Matches 1 - 33 out of 33
Match Document Document Title
7433237 Memory utilizing oxide nanolaminates  
One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The...
7429515 Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics  
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Gate oxides formed from...
7369435 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7348237 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7257022 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7221586 Memory utilizing oxide nanolaminates  
Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a...
7193893 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7166509 Write once read only memory with large work function floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7154778 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
7154140 Write once read only memory with large work function floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7133315 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
7130220 Write once read only memory employing floating gates  
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic...
7113429 Nor flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
7112494 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
6996009 NOR flash memory cell with high storage density  
Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The...
6970370 Ferroelectric write once read only memory for archival storage  
Structures and methods for ferroelectric write once read only memory adapted to be programmed for long retention archival storage are provided. The write once read only memory cell includes a...
6952362 Ferroelectric write once read only memory for archival storage  
Structures and methods for ferroelectric write once read only memory adapted to be programmed for long retention archival storage are provided. The write once read only memory cell includes a...
6888739 Nanocrystal write once read only memory for archival storage  
Structures and methods for write once read only memory employing charge trapping are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor...
6804136 Write once read only memory employing charge trapping in insulators  
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect...
6459110 Semiconductor storage element  
A memory cell array, in which a voltage that can reverse polarization is applied only to a memory cell that is an object of data writing. A semiconductor storage element is formed by a...
6337287 High speed, high bandwidth, high density nonvolatile memory system  
A nonvolatile memory system is described. The system includes ferroelectric memory cells each comprising a pair of metal plates and a ferroelectric material therebetween. Data are stored in the...
6242299 Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode  
A continuous barrier layer is formed after a local interconnect metal layer is formed between the top electrode of a ferroelectric capacitor and the source/drain contact of a memory cell transistor...
6233170 Sense amplifier circuit, memory device using the circuit and method for reading the memory device  
The bit lines BL1 and BL2 is precharged to a potential VCC/2, and the plate line PL1 is set to a potential VCC/2. All word lines WL1 and WL2 are set to the high potential so as to sustain the...
6190926 Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion  
A yield enhancement technique for integrated circuit processing which reduces the deleterious effects of H 2 O contamination which is absorbed by conventional dielectric films resulting in an...
6157979 Programmable controlling device with non-volatile ferroelectric state-machines for restarting processor when power is restored with execution states retained in said non-volatile state-machines on power down  
An FeRAM array replaces ROM, PROM, EPROM, and/or EEPROM in a programmable controlling device and thus provides non-volatile memory cells for code stores, data stores, registers (including...
6141238 Dynamic random access memory (DRAM) cells with repressed ferroelectric memory methods of reading same, and apparatuses including same  
A memory cell having first and second operating modes includes a transistor comprising a gate adjacent to a channel region coupling source and drain regions, a digitline coupled to one of the...
6067245 High speed, high bandwidth, high density nonvolatile memory system  
A nonvolatile memory system is described. The system includes ferroelectric memory cells each comprising a pair of metal plates and a ferroelectric material therebetween. Data are stored in the...
6016267 High speed, high bandwidth, high density, nonvolatile memory system  
A nonvolatile memory system is described. The system includes ferroelectric memory cells each comprising a pair of metal plates and a ferroelectric material therebetween. Data are stored in the...
6016266 Semiconductor device with a ferroelectric capacitor  
An object of the present invention is to provide a semiconductor device having a ferroelectric capacitor wherein the ferroelectric capacitor is difficult to get bad electric property. In a...
5990513 Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion  
A yield enhancement technique for integrated circuit processing which reduces the deleterious effects of H 2 O contamination which is absorbed by conventional dielectric films resulting in an...
5815430 Circuit and method for reducing compensation of a ferroelectric capacitor by multiple pulsing of the plate line following a write operation  
A circuit and method for reducing compensation of a ferroelectric capacitor in a cell of a memory array allows the capacitor's hysteresis loop to be repositioned toward its uncompensated position...
EP0760515A2 Method for reading and restoring data in a data storage element  
The data storage element (10) has an FET switch (11) and a ferroelectric capacitor (12) storage device with polarising retention. The switch has a gate (14) for receiving control signals, and a...
5592410 Circuit and method for reducing a compensation of a ferroelectric capacitor by multiple pulsing of the plate line following a write operation  
A circuit and method for reducing compensation of a ferroelectric capacitor in a cell of a memory array allows the capacitor's hysteresis loop to be repositioned toward its uncompensated position...
Matches 1 - 33 out of 33