Matches 1 - 21 out of 21
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7440255 Capacitor constructions and methods of forming  
A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC...
7435641 Low leakage MIM capacitor  
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
7378719 Low leakage MIM capacitor  
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
7368343 Low leakage MIM capacitor  
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between...
7288808 Capacitor constructions with enhanced surface area  
A capacitor fabrication method may include forming a first capacitor electrode over a substrate, the first electrode having an inner surface area per unit area and an outer surface area per unit...
7227209 Method of improved high K dielectric—polysilicon interface for CMOS devices  
Methods for forming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide...
7217615 Capacitor fabrication methods including forming a conductive layer  
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
7129128 Method of improved high K dielectric-polysilicon interface for CMOS devices  
Methods for forming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide...
7112503 Enhanced surface area capacitor fabrication methods  
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
7109542 Capacitor constructions having a conductive layer  
A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a...
7105065 Metal layer forming methods and capacitor electrode forming methods  
A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the...
7053432 Enhanced surface area capacitor fabrication methods  
A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode....
6879043 Electrode structure and method for fabricating the same  
The electrode structure of this invention includes a silicon-containing film containing silicon as a principal constituent; a barrier metal layer of titanium nitride rich in titanium as compared...
6861695 High-k dielectric materials and processes for manufacturing them  
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
6787429 High-K dielectric materials and processes for manufacturing them  
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
6777327 Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics  
A rapid thermal process (RTP) provides steps wherein silicon wafers that are pre-coated with barrier metal films by either in-situ or ex-situ CVD or physical vapor deposition (PVD) are pre-treated,...
6762090 Method for fabricating a capacitor  
A method for fabricating capacitor capable of simplifying formation processes of ruthenium (Ru) layer for storage node electrode formation of capacitor comprises the steps of: forming a first...
6699768 Method for forming capacitor of semiconductor device  
Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors having a stacked structure of metal layer-insulating film-metal layer...
6451646 High-k dielectric materials and processes for manufacturing them  
High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and...
6420230 Capacitor fabrication methods and capacitor constructions  
A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode....
6413832 Method for forming inner-cylindrical capacitor without top electrode mask  
A method for forming an inner-cylindrical capacitor without top electrode mask is disclosed. The method includes a step of a trench formed on the substrate. The trench structure with a conductive...
Matches 1 - 21 out of 21