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7368402 |
Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
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7354872 |
Hi-K dielectric layer deposition methods
Methods of forming a high dielectric constant dielectric layer are disclosed including providing a process chamber including a holder for supporting a substrate, introducing a first gas comprising...
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7201943 |
Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material
A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the...
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7030042 |
Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
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7018941 |
Post treatment of low k dielectric films
A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric...
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6919283 |
Fabrication of pure and modified Ta2O5 thin film with enhanced properties for microwave communication, dynamic random access memory and integrated electronic applications
This invention is directed to pure and modified Ta 2 O 5 thin films deposited on suitable substrate and methods for making these Ta 2 O 5 thin films. These Ta 2 O 5 thin films exhibit superior...
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6806183 |
Methods for forming capacitors on semiconductor substrates
Methods and apparatus for plasma annealing layers of a microelectronic capacitor on a substrate are provided to improve the leakage current characteristics of a capacitor and/or to reduce the...
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6784049 |
Method for forming refractory metal oxide layers with tetramethyldisiloxane
A method of forming (and apparatus for forming) refractory metal oxide layers, such as tantalum pentoxide layers, on substrates by using vapor deposition processes with refractory metal precursor...
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6489220 |
Method and a system for sealing an epitaxial silicon layer on a substrate
A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a...
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6232248 |
Single-substrate-heat-processing method for performing reformation and crystallization
An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing...
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