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7291917 |
Integrated circuitry
Methods of forming contact openings, making electrical interconnections, and related integrated circuitry are described. Integrated circuitry formed through one or more of the inventive...
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6855628 |
Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry
Methods of forming contact openings, making electrical interconnections, and related integrated circuitry are described. Integrated circuitry formed through one or more of the inventive...
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6753241 |
Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry
Methods of forming contact openings, making electrical interconnections, and related integrated circuitry are described. Integrated circuitry formed through one or more of the inventive...
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6573186 |
Method for forming plug of semiconductor device
The method of forming a plug of a semiconductor device includes sequentially forming a conductive film and an insulation film over a semiconductor substrate having a high density region and a low...
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6534389 |
Dual level contacts and method for forming
A method for making electrical contacts to device regions in a semiconductor substrate, and the resulting structure, is presented. A first set of borderless contacts is initially formed. This first...
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6522001 |
Local interconnect structures and methods for making the same
The present invention provides methods of forming local interconnect structures for integrated circuits. A representative embodiment includes depositing a silicon source layer over a substrate...
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6483144 |
Semiconductor device having self-aligned contact and landing pad structure and method of forming same
A semiconductor integrated circuit device and method of forming same is disclosed and includes a silicon substrate having a field oxide region and spaced active region. First and second...
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6476490 |
Contact openings, electrical connections and interconnections for integrated circuitry
Methods of forming contact openings, making electrical interconnections, and related integrated circuitry are described. Integrated circuitry formed through one or more of the inventive...
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6468883 |
Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections
Methods of forming contact openings, making electrical interconnections, and related integrated circuitry are described. Integrated circuitry formed through one or more of the inventive...
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6436805 |
Local interconnect structures and methods for making the same
The present invention provides methods of forming local interconnect structures for integrated circuits. A representative embodiment includes depositing a silicon source layer over a substrate...
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6407455 |
Local interconnect using spacer-masked contact etch
A semiconductor device including a structure having an upper surface and an contact surface formed at the upper surface of the structure. An insulating material is formed over the contact surface...
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6277741 |
Method and planarizing polysilicon layer
A method for planarizing a polysilicon layer is described. A polysilicon layer is etched with an oxygen-based gas and a halogen-based gas. The oxygen-based gas comprises an nitrogen oxide oxygen...
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6261935 |
Method of forming contact to polysilicon gate for MOS devices
A new method is provided for the creation of contact pads to the poly gate of MOS devices. STI regions are formed, layers of gate oxide, poly and SiN are deposited. The poly gate is patterned and...
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6033985 |
Contact process interconnect poly-crystal silicon layer in thin film SRAM
A contact process interconnects poly-crystal silicon layer, and more particularly, this process dramatically decreases the voltage drop within a poly-crystal silicon layer. The advantages of the...
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