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7402516 Method for making integrated circuits  
Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or...
7394157 Integrated circuit and seed layers  
Structures are provided which improve performance in integrated circuits. The structures include a diffusion barrier and a seed layer in an integrated circuit both formed using a low energy ion...
7378737 Structures and methods to enhance copper metallization  
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary...
7368378 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals  
Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or...
7301190 Structures and methods to enhance copper metallization  
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary...
7285196 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals  
In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at...
7273821 Method for producing a porous coating  
The present invention relates to a process for producing a porous layer adhering to a substrate, which comprises the steps: a. preparation of a composition comprising an organic polymer...
7268413 Bipolar transistors with low-resistance emitter contacts  
Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high...
7265064 Semiconductor device with porous interlayer insulating film  
In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate then, a porous semiconductor oxide film is formed as...
7262505 Selective electroless-plated copper metallization  
Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including...
7262503 Semiconductor constructions  
The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical...
7262130 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals  
Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or...
7253521 Methods for making integrated-circuit wiring from copper, silver, gold, and other metals  
Integrated circuits include networks of electrical components that are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have begun using copper in...
7220665 H2 plasma treatment  
Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive...
7186664 Methods and structures for metal interconnections in integrated circuits  
A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with metal wires. Making the metal wires flush, or coplanar, with underlying...
7112542 Methods of forming materials between conductive electrical components, and insulating materials  
Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix...
7105914 Integrated circuit and seed layers  
Structures are provided which improve performance in integrated circuits. The structures include a diffusion barrier and a seed layer in an integrated circuit both formed using a low energy ion...
7091611 Multilevel copper interconnects with low-k dielectrics and air gaps  
Structures and methods are provided for an improved multilevel wiring interconnect in an integrated circuit assembly. The present invention provides for a multilayer copper wiring structure by...
7078814 Method of forming a semiconductor device having air gaps and the structure so formed  
A method of forming a semiconductor device, and the device so formed. Depositing alternating layers of a first and a second dielectric material, wherein the first and second dielectric materials...
7071113 Process for removal of photoresist mask used for making vias in low K carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask  
A process for removal of a photoresist mask used to etch openings in low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and for removing etch residues...
7067421 Multilevel copper interconnect with double passivation  
Structures and methods provide multilevel wiring interconnects in an integrated circuit assembly which alleviate problems associated with integrated circuit size and performance and include methods...
7042148 Field emission display having reduced power requirements and method  
A field emission display includes a substrate and a plurality of emitters formed on columns on the substrate. The display also includes a porous dielectric layer formed on the substrate and the...
7015168 Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation  
The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes containing one or more...
6995470 Multilevel copper interconnects with low-k dielectrics and air gaps  
Structures and methods are provided for an improved multilevel wiring interconnect in an integrated circuit assembly. The present invention provides for a multilayer copper wiring structure by...
6984891 Methods for making copper and other metal interconnections in integrated circuits  
A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with aluminum wires. Yet, aluminum wires have greater electrical resistance and...
6953375 Manufacturing method of a field emission display having porous silicon dioxide insulating layer  
A field emission display includes a substrate and a plurality of emitters formed on columns on the substrate. The display also includes a porous dielectric layer formed on the substrate and the...
6933230 Method for making interconnects and diffusion barriers in integrated circuits  
The inventor devised methods of forming interconnects that result in conductive structures with fewer voids and thus reduced electrical resistance. One embodiment of the method starts with an...
6930056 Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure  
A process for forming an integrated circuit structure comprises forming a layer of low k dielectric material over a previously formed integrated circuit structure, and treating the upper surface of...
6902984 Methods of forming void regions, dielectric regions and capacitor constructions  
In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c)...
6893933 Bipolar transistors with low-resistance emitter contacts  
Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high...
6881664 Process for planarizing upper surface of damascene wiring structure for integrated circuit structures  
A three step process for planarizing an integrated circuit structure comprising one or more dielectric layers having trench and/or via openings therein lined with a layer of electrically conductive...
6879017 Methods and structures for metal interconnections in integrated circuits  
A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with metal wires. Making the metal wires flush, or coplanar, with underlying...
6858526 Methods of forming materials between conductive electrical components, and insulating materials  
The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical...
6858195 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material  
The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or...
6849927 Forming submicron integrated-circuit wiring from gold, silver, copper, and other metals  
A typical integrated circuit interconnects millions of microscopic transistors and resistors with aluminum wires buried in silicon-dioxide insulation. Yet, aluminum wires and silicon-dioxide...
6844255 Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry  
The invention comprises methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry. In one...
6835111 Field emission display having porous silicon dioxide layer  
A field emission display includes a substrate and a plurality of emitters formed on columns on the substrate. The display also includes a porous dielectric layer formed on the substrate and the...
6831366 Interconnects containing first and second porous low-k dielectrics separated by a porous buried etch stop layer  
A low-k dielectric metal conductor interconnect structure having no micro-trenches present therein and a method of forming such a structure are provided. Specifically, the above structure is...
6815303 Bipolar transistors with low-resistance emitter contacts  
Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high...
6812163 Semiconductor device with porous interlayer insulating film  
In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. then, a porous semiconductor oxide film is formed as...
6812160 Methods of forming materials between conductive electrical components, and insulating materials  
Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix...
6806551 Fuse construction for integrated circuit structure having low dielectric constant dielectric material  
Fuses, and optionally metal pads, are formed over a layer of low k dielectric material structure having first openings lined with conductive barrier material and filled to form metal interconnects...
6800940 Low k dielectric composite layer for integrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning  
A composite layer of low k silicon oxide dielectric material is formed on an oxide layer of an integrated circuit structure on a semiconductor substrate having closely spaced apart metal lines...
6794754 Semiconductor device with porous interlayer insulating film  
In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. Then, a porous semiconductor oxide film is formed as...
6794261 Methods of forming void regions, dielectric regions and capacitor constructions  
In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c)...
6790784 Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for intergrated circuit structure  
A process for forming an integrated circuit structure comprises forming a layer of low k dielectric material over a previously formed integrated circuit structure, and treating the upper surface of...
6780499 Ordered two-phase dielectric film, and semiconductor device containing the same  
A porous, low-k dielectric film that has good mechanical properties as well as a method of fabricating the film and the use of the film as a dielectric layer between metal wiring features are...
6756674 Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same  
An integrated circuit structure is disclosed wherein the capacitance between nearby conductive portions may be lowered using carbon-containing low k silicon oxide dielectric material, without...
6756298 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals  
In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at...
6743716 Structures and methods to enhance copper metallization  
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary...
Matches 1 - 50 out of 126 1 2 3 >