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7433237 Memory utilizing oxide nanolaminates  
One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The...
7369435 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7348237 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7257022 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7242049 Memory device  
A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored...
7221586 Memory utilizing oxide nanolaminates  
Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a...
7221017 Memory utilizing oxide-conductor nanolaminates  
Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a...
7196929 Method for operating a memory device having an amorphous silicon carbide gate insulator  
A floating gate transistor has a reduced barrier energy at an interface with an adjacent amorphous silicon carbide (a-SiC) gate insulator, allowing faster charge transfer across the gate insulator...
7193893 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7186664 Methods and structures for metal interconnections in integrated circuits  
A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with metal wires. Making the metal wires flush, or coplanar, with underlying...
7169666 Method of forming a device having a gate with a selected electron affinity  
A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored...
7154778 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7154153 Memory device  
A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored...
7141824 Transistor with variable electron affinity gate  
A SiC material composition is selected to establish the barrier energy between the SIC gate and a gate insulator. Various embodiments of selected SiC material composition include a memory...
7133315 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7130220 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7113429 Nor flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7112494 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7110299 Transistor with nanocrystalline silicon gate structure  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
7109548 Operating a memory device  
A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored...
7005700 Double-gate flash memory device  
The conventional flash memory device is fabricated by the MOS processing technology on a bulk substrate and has a similar configuration to an MOS device. While the conventional CMOS device has a...
7005344 Method of forming a device with a gallium nitride or gallium aluminum nitride gate  
A floating gate transistor has a reduced barrier energy at an interface between a gallium nitride (GaN) or gallium aluminum nitride (GaAlN) floating gate an adjacent gate insulator, allowing faster...
6996009 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
6965123 Transistor with variable electron affinity gate and methods of fabrication and use  
A CMOS-compatible FET has a reduced electron affinity polycrystalline or microcrystalline SiC gate that is electrically isolated (floating) or interconnected. The SiC material composition is...
6949769 Suppression of MOSFET gate leakage current  
A MOSFET has greatly reduced leakage current between the gate electrode and the channel, source and drain regions. The gate electrode materials have lower electron affinities than the channel,...
6936849 Silicon carbide gate transistor  
A field-effect transistor (FET) device and method of fabrication uses an electrically interconnected polycrystalline or microcrystalline silicon carbide (SiC) gate having a lower electron affinity...
6912158 Transistor with nanocrystalline silicon gate structure  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
6888739 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
6879017 Methods and structures for metal interconnections in integrated circuits  
A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with metal wires. Making the metal wires flush, or coplanar, with underlying...
6841445 Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectric  
A non-volatile memory cell of the type which includes at least one floating gate transistor and which is realized over a semiconductor substrate includes a source region, and a drain region,...
6835638 Silicon carbide gate transistor and fabrication process  
A field-effect transistor (FET) device and method of fabrication uses an electrically interconnected polycrystalline or microcrystalline silicon carbide (SiC) gate having a lower electron affinity...
6830953 Suppression of MOSFET gate leakage current  
A method for forming a MOSFET having greatly reduced leakage current between the gate electrode and the channel, source and drain regions. The method requires the use of gate electrode materials...
6804136 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
6794255 Carburized silicon gate insulators for integrated circuits  
Silicon carbide films are grown by carburization of silicon to form insulative films. In one embodiment, the film is used to provide a gate insulator for a field effect transistor. The film is...
6781876 Memory device with gallium nitride or gallium aluminum nitride gate  
A floating gate transistor has a reduced barrier energy at an interface between a gallium nitride (GaN) or gallium aluminum nitride (GaAlN) floating gate an adjacent gate insulator, allowing faster...
6762068 Transistor with variable electron affinity gate and methods of fabrication and use  
A CMOS-compatible FET has a reduced electron affinity polycrystalline or microcrystalline SiC gate that is electrically isolated (floating) or interconnected. The SiC material composition is...
6746893 Transistor with variable electron affinity gate and methods of fabrication and use  
A CMOS-compatible FET has a reduced electron affinity polycrystalline or microcrystalline SiC gate that is electrically isolated (floating) or interconnected. The SiC material composition is...
6740928 Semiconductor device  
The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding...
6731531 Carburized silicon gate insulators for integrated circuits  
Silicon carbide films are grown by carburization of silicon to form insulative films. In one embodiment, the film is used to provide a gate insulator for a field effect transistor. The film is...
6710394 Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectric  
A non-volatile memory cell of the type which includes at least one floating gate transistor and which is realized over a semiconductor substrate includes a source region, and a drain region,...
6574144 Flash memory with nanocrystalline silicon film coating gate  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
6573169 Highly conductive composite polysilicon gate for CMOS integrated circuits  
Many integrated circuits include a type of transistor known as a metal-oxide-semiconductor, field-effect transistor, or “mosfet,” which has an insulated gate member that controls its operation....
6548825 Semiconductor device including barrier layer having dispersed particles  
The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding...
6545314 Memory using insulator traps  
A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as...
6541859 Methods and structures for silver interconnections in integrated circuits  
A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with aluminum wires. Making the aluminum wires flush, or coplanar, with...
6504224 Methods and structures for metal interconnections in integrated circuits  
A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with metal wires. Making the metal wires flush, or coplanar, with underlying...
6492694 Highly conductive composite polysilicon gate for CMOS integrated circuits  
Many integrated circuits include a type of transistor known as a metal-oxide-semiconductor, field-effect transistor, or “mosfet,” which has an insulated gate member that controls its operation....
6453816 Temperature fuse with lower detonation point  
A temperature fuse for gas-generating mixtures consists of substances or mixtures of substances that have lower detonation points or decomposition points than the gas-generating mixture. In...
6424004 Semiconductor device having quantum dots  
A method for forming quantum dots using agglomeration of a conductive layer and a semiconductor device resulting therefrom are disclosed. The method includes the steps of forming a first insulating...
6407424 Flash memory with nanocrystalline silicon film floating gate  
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors...
Matches 1 - 50 out of 76 1 2 >