplitude spin valve sensors  
A spin valve sensor system and a method for fabricating the same are provided. Such spin valve sensor includes a pinned layer having a pinned layer magnetization. Also included is a free layer...
6909583 FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures  
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is...
6882509 GMR configuration with enhanced spin filtering  
Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of...
6873500 Exchange coupling film capable of improving playback characteristics  
A seed layer is formed containing Cr and an element X (wherein the element X is Fe, Ni, etc.) on a substrate layer formed from Ta, etc. At this time, the compositional ratio of the aforementioned...
EP1513167A2 Magnetoresistance effect film, magnetoresistance effect head and solid state memory  
The magnetoresistance effect film is capable of performing enough function without employing an antiferromagnetic layer. The film comprises: a seed layer; a first pinned magnetic layer formed on...
6865062 Spin valve sensor with exchange biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer  
A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve...
6857180 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor  
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing...
6856493 Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer  
A spin valve sensor has an antiparallel (AP) pinned layer structure which has ferromagnetic first and second AP pinned layers that are separated by an antiparallel coupling layer. The first and...
6833981 Spin valve magnetic head with three underlayers  
A spin valve magnetic head, providing on a substrate, a laminated structure that has an antiferromagnetic layer, fixation layer, non-magnetic layer and unconstraint layer, and having a first...
6807033 Magnetic sensor with reduced wing region magnetic sensitivity  
A magnetic sensor. According to one embodiment, the sensor comprises a synthetic antiferromagnetic (SAF) layer having first and second wing regions and an active region therebetween. The SAF layer...
6785102 Spin valve sensor with dual self-pinned AP pinned layer structures  
A spin valve sensor includes a free layer structure which is located between first and second spacer layers and the first and second spacer layers are located between first and second AP pinned...
6779248 Method of manufacturing a lead overlay bottom spin valve with improved side reading  
In bottom spin valves of the lead overlay type the longitudinal bias field that stabilizes the device tends to fall off well before the gap is reached. This problem has been overcome by providing a...
6775111 Trilayer seed layer structure for spin valve sensor  
A trilayer seed layer structure is employed between a first read gap layer and a spin valve sensor for improving the magnetic and giant magnetoresistive properties and the thermal stability. In the...
6773515 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures  
A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly...
6771472 Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments  
The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a...
6770382 GMR configuration with enhanced spin filtering  
A Spin Valve GMR and Spin Filter SVGMR configuration where in the first embodiment an important buffer layer is composed of an metal oxide having a crystal lattice constant that is close the 1 st ...
6751072 High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure  
A spin valve sensor includes a spacer layer which is located between a free layer and an antiparallel (AP) pinned layer structure wherein the AP pinned layer structure includes an antiparallel...
6741432 Current perpendicular to the planes (CPP) spin valve sensor with in-stack biased free layer and self-pinned antiparallel (AP) pinned layer structure  
A spin valve sensor has an antiparallel (AP) pinned layer structure which has ferromagnetic first and second AP pinned layers that are separated by an antiparallel coupling layer. The first and...
Matches 1 - 50 out of 63 1 2 >