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7399707 In situ application of etch back for improved deposition into high-aspect-ratio features  
A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma...
7387940 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7371693 Manufacturing method of semiconductor device with chamfering  
Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a...
7368800 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7368366 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7364981 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7361614 Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7358145 Method of fabricating shallow trench isolation structure  
A method of fabricating a shallow trench isolation structure is provided. A substrate is provided with a pad layer, a mask layer and a shallow trench formed therein. A liner oxide layer is formed...
7329586 Gapfill using deposition-etch sequence  
Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are...
7327009 Selective nitride liner formation for shallow trench isolation  
A method for forming a divot free nitride lined shallow trench isolation (STI) feature including providing a substrate including an STI trench extending through an uppermost hardmask layer into a...
7294556 Method of forming trench isolation in the fabrication of integrated circuitry  
This invention includes methods of forming a phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one...
7279397 Shallow trench isolation method  
A method ( 200 ) of forming an isolation structure is presented, in which a hard mask layer ( 304, 308 ) is formed ( 204, 206 ) over the isolation and active regions ( 305, 303 ) of a semiconductor...
7250380 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7250378 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7238588 Silicon buffered shallow trench isolation  
A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The...
7235459 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry  
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated...
7229931 Oxygen plasma treatment for enhanced HDP-CVD gapfill  
Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas...
7217634 Methods of forming integrated circuitry  
The invention includes methods of forming integrated circuitry. In one implementation, a method of forming an integrated circuit includes forming a plurality of isolation trenches within...
7205240 HDP-CVD multistep gapfill process  
A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H 2 ...
7199020 Nitridation of STI liner oxide for modulating inverse width effects in semiconductor devices  
A method ( 1300 ) of forming a semiconductor device comprising an isolation structure is disclosed, and includes forming a trench region within a semiconductor body ( 1308 ). Then, surfaces of the...
7196021 HDP-CVD deposition process for filling high aspect ratio gaps  
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a...
7183227 Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas  
High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such...
7163871 Manufacturing method of semiconductor device and oxidization method of semiconductor substrate  
A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at...
7157385 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry  
This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of...
7132134 Staggered in-situ deposition and etching of a dielectric layer for HDP CVD  
A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate...
7125815 Methods of forming a phosphorous doped silicon dioxide comprising layer  
This invention includes methods of forming phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one...
7105536 Compounds  
The invention relates to novel isoquinolines and their use as anticonvulsants and in the treatment of a variety of disorders.
7097886 Deposition process for high aspect ratio trenches  
A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the...
7087536 Silicon oxide gapfill deposition using liquid precursors  
A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is...
7087497 Low-thermal-budget gapfill process  
A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An...
7081414 Deposition-selective etch-deposition process for dielectric film gapfill  
A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is...
7064077 Method for high aspect ratio HDP CVD gapfill  
A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing...
7060588 Semiconductor device using shallow trench isolation and method of fabricating the same  
A semiconductor device adopting shallow trench isolation for reducing an internal stress of a semiconductor substrate. The semiconductor device is composed of a semiconductor substrate provided...
7053010 Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells  
This invention includes methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming bit line over...
7052552 Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD  
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma...
7049211 In-situ-etch-assisted HDP deposition using SiF4  
A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF 4 , a fluent gas, a silicon source, and an oxidizing...
7045436 Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI)  
A method ( 200 ) of forming an isolation structure is disclosed, and includes forming an isolation trench in a semiconductor body ( 214 ) associated with an isolation region, and filling a bottom...
7045410 Method to design for or modulate the CMOS transistor threshold voltage using shallow trench isolation (STI)  
A method ( 200 ) of forming an isolation structure is disclosed, and includes forming a patterned isolation hard mask layer ( 206, 212 ) having an isolation opening associated therewith over a...
7012010 Methods of forming trench isolation regions  
In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and...
6962857 Shallow trench isolation process using oxide deposition and anneal  
A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in a strained silicon (SMOS) process. The...
6958112 Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation  
Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an...
6929700 Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD  
A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller...
6921709 Front side seal to prevent germanium outgassing  
A method of manufacturing an integrated circuit having a gate structure above a substrate that includes germanium utilizes at least one layer as a seal. The layer advantageously can prevent back...
6914016 HDP-CVD deposition process for filling high aspect ratio gaps  
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a...
6908862 HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features  
A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first...
6903031 In-situ-etch-assisted HDP deposition using SiF4 and hydrogen  
A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF 4 , H 2 , a silicon source, and an oxidizing gas...
6902867 Ink jet printheads and methods therefor  
The invention provides a method for making ink feed vias in semiconductor silicon substrate chips for an ink jet printhead and ink jet printheads containing silicon chips made by the method. The...
6897120 Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrate  
A method of forming integrated circuitry includes forming a silicon nitride comprising layer over a semiconductor substrate. At least a portion of the silicon nitride comprising layer is etched...
6890859 Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby  
A method is described for forming a trench in a semiconductor substrate, which has a silicon layer, an oxide layer overlying the silicon layer, and a nitride layer overlying the oxide layer. The...
6888212 Method for trench isolation by selective deposition of low temperature oxide films  
A method of forming isolation regions in a silicon substrate comprising the steps of forming a trench in the silicon substrate, filling the trench with a silanol polymer material then heating the...
Matches 1 - 50 out of 117 1 2 3 >